Melting silicon

Hot melt silicones, 22 35 Hot molding, 12 733 Hot-pressed carbon brick, 12 764 Hot pressing, ceramics processing,... 

Reactive fibers, 9 486-489 Reactive flame retardants, 11 474-479 brominated, ll 475-477t Reactive gases, 13 456 Reactive groups, types of, 9 178 Reactive hot melt butyl sealants, 22 44 Reactive hot melt polyurethanes, 22 37-38 Reactive hot melt silicones, 22 35 Reactive ion-beam etching (RIBE), 22 184 Reactive ion etching (RIE), 20 278 22 183 of lotus effect surfaces, 22 120 Reactive lead alloys, 14 779 Reactive liquid metal infiltration process, 16 168... 

A variety of metallic silicides are obtained by melting silicon with a transition metal. Condensation of a transition-metal vapor with a silicon compound, or silicon vapor with a transition-metal complex has not so far yielded a species with a discrete silicon-transition-metal bond. 

The authors have reported the synthesis and thermoelectric properties of arc-melted silicon borides [14]. As-melted silicon borides in the boron content range of 80 to 94mol% consisted... 

Figure 1. X-ray diffraction pattern of an arc-melted silicon boride (B=90mol%).

Figure 2. Relationship between free silicon content in arc-melted silicon borides and boron content in raw materials.

Figure 3. X-ray diffraction patterns of arc-melted silicon boride (B=90mol%) after heat-treatment. The heat-treatment conditions are (a) 1538K, 5hr (b) 1538K, 40hr (c) 1673K, 0.5hr (d) 1673K, 2hr.

Figure 4. Microstractures of arc-melted silicon boride (B=90mol%). (a) as-melteH (b) after heat-treatment at 1673K for 0.5hr. The A, B and C parts are SiB frpp-s - and SiB4, respectively. ...

Figure 5. Temperature dependence of electrical conductivity of arc-melted silicon borides before and after heat-treatment at 1673K for 0.5hr.

G.J. Galvin, J.W Mayer, PS. Peercy, Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerations. Appl. Phys. Lett. 46,644-646 (1985)... 

The normal spectral emissivity Sn was measured by Lange and Schenck at 650 nm for the first time [39]. Since then, over ten measurements have been reported [40-50], as shown in Fig. 4.12. Shvarev et al. [40] reported that thermal emission from molten silicon can be explained by Drude s free-electron model. Pulse lasers have been used to melt silicon. This method has advantages, in that measurement can be carried out in a very short time and a furnace is not required [42-44]. However, it is difficult to measure the sample temperature accurately as long as laser heating is employed. Recently, measurements using a cold crucible or levitator have been attempted these techniques assure measurement conditions without optical contamination, because there is no crucible wall at high temperature, which causes disturbing emission and reflection [47-50]. 

The pyrohydrolysis of molten or solid NaCl occnrs to some extent, therefore the anthors added Si02 to increase the oxoacidic properties of the solid sample or melt. Silicon dioxide takes part in decomposition of NaOH according to the following reaction ... 

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