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Indium oxide film electronic structures

The devices used for the EL and PL measurements were fabricated in the thin film sandwich configuration anode/polymer/cathode. The electronic structure of alkoxy derivatives of PPV has been studied via internal field emission [42], internal photoemission [76], cyclovoltammetric spectroscopy [159]) and photoelectron spectroscopy [160]. The data indicate that the bottom of the Tr -band and the top of the ir-band are at 3 eV and 5 eV respectively, with respect to the vacuum. Thus, relatively good hole and electron injection can be achieved by using transparent indium/tin-oxide (ITO) as the anode and calcium (Ca) or barium (Ba) as the cathode [42,161]. In practice, however, hole injection is very sensitive to the quality of the ITO. A thin layer (= 300 A) of conducting polymer provides excellent, reproducible hole injecting contacts [70,71,162]. [Pg.138]

Taguchi H., Matsu-ura S., Nagao M., Kido H. Electrical properties of perovskite-type La(Cri, Mn,)03+j. Physica B 1999 270 325-331 Tahar R.B.H., Ban T., Ohya Y., Takahashi Y. Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method. J. Appl. Phys. 1997 82 865-870 Tahar R.B.H., Ban T, Ohya Y., Takahashi Y. Electronic transport in tin-doped indium oxide thin films prepared by sol-gel technique. J. Appl. Phys. 1998 83 2139-2141 Tahar R.B.H., Tahar N.B.H. Mechanism of carrier transport in aluminum-doped zinc oxide. J. Appl. Phys. 2002 92 4498-4501... [Pg.1163]

Grigorovich, S.L. Volkov, AS. Lotsman, A.P. (1981). Study of the structure of anode oxide films based on indium arsenide using the method of Auger electron sp>ectroscopy. Electronic technology. Serial materials. Issue 3 (152), pp. 39-42, ISSN Grunthaner, P.J. Grunthaner F.J., Fathauer R.W., Lin T.L., Hecht MH., Bell L.D., Kaiser... [Pg.322]

Electroluminescence (EL) is the phenomenon by which electrical energy is converted into luminous energy by the recombination of electrons and holes in the emissive material [8], The basic structure of an OLED consists of a thin film of organic material sandwiched between two electrodes, an anode of high-work-function material such as indium tin oxide (ITO) on a glass substrate, and a cathode of a low-work-function metal such as calcium (Ca), magnesium (Mg), or aluminum (Al) or an alloy such as Mg Ag. [Pg.436]

Mardalen, J. et al.. Structure and electronic-properties of polythiophene and poly(3-alkylthiophene) films electropolymerized on indium tin oxide (Ito) glass at elevated potentials, Macwmol. Chem. Phys. 194, 2483-2495, 1993. [Pg.395]

The plasma polymerization of TCl JQ and TCNE was carried out at 13.56 MHz from the gas phase and semiconductive polymeric films were obtained [88, 89]. The electrical conductivities of the films obtained ranged fix m 10 " to 10 S cm and the Al/polymer/ITO (indium tin oxide) sandwich cells made from the films showed rectifying behavior and photovoltaic response. Photoconductivity was also observed in the films. Infrared, ultraviolet, and X-ray photoelectron spectroscopy were utilized to characterize the structure, and these results as well as those from electrical measurements confirmed that a conjugated structure with delocalized 7c-electrons has been formed in the films. [Pg.81]

We have reported the structure analysis of palmitoyl cellulose Langmuir-Blodgett (PC-LB) film by using transmission electron microscope (TEM) [6], scanning probe microscope (SPM) [7] and Fourier transform-infrared spectroscopy [7]. In addition, we have reported the electrical properties of the PC-LB film on the indium tin oxide (ITO) substrate [2]. The average grain size in the PC-LB film was about 200nm. The monolayer thickness was about 22 A. [Pg.256]


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See also in sourсe #XX -- [ Pg.216 , Pg.217 , Pg.218 , Pg.219 ]




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Electron Oxidants

Electronic oxides

Electrons oxidation

Films structuring

Indium electronic structure

Indium oxide

Indium oxide film

Oxidation films

Oxide electronic structures

Oxides, structure

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