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Electrical models components

Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)... Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)...
This equation constitutes the central equation of state-of-the-art modeling of pattern formation in electrochemistry. Its integration requires the knowledge of the electric field component normal to the interface, which is obtained from the solution of Laplace s equation. [Pg.98]

In Table 3, reactor specifications and experimental conditions used and efficiency obtained for the different reactors are compared. A more practical engineering definition for efficiency is used instead of more scientific quantum efficiency. The efficiency of each of the reactors, expressed in terms of 50% pollufanf converted per unit time per unit reactor volume per unit electrical power consumed, is compared for the same model component (Orange II dye) and same initial concentration... [Pg.179]

Thus, forward electromagnetic modeling based on the IE method is reduced to the solution of the matrix equation (9.192) in the unknown vector e > of electric field components inside domain D. The equation is a 37V x 37V linear system,... [Pg.273]

E. However, developing this approach for practically important 3D anisotropic models with arbitrary tensors of electrical conductivity, magnetic and dielectric permeability happens to be very complicated. Yee s algorithm is based on calculation of different electric field components at different space points, but the electrical conductivity tensor relates these components taken at the same point. [Pg.630]

In the full scalar model, the full light intensity inside the resist is calculated, subject to the standard scalar approximation, involving the requirement that the three components of the electric field vector be treated separately as scalar quantities, with each scalar electric field component satisfying the wave equation. In addition, when two fields of light (for example, two plane waves) are added together, the scalar approximation dictates that the sum of the field would simply be the sum of the scalar amplitudes of the two fields. Implicit in the scalar approximation is... [Pg.565]

Either the series impedance electrical model (often with the reactance component X neglected) or the parallel equivalent has been used. Several indexes have been introduced to increase the accuracy. Gender, age, and anthropometric results, such as total body weight and height, are parameters used. An often-used index is where H is the body height and the resistance of a given segment. [Pg.173]

The problem when trying to make an electrical model of the physical or chemical processes in tissue is often that it is not possible to mimic the electrical behavior with ordinary lumped, physically realisable components such as resistors (R), capacitors (C), inductors, semiconductor components, and batteries. Let us mention three examples 1) The constant phase element (CPE), not realizable with a finite number of ideal resistors and capacitors. 2) The double layer in the electrolyte in contact with a metal surface. Such a layer has capacitive properties, but perhaps with a capacitance that is voltage or frequency dependent. 3) Diffusion-controlled processes (see Section 2.4). Distributed components such as a CPE can be considered composed of an infinite number of lumped components, even if the mathematical expression for a CPE is simple. [Pg.329]

In this section, we will use electrical models for human skin as examples in a general discussion on the use of electrical models. An electrical model of the skin with only two components will obviously not be able to simulate the frequency response measured on skin—it is certainly too simple compared with the complex anatomy of human skin. [Pg.329]

The distribution of the electric fields along z-axis in the air-model film-Al system is shown in Fig. 1.16b. The standing-wave patterns produced by the tangential electric field components exhibit nodes at a metal surface, while the normal component has an antinode. As seen from the insert in Fig. 1.16i>, the tangential electric fields, which are continuous at interfaces (1.8.8°), decay dramatically after crossing the metal surface, typically at a distance similar to the depth of the skin layer (1.3.14°). [Pg.53]

Finally, a module simulation including electrical models of the SMDs, embedded components, wiring, and the module interface (e.g., solder bumps) helps to find out possible problems due to parasitic cross-coupling effects [63]. The internal elements can be modified to compensate these effects. It might be even necessary to increase the distance between components or to change their physical dimension. Process or material tolerances are used to assess repeatability and manufacturability (Figure 9.68). [Pg.416]

An example of a real impedance spectrum obtained for a new, fully-charged Graphite-NCA coil element with 10 Ah is shown in Figure 2.22 in accordance with the Nyquist representation. This figure is identical to Figure 2.9 but with the addition of the components of the electrical model. [Pg.59]

A third passive two-terminal electrical component can also be seen in the LAB electrical models the inductor. This component is connected in series to represent the battery behavior in high frequencies in order to fit EIS measurements. One has to keep in mind that such a component does not really describe the battery, but only the cables used to connect it to the load (or the charger). For EIS, the rule of thumb is approximately 10 nH per centimeter of cable. Otherwise, the self-inductance L (in nH) of a straight wire of length I, small diameter d, made of a metal having a relative permeability equal to 1 (like Cu or Al, but not Fe) can be calculated as follows [30] ... [Pg.259]

The component realization shows how a component is realized. The realization of simple components, which can be implemented directly, consists of models that specify the implementation in detail and on a very low level of abstraction, such as state machines or code, if this is appropriate. These are called modules. Complex components cannot be implemented directly, but have to be divided into smaller subcomponents (divide and conquer). The realization of such components shows the subcomponents that are used by the component and how they collaborate with each other. For example. Figure la shows the functional realization of the component SpeedControl (S), which is a component of the traction control system of an electrical model car. From this data flow model it can be seen that SpeedControl consists of two subcomponents LogicalSensor(A) and Controller (B). LogicalSensor requires the wheel revolutions per minute of the car at the functional input A.I1 and the acceleration value of the car measured by an acceleration sensor at A.I2. With these values. [Pg.298]

Quantitative analysis taking sample absorption and thickness into account Recently, the validity of Harrick s weak absorber approximations has been checked by comparison with the general thickness-and absorption-dependent model. It was found that the formalism depicted in the section above may be used for film thicknesses up to 20 nm. Especially if the film is in contact with a third bulk medium, e.g. water, the deviation between accurate and approximate calculation of relative electric field components according to Equation [29] was found to be below 3%, i.e. within the error of most experiments. A comprehensive description of ATR spectroscopy of polymers using the general formalism can be found in the Further reading section. [Pg.70]


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See also in sourсe #XX -- [ Pg.257 , Pg.258 ]




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