Electronic Properties Doped Silicon and Germanium as Examples

The importance of point defects in a crystal cannot be overstated. They can change the physical properties of a solid significantly. To introduce the range of changes possible, Sections 1.3-1.6 outline some of the physical properties that are influenced in this way. 

3 ELECTRONIC PROPERTIES DOPED SILICON AND GERMANIUM AS EXAMPLES 

The unique electronic properties of semiconductor devices arise at the regions where p-typc and ra-typc materials ate in close proximity, as in p-n junctions. Typical impurity levels ate about 0.0001 at %, and their inclusion and distribution need to be very strictly controlled during preparation. Without these deliberately introduced point defects, semiconductor devices of the type now commonly available would not be possible. 

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