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Indium electronic structure

The devices used for the EL and PL measurements were fabricated in the thin film sandwich configuration anode/polymer/cathode. The electronic structure of alkoxy derivatives of PPV has been studied via internal field emission [42], internal photoemission [76], cyclovoltammetric spectroscopy [159]) and photoelectron spectroscopy [160]. The data indicate that the bottom of the Tr -band and the top of the ir-band are at 3 eV and 5 eV respectively, with respect to the vacuum. Thus, relatively good hole and electron injection can be achieved by using transparent indium/tin-oxide (ITO) as the anode and calcium (Ca) or barium (Ba) as the cathode [42,161]. In practice, however, hole injection is very sensitive to the quality of the ITO. A thin layer (= 300 A) of conducting polymer provides excellent, reproducible hole injecting contacts [70,71,162]. [Pg.138]

Hotchkiss PJ, Li H, Paramonov PB, Paniagua SA, Jones SC, Armstrong NR, Bredas JL, Marder SR (2009) Modification of the surface properties of indium tin oxide with benzylphosphonic acids a joint experimental and theoretical study. Adv Mater 21 4496. Li H, Duan YQ, Paramonov P, Coropceanu V, Bredas JL (2009) Electronic structure of self-assembled (fluoro)methylthiol monolayers on the Au( 111) surface impact of fluorination and coverage density. J Electron Spectrosc 174 70... [Pg.38]

J.C. Lemonnier, G. Jezequel, J. Thomas, Optical properties in the far UV and electronic structure of indium films. J. Rhys. C Solid State Rhys. 8, 2812-2818 (1975)... [Pg.155]

The electronic structures of the indium(I) phospholyls ln(r -P3C2Bu 3) and In(ri -P3C2Bu 2) and the half sandwich (riCQHs) have been studied at the BP86... [Pg.10]

Extensive structural, optical, and electronic studies on the chalcopyrite semiconductors have been stimulated by the promising photovoltaic and photoelectrochem-ical properties of the copper-indium diselenide, CuInSe2, having a direct gap of about 1.0 eV, viz. close to optimal for terrestrial photovoltaics, and a high absorption coefficient which exceeds 10 cm . The physical properties of this and the other compounds of the family can be modulated to some extent by a slight deviation from stoichiometry. Thus, both anion and cation deficiencies may be tolerated, inducing, respectively, n- and p-type conductivities a p-type behavior would associate to either selenium excess or copper deficiency. [Pg.43]

KT1 does not have the NaTl structure because the K+ ions are too large to fit into the interstices of the diamond-like Tl- framework. It is a cluster compound K6T16 with distorted octahedral Tig- ions. A Tig- ion could be formulated as an electron precise octahedral cluster, with 24 skeleton electrons and four 2c2e bonds per octahedron vertex. The thallium atoms then would have no lone electron pairs, the outside of the octahedron would have nearly no valence electron density, and there would be no reason for the distortion of the octahedron. Taken as a closo cluster with one lone electron pair per T1 atom, it should have two more electrons. If we assume bonding as in the B6Hg- ion (Fig. 13.11), but occupy the t2g orbitals with only four instead of six electrons, we can understand the observed compression of the octahedra as a Jahn-Teller distortion. Clusters of this kind, that have less electrons than expected according to the Wade rules, are known with gallium, indium and thallium. They are called hypoelectronic clusters their skeleton electron numbers often are 2n or 2n — 4. [Pg.146]


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See also in sourсe #XX -- [ Pg.336 ]




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