Silicon nanowires doped

It is probable that rather than using self-assembly to add any active molecules to the device architecture, the nanowires used to construct the devices will be precoated with active molecules via spin coating as shown by Lieber in his recent work.53 Specially doped silicon nanowires have also shown interesting properties in crossbar-based devices.54... 

Femandez-Serra MV, Adessi C, Blase X (2006) Surface segregation and backscattering in doped silicon nanowires. Phys Rev Lett 96 166805... 

Ge M, Rong J, Fang X, Zhou C (2012) Porous doped silicon nanowires for lithium ion battery anode... 

Ma DDD, Lee CS, Lee ST (2001) Scanning tunneling microscopic study of boron-doped silicon nanowires. Appl Phys Lett 79 2468-2470... 

Tang YH, Sham TK, Jurgensen A, Hu YF, Lee CS, Lee ST (2002) Phosphorus-doped silicon nanowires studied by near edge x-ray absorption fine structure spectroscopy. Appl Phys Lett 80 3709-3711 Teo BK, Sun XH (2007) Silicon-based low-dimensional nanomateiials and nanodevices. Chem Rev 107 1454-1532 Thanh NTK, Green LAW (2010) Fnnctionalisation of nanoparticles for biomedical applications. Nano Today 5 213-230... 

Measurements of mobility in PS suffer from the fact that the number of free charge carriers is usually small and very sensitive to illumination, temperature and PS surface condition. Hall measurements of meso PS formed on a highly doped substrate (1018 cm3, bulk electron mobility 310 cm2 V-1 s-1) indicated an electron mobility of 30 cm2 V 1 s 1 and a free electron density of about 1013 cm-3 [Si2]. Values reported for effective mobility of electron and hole space charges in micro PS are about five orders of magnitude smaller (10-3 to 10 4 cm2 V 1 s ) [PelO]. The latter values are much smaller than expected from theoretical investigations of square silicon nanowires [Sa9]. For in-depth information about carrier mobility in PS see [Si6]. 

Doerk GS, Festari G, Liu F, Carraro C, Maboudian R (2010) Ex situ vapor phase boron doping of silicon nanowires using BBrs. Nanoscale 2 1165-1170... 

Figure 17.6 Numerical calculation of energy band bending across a metal/silicon nanowire Schottky barrier, a system that bears similarity to surface charging due to chemisorption. The calculation is for a nanowire of n-type doping density at lO cm and diameter equal to...

Petretto G, Debemardi A, Fanciulli M (2012) Electronic properties of pristine and Se doped [001] silicon nanowires an ab initio study. J Nanosci Nanotechnol 12 8704-8709 Puzder A, Williamson AJ, Grossman JC, Galli G (2002a) Surface chemistry of silicon nanoclusters. Phys Rev Lett 88(9) 097401... 

Fukami K, Sakka T, Ogata YH, Yamauchi T, TsubokawaN (2009) Multistep filling of porous silicon with conductive polymer by electropolymerization. Physica Status Solidi (a) 206 1259 Gao L, Mbonu N, Cao L, Gao D (2008) Label-lfee colorimetric detection of gelatinases on nanoporous silicon photonic films. Anal Chem 80 1468 Ge M, Rong J, Fang X, Zhou C (2012) Porous doped sdicon nanowires for lithium ion battery anode with long cycle life. Nano Lett 12 2318... 

Cui Y, Duan X, Hu J, Lieber CM (2000) Doping and electrical transport in silicon nanowires. J Phys Chem B 104 5213-5216... 

Zhou GW, Li H, Sun HP, Yu DP, Wang YQ, Huang XJ, Chen LQ, Zhang Z (1999) Controlled Li doping of Si nanowires by electrochemical insertion method. Appl Phys Lett 75 2447-2449 Zhou XT, Hu JQ, Li CP, Ma DDD, Lee CS, Lee ST (2003) Silicon nanowires as chemical sensors. Chem Phys Lett 369 220-224... 

Cho YJ et al (2011) Nitrogen-doped graphitic layers deposited on silicon nanowires for efficient lithium-ion battery anodes. J Phys Chem C 115 9451-9457... 

This chapter summarizes the main theoretical approaches to model the porous silicon electronic band structure, comparing effective mass theory, semiempirical, and first-principles methods. In order to model its complex porous morphology, supercell, nanowire, and nanocrystal approaches are widely used. In particular, calculations of strain, doping, and surface chemistry effects on the band structure are discussed. Finally, the combined use of ab initio and tight-binding approaches to predict the band structure and properties of electronic devices based on porous silicon is put forward. 

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