Film deposition experimental

Fig. 5. Hydrogen depth profile of a deuterated polystyrene PS(D) film deposited on a protonated polystyrene PS(H) film on top of a silicon wafer as obtained by l5N-nuclear reaction analysis ( 5N-NRA). The small hydrogen peak at the surface is due to contamination (probably water) of the surface. The sharp interface between PS(D) and PS(H) is smeared by the experimental resolution (approx. 10 nm at a depth of 80 nm) [57], The solid line is a guide for the eye...

The experimental setup used for the first bipolar or wireless NEMCA study is shown in Figure 12.6.8 An YSZ disc with two terminal Au electrodes and one Pt catalyst film deposited on one side and a reference Au electrode on the other side is placed in a single-chamber reactor. Ethylene oxidation on the Pt catalyst film was chosen as a model reaction.8... 

The experiments were conducted on similar experimental set-up as shown in Fig. 6.1. Substrate 5 had an internal heater - platinum film deposited on the back side of the substrate. The substrate was heated... 

The experimental apparatus has been described in detail elsewhere (11,12,22). In previous communications we have also described the porous silver catalyst film deposition and characterization procedure (11,12). Ten different reactor-cells were used in the present investigation. The cells differed in the silver catalyst surface area as shown in Table I. Catalysts 2 through 5 had been also used in a previous study (17). The reactor-cells also differed in the zirconia electrolyte thickness which could not be measured accurately. The electrolyte thickness varies roughly between 150 and 300 ym. 

A conventional <111> oriented Pb(Zro.45Tio.55)03 (pzt) ferroelectric film, deposited on Pt/Ti02/Si02/Si substrate by sol-gel spin casting and Pt-sputter top electrodes, was used in this study [24], The pzt film thickness was 175 nm. The experimental set-up used for the afm assisted piezoresponse imaging study of the pzt film consisted of a Park Scientific Instrument Autoprobe cp afm combined with a lock-in amplifier to excite and collect the piezoelectric vibration response amplitude and phase. 

Thin semiconductor films (and other nanostructured materials) are widely used in many applications and, especially, in microelectronics. Current technological trends toward ultimate miniaturization of microelectronic devices require films as thin as less than 5 nm, that is, containing only several atomic layers [1]. Experimental deposition methods have been described in detail in recent reviews [2-7]. Common thin-film deposition techniques are subdivided into two main categories physical deposition and chemical deposition. Physical deposition techniques, such as evaporation, molecular beam epitaxy, or sputtering, involve no chemical surface reactions. In chemical deposition techniques, such as chemical vapor deposition (CVD) and its most important version, atomic layer deposition (ALD), chemical precursors are used to obtain chemical substances or their components deposited on the surface. 

The main physicochemical processes in thin-film deposition are chemical reactions in the gas phase and on the film surface and heat-mass transfer processes in the reactor chamber. Laboratory deposition reactors have usually a simple geometry to reduce heat-mass transfer limitations and, hence, to simplify the study of film deposition kinetics and optimize process parameters. In this case, one can use simplified gas-dynamics reactor such as well stirred reactor (WSR), calorimetric bomb reactor (CBR, batch reactor), and plug flow reactor (PFR) models to simulate deposition kinetics and compare theoretical data with experimental results. 

A variation of the experimental methods described above is the xerographic discharge technique which is gaining wide acceptance in the study of polymeric systems. The polymer film deposited on a metallic substrate is corona charged and... 

Fig. 2.29. Experimental data from poly(aniline)/poly(vinylsulfonate) film deposited on a glassy carbon electrode (0.38 cm2, Qi — 150 mC). The response to increasing NADH concentration as shown by the points. The lines represent the uninhibited... 

The main results obtained for the growth kinetics, the adhesion, and the structure and morpholy of aluminum thin films deposited on bi-axially stretched PET films are the following. (l)For a set of experimental conditions (flux, temperature, and polymer surface), the aluminum film is discontinuous up to 10 nm (island formation) and then become continue. The grain size always increases with the thickness of the aluminum Elm as opposeted to the adhesion which remains rather constant. (2)When the aluminum film is continuous and for one thickness of deposition, the adhesion coefficient increases when the grain size decreases. (3)We found an increase of the adhesion coefficient when the skin of the polymer is "semi-crystalline and when the polymer is pretreated with a corona discharge. (4)The best results (for the adhesion of Al/PET) are found for a polymer treated in a fluorine atmosphere and when the deposition of the aluminum on polymer is done by sputtering. 

Figure 4.11 Experimental SAW frequency transients during exposure to methanol iplpo = 0.05) for 360 nm-thick polysiloxane film deposited on bare quartz ( ) and on a 150 nm-thick porous silicate film on the quartz substrate ( ). The larger initial fiequency drop with the porous film is due to permeation of methanol through the polysiloxane film and adsorption onto the surfaces of the underlying porous film. Data points are overlapping at early times. (Reprinted with permission. See Ref. (86).)...

Figure 4. Experimental and calculated dry film thickness of polyimide thin films deposited on silicon wafers.

For CSD processing of ferroelectric thin films, a homogeneous solution of the necessary cation species that may later be applied to a substrate must be prepared. Overall, the basic process involves the steps of solution preparation, film deposition, pyrolysis for removal of organic constituents, and heat treatment to induce crystallization, as shown in Figure 27.2. This section provides some of the experimental details associated with the CSD process, while the next section discusses the process from a more fundamental perspective. 

Investigation of the effect of particulate properties during CMP of W showed a significant increase in the polish rate in the presence of ferric nitrate compared to the polish rate in de-ionized water, at all alumina bulk density values (shown in figure 4). Kaufmann et al. , attributed the increase in the polish rate in the presence of ferric nitrate to the "softness" of the passivating oxide film compared to W. Potentiodynamic experiments and open circuit potential measured as a function of time indicate passivation of W surface. However, the hardness values of tungsten films exposed for 5 min to 0.1 M ferric nitrate, even at the lowest load (300p,N), were the same as those of as-deposited W films within experimental error. Since a 10 nm indentation depth was observed at the lowest load, it is possible that the thickness of the oxide film is smaller and its effect does not manifest itself on the hardness measurement. 

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