Annealing rapid thermal

Tantalum Nitride as Diffusion Barrier. Tantalum nitride (TaN) produced by MOCVD has excellent potential as a barrier material, comparable to TiN. The resistivity of TaN thin films can be lowered by rapid thermal annealing in nitrogen. 

Retention in dibenzenechromium was studied by Baumgartner, Zahn and Seeholzer who found 11.8% retention in samples processed by dissolution and then sublimation, and 19.4% in samples sublimed directly. The difference was interpreted as resulting from a rapid thermal annealing during the sublimation. 

In related experiments by Johnson (1985), atomic deuterium was used instead of Hx to neutralize boron in Si. Similar results on spreading resistance were obtained. Furthermore, the distribution profile of D was measured by secondary-ion mass spectrometry (SIMS), as shown in Fig. 4. The distribution profile of D reveals 1) that the penetration depth of D is in good agreement with the resistivity profile and 2) that the D concentration matches the B concentration over most of the compensated region. In another sample, the B was implanted at 200 keV with a dose of 1 x 1014 cm-2, the damage was removed by rapid thermal anneal at 1100°C for 10 sec., and then D was introduced at 150°C for 30 min. As shown in Fig. 5, it is remarkable that the D profile conforms to the B profile. 

Reaney, I. M. Brooks, K. Klissurka, R. Pawlaczyk, C. Setter, N. 1994. Use of transmission electron microscopy for the characterization of rapid thermally annealed solution-gel, lead zirconate titanate films. /. Am. Ceram. Soc. 77 1209-1216. 

The solution-processed doped silicon films described above (baked at 500 °C for 2 hr) exhibited high electrical resistivity (greater than 300 Qcm), which is the measurement limit of the instrument we used. To lower the resistivity, we tried an additional rapid thermal annealing (RTA) of the film prepared from the copolymerized solution with 1 wt% phosphorus concentration. In this RTA, the SiC plate on which the sample was placed was irradiated with infrared (IR) light from a 1-kW IR lamp. The RTA conditions were 600 °C for 2 hr, 650 °C for 20 min, 700 °C for 5 min, and 750 °C for 5 min these temperatures were that of the SiC plate, and the temperature of the Si film is estimated to be several dozens of degrees lower than that. 

Rapid stopping piston, 73 420 Rapid thermal annealing (RTA), in ion implantation, 22 187... 

Figure 3 (a) Schematic of the lithography sequence on neodecanoate films (b) Patterned lines after rapid thermal annealing (c) Resulting film properties. After Mantese et al. (4i) and Hamdi et at. (39X40). 

High-dose B implants with all-temperature furnace annealing and rapid thermal annealing (RTA). Local diffusivity depends on extended defect formation and annihilation. Also, B clustering occurs above solid solubility. 

Transient Diffusion During Rapid Thermal Annealing. When the B implant dose is less than 3 X 1014/cm2 and an RTA is performed, transient diffusion is observed (66). Examples are shown in Figure 27 for implants of 1 X 1014-2 X 1014 B atoms per cm2 performed at energies from 1 to 60 keV. The previously published data of Sedgwick (66) are included. This case is modeled similarly as the low-dose B implant-furnace anneal case, except for the magnitude of Denh. Thus, if neutral and donor point defects contribute to B diffusivities D and Df-+, respectively, then the total B diffusion coefficient (Db) is given by (59)... 

Solutions prepared by any of the above-described techniques are spun onto the rotating substrate and dried at the temperature ranging from 150 to 450°C. Spin coating and drying are usually repeated several times. The coated films are finally annealed at 650°C for crystallization. Rapid thermal annealing (RTA) is frequently used for crystallization, demonstrating a positive impact on per-ovskite phase crystallization. It was also demonstrated by numerous workers that excess of lead (about 10% over stoichiometry) has to be introduced to compensate for the partial evaporation of volatile PbO during thermal treatment. This also allows the formation ofpyrochlore admixtures, which represents the major obstacle in the course of PZT films crystallization, to be overcome. 

The same effect is seen when the polycide structure of Figure 4 is annealed. In Figure 6 we see the effect of furnace annealing Figure 7 shows similar effects for rapid thermal annealing. 

Ca has been demonstrated to act as a p-type dopant when ion-implanted into GaN, followed by rapid thermal annealing at 1150°C [43], The maximum Ca concentration and free hole density were 4.5 x 1019 cm 3 and 6.2 x 1016 cm 3 and the activation energy was EA = 169 meV, suggesting an optical value similar to that of Mg. 

Using ion implantation in GaN, Zolper et al reported n-type doping with oxygen and obtained a relatively shallow donor level at 29 meV [4], SIMS measurements did not show any measurable redistribution with rapid thermal annealing (RTA) at 1125°C. However, the activation efficiency of the implanted dopants was very poor. 

In addition to the more commonly employed two-step thermal treatment procedure discussed above, a number of investigators have also used a single-step process. This method has generally received more attention for BT- and ST-based materials, while the two-step approach has been more widely applied to lead-based compositions. In the single-step process, the deposited film may be directly inserted into a furnace already at the crystallization temperature, or rapid thermal annealing (RTA) can be used (with or without a separate pyrolysis... 

In Ref. [421], an HOD film of about 6-pm thickness were deposited on p-type Si by the two-step process using a custom-made CVD reactor under the conditions given in Table H.4. Then, B ions were implanted at —76°C, which was followed by a rapid thermal annealing. The B concentration was 10 /cm, the hole mobility was 80cm /V s, and the hole concentration was lO /cm at 20°C. The gauge factor K was as high as 1200 at lOOp strain at room temperature, which is far superior to 6 for polycrystalline diamond films and 550 for homoepitaxial film. 

Fig. 20 SXPS spectra Hf02 deposited onto Ge(lll) as-deposited at 300 °C and after an 800 °C 1 min rapid thermal anneal in Ar...

Ni implantation results in the formation a Ni silicide layer on the implanted SiNW surface. The layer contains lots of defects. Rapid thermal annealing (RTA) at 500 °C smoothed the surface of the Ni-implanted SiNWs, which was transformed to a continuous outer layer with a typical thickness of about 8 nm, as shown in Figure 10.16. 

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