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Depth profiling imaging

Application Depth profiling, imaging, trace and isotope analysis, micro-and nano-analytics Depth profiling, imaging... [Pg.167]

ToF-SIMS is the most versatile of the surface analysis techniques that have been developed over the last 30 years. Analyses possible by SIMS include bulk elemental analysis in small volumes of material, in-depth analyses (depth profiles), imaging, analysis at interfaces, isotopic analysis and elemental and molecular surface analysis. [Pg.429]

Destructive Chemical bonding Depth profiling Quantification Accuracy Detection limits Sampling depth Lateral resolution Imaging/mapping... [Pg.15]

Information Element range Destructive Lateral resolution Depth profiling Depth probed Detection limits Quantitative Imaging... [Pg.33]

Lateral resolution Depth profiling Depth resolution Maximum depth Imaging/mapping... [Pg.36]

Depth profiling Lateral resolution Imaging/ mapping... [Pg.40]

Static SIMS is labeled a trace analytical technique because of the very small volume of material (top monolayer) on which the analysis is performed. Static SIMS can also be used to perform chemical mapping by measuring characteristic molecules and fiagment ions in imaging mode. Unlike dynamic SIMS, static SIMS is not used to depth profile or to measure elemental impurities at trace levels. [Pg.528]

The imaging mode is used to determine the lateral distribution (xand ) of specific preselected elements. In certain circumstances, an imaging depth profile is acquired, combining the use of both depth profiling and imagii. ... [Pg.537]

By acquiring mass-resolved images as a function of sputtering time, an imaging depth profile is obtained. This combined mode of operation provides simultaneous lateral and depth resolution to provide what is known as three-dimensional analysis. [Pg.541]

Today dynamic SIMS is a standard technique for measurement of trace elements in semiconductors, high performance materials, coatings, and minerals. The main advantages of the method are excellent sensitivity (detection limit below 1 pmol mol ) for all elements, the isotopic sensitivity, the inherent possibility of measuring depth profiles, and the capability of fast direct imaging and 3D species distribution. [Pg.106]

SIMS has superb surface sensitivity since most of the secondary ions originate within a few nanometers of the surface and since high detection efficiency enables as little as 10 " of a monolayer to be detected for most elements. Because of its very high surface sensitivity, SIMS can be used to obtain depth profiles with exceptionally high depth resolution (<5 nm). Since the beam of primary ions can be focused to a small spot, SIMS can be used to characterize the surface of a sample with lateral resolution that is on the order of micrometers. Elements with low atomic numbers, such as H and He, can be detected, isotope analysis can be conducted, and images showing the distribution of chemical species across... [Pg.295]

Applications Table 8.58 shows the main fields of application of inorganic mass spectrometry. Mass-spectrometric techniques find wide application in inorganic analysis, and are being used for the determination of elemental concentrations and of isotopic abundances for speciation and surface characterisation for imaging and depth profiling. Solid-state mass spectrometry is usable as a quantitative method only after calibration by standard samples. [Pg.650]

SIMS Up to 10 pm by dynamic SIMS 2-5 nm possible 10-20 nm typical Yes by dynamic SIMS Yes Yes Yes, by imaging SIMS 1 pm imaging 30 pm depth profiling... [Pg.207]

DESI has also been introduced into MS imaging. [39] SIMS is also used for surface imaging and depth profiling. [40]... [Pg.72]

Imaging chemiluminescence technique. Chemiluminescence analysis is suitable for studying the early stages of the thermal oxidation of rubbers. A weak emission of light formed by chemical reactions appears during the oxidative degradation of hydrocarbons. This technique can be used to depth profile the oxidation of rubbers. MR... [Pg.34]

FNA systems only produce a 2D view with no depth profile. The systems usually have large a pixel size and subsequently a poor image. The pixel size is related to the size of the coUimated incident neutron beam and the spread of the neutron beam while traversing the thickness of the container. [Pg.75]

Photoacoustic imaging method is useful for the analysis of localization of various components in two-dimension and photoacoustic method has one more advantage that it can be applied to the non-destructive depth-profiling. Thus, in future, 3-dimensional analysis should be possible by this method. For the development of this possibility, the model experiments were performed. [Pg.155]

Fig. 11 Atomic force microscopy of a a 30-nm-thick grafted PS film, b depth profile along indicated line, and c 3D image [114]... Fig. 11 Atomic force microscopy of a a 30-nm-thick grafted PS film, b depth profile along indicated line, and c 3D image [114]...

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See also in sourсe #XX -- [ Pg.90 , Pg.200 , Pg.465 , Pg.492 , Pg.795 , Pg.797 ]




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Depth profiles

Image depth profiling , SIMS

Imaging depth

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