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Films tungsten

Fig. 6.17. Cyclic voltammograms of o-phenylenediamine (101 M) oxidation for W03 thermal-treated (350°C) anodic films (b) and smooth platinum electrode (c) first sweep (curves 1) and repeated sweep (curves 2) scan rate was 80 mV/cm2. The left picture shows a schematic representation of the morphology of thermal-treated anodic W03 film tungsten support, highly defective oxide (including the continuous donor clusters), moderately doped oxide (non-shaded region), poly-o-phenylenediamine deposits. Fig. 6.17. Cyclic voltammograms of o-phenylenediamine (101 M) oxidation for W03 thermal-treated (350°C) anodic films (b) and smooth platinum electrode (c) first sweep (curves 1) and repeated sweep (curves 2) scan rate was 80 mV/cm2. The left picture shows a schematic representation of the morphology of thermal-treated anodic W03 film tungsten support, highly defective oxide (including the continuous donor clusters), moderately doped oxide (non-shaded region), poly-o-phenylenediamine deposits.
P. M. S. Monk [1999] Charge Movement through Electrochromic Thin Film Tungsten Trioxide. Crit. Rev. Solid State Mater. Sci. 24, 193—226. [Pg.567]

Figure 10 Temperature Held variation in the oil film, Tungsten carbide rotor and silicon carbide stator. Figure 10 Temperature Held variation in the oil film, Tungsten carbide rotor and silicon carbide stator.
Figure Al.7.10. STM image (1000 A x 1000 A) of the (111) surface of a tungsten single crystal, after it had been coated with a very thin film of palladium and heated to about 800 K (courtesy of Ted Madey). Figure Al.7.10. STM image (1000 A x 1000 A) of the (111) surface of a tungsten single crystal, after it had been coated with a very thin film of palladium and heated to about 800 K (courtesy of Ted Madey).
Fluorination of tungsten and rhenium produces tungsten hexafluoride, WF, and rhenium hexafluoride [10049-17-9J, ReF, respectively. These volatile metal fluorides are used in the chemical vapor deposition industry to produce metal coatings and intricately shaped components (see Thin films,... [Pg.131]

Molybdenum hexafluoride is used in the manufacture of thin films (qv) for large-scale integrated circuits (qv) commonly known as LSIC systems (3,4), in the manufacture of metallised ceramics (see MetaL-MATRIX COMPOSITES) (5), and chemical vapor deposition of molybdenum and molybdenum—tungsten alloys (see Molybdenumand molybdenum alloys) (6,7). The latter process involves the reduction of gaseous metal fluorides by hydrogen at elevated temperatures to produce metals or their alloys such as molybdenum—tungsten, molybdenum—tungsten—rhenium, or molybdenum—rhenium alloys. [Pg.212]

Rhenium hexafluoride is a cosdy (ca 3000/kg) material and is often used as a small percentage composite with tungsten or molybdenum. The addition of rhenium to tungsten metal improves the ductility and high temperature properties of metal films or parts (11). Tungsten—rhenium alloys produced by CVD processes exhibit higher superconducting transition temperatures than those alloys produced by arc-melt processes (12). [Pg.233]

Tungsten disulfide forms adherent, soft, continuous films on a variety of surfaces and exhibits good lubricating properties similar to molybdenum disulfide and graphite (51) (see also Lubrication and lubricants). Itis also reported to be a semiconductor (qv). [Pg.290]

Borides are inert toward nonoxidizing acids however, a few, such as Be2B and MgB2, react with aqueous acids to form boron hydrides. Most borides dissolve in oxidizing acids such as nitric or hot sulfuric acid and they ate also readily attacked by hot alkaline salt melts or fused alkaU peroxides, forming the mote stable borates. In dry air, where a protective oxide film can be preserved, borides ate relatively resistant to oxidation. For example, the borides of vanadium, niobium, tantalum, molybdenum, and tungsten do not oxidize appreciably in air up to temperatures of 1000—1200°C. Zirconium and titanium borides ate fairly resistant up to 1400°C. Engineering and other properties of refractory metal borides have been summarized (1). [Pg.218]

Members of the ion-insertion/extraction group, as inorganic or organic thin films, especially the former, have attracted the widest interest most recently. Tungsten trioxide was the eadiest exploited inorganic compound (4), even before the mechanism of its electrochromic response was understood (5). It is stiU the best known of the important ion-insertion/extraction group. [Pg.156]


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See also in sourсe #XX -- [ Pg.159 , Pg.165 , Pg.178 ]




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Mesoporous tungsten oxide films

Roughness of tungsten films

Selective tungsten thin films

Tungsten electrodes, oxide films

Tungsten film stress

Tungsten film, evaporated

Tungsten thin films

Tungsten trioxide films

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