Film deposition process

Zilko, J. L., Metallo-Organic CVD Technology and Equipment, in Handbook of Thin-Film Deposition Processes and Techniques, (K. K. Shuegraf, ed.), Noyes Publications, Park Ridge, NJ (1988)... 

Interconnect. Three-dimensional structures require interconnections between the various levels. This is achieved by small, high aspect-ratio holes that provide electrical contact. These holes include the contact fills which connect the semiconductor silicon area of the device to the first-level metal, and the via holes which connect the first level metal to the second and subsequent metal levels (see Fig. 13.1). The interconnect presents a major fabrication challenge since these high-aspect holes, which may be as small as 0.25 im across, must be completely filled with a diffusion barrier material (such as CVD titanium nitride) and a conductor metal such as CVD tungsten. The ability to fill the interconnects is a major factor in selecting a thin-film deposition process. 

K. K. Schuegraf, Handbook of Thin-Film Deposition Processes and Techniques, Noyes, Park Ridge, NJ, 1988. 

Particularly desirable among film deposition processes are solution-based techniques, because of the relative simplicity and potential economy of these approaches. However, the covalent character of the metal chalcogenides, which provides the benefit of the desired electronic properties (e.g., high electrical mobility), represents an important barrier for solution processing. Several methods have been developed to overcome the solubility problem, including spray deposition, bath-based techniques, and electrochemical routes, each of which will be discussed in later chapters. In this chapter, a very simple dimensional reduction approach will be considered as a means of achieving a convenient solution-based route to film deposition. 

HANDBOOK OF THIN FILM DEPOSITION PROCESSES AND TECHMQUE edited by Klaus... 

Although the atmospheric pressure Si02 film deposition process was the first CVD process used, it continues in use today because it can be run success-... 

The use of SAW and APM devices for real-time monitoring of film deposition processes is demonstrated by the results shown in Figures 3.22, 3.26, and... 

What follows is a review of the open and patent literature of thin film deposition processes that are related to Combustion Chemical Vapor Deposition (CCVD). This will help to distinguish the novel CCVD process from more... 

We are aware of recent work by others concerning development of flame-based thin film deposition processes. However, our efforts and patents predate all of this work. Some key references ... 

Thin film deposition for producing dense membranes has been presented in Sections 3.1.1 and 3.1.2. The processes can also be used to prepare porous membranes by adjusting the operating conditions. For example, transition metals and their alloys can be deposited on a porous ceramic, glass, or stainless steel support by the thin-film deposition process to produce porous metal membranes with small pore sizes [Teijin, 1984]. 

Unlike other thin film deposition processes, conditions for diamond CVD have three unique features (i) high substrate temperature typically at 700-1200 °C, (ii) high gas pressure P at 20-150Torr (lTorr= 133.3 Pa), and (iii) low methane (CH4) concentration of usually 1-5% with respect to the dilution gas, hydrogen (H2). A standard temperature for diamond growth, monitored by an optical pyrometer without emissivity correction, is 800 °C. It is, however, considered that the surface temperature of the specimen exposed to the plasma is actually higher. Under these conditions, at least more than 95% of the deposited film can be crystalline diamond,... 

M. Konuma, ed. by Y. Pauleau. Feature and Mechanisms of Layer Growth in Liquid Phase Epitaxy of Semiconductor Materials, in Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies (Springer, Berlin, 2002), p. 384... 

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