Dielectric material-gate field effect

Dielectric material-gate field effect transistor... 

The other interesting material for electronics is carbon nanotubes. We have shown the application of individual single-walled carbon nanotubes for field effect transistors (FETs) [3]. Carbon nanotubes (CNT) or CNT bundles can be placed between two carbon electrodes playing the role of source and drain. The gate electrode can be made of thin metal stripe under the dielectric film in the region between source and drain. 

As already mentioned, one possible way to eliminate the fundamental limitations of current field effect transistors would be to substitute the sihca by other high dielectric function oxides as gate materials. Unfortunately, the growth of high-quality oxide films on siUcon substrates is not a simple task, and much work is being devoted to develop appropriate methods. For example, it has been shown that the formation of thin films of alkaline-earth-met-... 

A polymer sensor is a particular type of transistor where a sensor material is in contact with the dielectric gate, the dielectric layer or the semiconductive layer. The sensor responds to the presence of an analyte by selectively adsorbing it and then inducing a change in the channel conductivity through an electrostatic field effect (34). 

The metal oxide-semiconductor field effect transistor (MOSFET) is the most important component in modem electronics, at least from the perspective of sheer numbers. A typical computer chip contains vast numbers of MOS-FETs. The basic architecture is illustrated in Eigure 1. The semiconductor is connected to a substrate on one side and to a gate contact on the other, which is separated from the semiconductor by a dielectric film. The region of semiconductor directly beneath the gate connects two contacts, the source and the drain. If the semiconductor is p-type Si, then source and drain contacts may be formed by implantation of electron-rich elements to yield shallow regions composed of n-type material. As the potential difference between the gate and the substrate is increased, the channel between the... 

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