Detectors, infrared telluride

The infrared-electrochemical cell, originally designed by Bewick and his coworkers, was partly modified to introduce an electrode from the upper part of the cell. The front side of the cell is attached with a CaFg optical window, and the backside with a glass syringe which pushes the electrode against the window. The Fourier transform infrared measurements were conducted at 0 °C for Cu electrodes and at ambient temperature for Ni and Fe electrodes by JIR-6000 (Nihon Densi, Co. Ltd.) externally equipped with an MCT (mercury-cadmium-telluride) detector. Infrared spectra were acquired by the subtraction of two spectra reflected from the electrode at different potentials (SNIFTIRS). The other details were described previously. [9]... 

W.F.H. Micklethwaite, The Crystal Growth of Cadmium Mercury Telluride Paul E. Petersen, Auger Recombination in Mercury Cadmium Telluride R.M. Broudy and V.J. Mazurczyck, (HgCd)Te Photoconductive Detectors M.B. Reine, A.K. Sood, and T.J. Tredwell, Photovoltaic Infrared Detectors M.A. Kinch, Metal-Insulator-Semiconductor Infrared Detectors... 

Electronic and Optoelectronic Applications of Tellurides. Most metal tellurides are semiconductors with a large range of energy gaps and can be used in a variety of electrical and optoelectronic devices. Alloys of the form HgCdTe and PbSnTe have been used as infrared detectors and CdTe has been employed as a gamma, ray detector and is also a promising candidate material for a thin-film solar cell. 

Mercury-cadmium-telluride is the principal semiconductor now being used in advanced infrared systems, both for military and other surveillance applications. Its preparation and use in infrared detectors and arrays was the subject of Volume 18 of this treatise. New generations of detectors and arrays require sophisticated epitaxial growth, which in turn requires precise phase diagram data. 

A photoconductive detector is a semiconductor whose conductivity increases when infrared radiation excites electrons from the valence band to the conduction band. Photovoltaic detectors contain pn junctions, across which an electric field exists. Absorption of infrared radiation creates electrons and holes, which are attracted to opposite sides of the junction and which change the voltage across the junction. Mercury cadmium telluride (Hg,. Cd/Te, 0 < x < 1) is a detector material whose sensitivity to different wavelengths is affected by the stoichiome-try coefficient, x. Photoconductive and photovoltaic devices can be cooled to 77 K (liquid nitrogen temperature) to reduce thermal electric noise by more than an order of magnitude. 

The infrared spectra were recorded by an evacuable FT-IR spectrometer, Broker IFS-113v, equipped with a liquid nitrogen cooled MCT (mercury cadmium telluride) detector. All infrared spectra showed were obtained by substraction of the background (oxide) spectrum, recorded at the same temperature. 

Marcott, C., Reeder, R. C., Paschalis, E. P., Talakis, D. N., Boskey, A. L. and Mendelsohn, R. (1998) Infrared microspectroscopic imaging of biomineralized tissues using a mercury-cadmium-telluride focal-plane array detector. Cell. Mol. Biol. 44, 109-115. 

Marcott, Curtis and Reeder, C. Robert (1998) Industrial applications of FUR microspectro-scopic imaging using a mercury-cadmium-telluride focal-plane array detector. Proceedings of the SPIE - Infrared Technology and Applications XXIV, Vol. 3436, 285-9. 

All infrared spectra were recorded with an IR-PLAN microscope (IR-PLAN is a registered trade mark of Spectra Tech, Inc.) integrated to a Perkin-Elmer Model 1800 Fourier transform infrared (FT-IR) spectrophotometer. The spectrophotometer consisted of a proprietary heated wire source operated at 1050°C, a germanium overcoated potassium bromide beamsplitter, and a narrow-band mercury-cadmium-telluride (HgCdTe) detector. The detector was dedicated to the microscope and had an active area of 250 x 250 pm. The entire optical path of the system microscope was purged with dry nitrogen. 

Spectra were measured at 4 cm"1 resolution with a Nicolet 740 Fourier transform infrared (FT-IR) spectrometer equipped with a medium range mercury-cadmium-telluride detector. A series of 128 scan spectra (43 sec measurement time) was collected every 5 min for the first hour and then every 10 min for 3 hr. At the end of the 4 hr period, saline or Milli-Q water of the same pH was substituted for the polymer solution and the data acquistion program was restarted. 

All of the infrared experiments were performed on a Digilab FTS-40 Fourier transform infrared (FT-IR) spectrometer equipped with a narrow-band liquid-nitrogen-cooled mercury-cadmium-telluride (MCT) detector. The spectrometer was operated at a nominal resolution of 4 cm-1 using a mirror velocity of 1.28 cm/s. The data collected using the gas chromatography (GC) IR software were measured at 8 cm-1 resolution. Protein assays for all the experiments were measured on a Beckman DU-70 UV-visible spectrophotometer. 

The invention of US-A-3902924 is concerned with low temperature growth of mercury cadmium telluride layers on insulating substrates by liquid phase epitaxy. Infrared detectors are fabricated to assist with the evaluation of the grown layers. 

An imager having an element packing density of 90% is disclosed in US-A-4104674. Infrared photovoltaic detectors of mercury cadmium telluride are mounted on a silicon substrate. Electrical contacts are made by thin-film metallizations. 

A problem with the monolithic arrays is that the techniques for building metal-oxide-semiconductor (MOS) devices in silicon cannot be transferred intact to narrow bandgap materials such as mercury cadmium telluride, mainly due to tunneling and avalanche breakdown occuring at very low voltages. A monolithic array, in which read-out electronics is integrated in the same mercury cadmium telluride chip as the infrared detectors, is therefore difficult to achieve. 

Pyroelectric infrared detectors are inferior in detectivity by one or two orders of magnitude compared with photoconductors such as cadmium mercury telluride, as shown in Fig. 7.15. However, such materials require temperatures of 200 K for efficient operation and generally respond to rather narrow bands at the infrared wavelengths. Pyroelectric devices can discriminate temperature differences of 0.1 K but find many useful applications in which the discrimination is limited to about 0.5 K. They have the great practical advantage of operating at normal ambient temperatures. 

Cadmium telluride — A II—IV compound -> semiconductor frequently employed in infrared systems (active component in infrared detectors) and -> photovoltaic devices. Electrochemical - passivation has been employed to improve surface recombination behavior. 

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