Depth elemental

Fig. 9.3 In-depth elemental composition of the sNPS layer (the speed of the etching - 3 nm/min)...

The average concentrations of reduced inorganic sulfur species in the anoxic zone of the Black Sea measured using a new colorimetric method developed by Volkov [61,62] are summarized in Table 3. Presented elemental sulfur data refer to the stun of elemental sulfur allotropes (zero-valent sulfur) and the zero-valent sulfur derived from some fraction (n - 1) of the original polysulfide S 2. Thiosulfate data in the table represent the total amount of thiosulfate, sulfite, and polythionates. At some stations in the Black Sea, Volkov [61] observed a concentration maximum of elemental sulfur at the oxic/anoxic interface associated with sulfide oxidation by dissolved oxygen and/or Mn oxyhydroxides. Increasing with depth, elemental sulfur concentrations are probably explained by the ongoing process of polysulfide formation... 

Sulfur isotopes are more fruitful in resolving the relative contributions of reduction or oxidation processes. For example, in the Peace River area of Alberta, Canada, sulfur and sulfate are deposited on the tops of peat occurrences. At depths of 80 cm and lower, pyrites are found with 6 S values typically around —24%o. Above 80 cm depth, elemental sulfur begins to dominate and has values in the range —28 to —30%o. The sulfate deposits very close to the smrface have values near —33%o. The isotopic data are consistent with the preferential reaction of S during sulfide oxidation. This, coupled with the occurrence of the more oxidised species near the surface, leads to the conclusion that the elemental sulfur originated from deeper sulfide sources (Krouse, 1979). 

Quantitative information regarding the surface ( 1 nm depth) elemental distribution and concentration can be obtained by analysing the energies of the Auger electrons emitted, which are also characteristic of the elements involved. This is known as scaiming Auger microscopy or SAM. The instramentation involved in... 

SAM quantitative analysis of surface ( 1 nm depth) elemental composition and distribution at particular points of interest in the secondary or back-scattered images as well as magnified elemental contrast images. 

This paper compares experimental data for aluminium and steel specimens with two methods of solving the forward problem in the thin-skin regime. The first approach is a 3D Finite Element / Boundary Integral Element method (TRIFOU) developed by EDF/RD Division (France). The second approach is specialised for the treatment of surface cracks in the thin-skin regime developed by the University of Surrey (England). In the thin-skin regime, the electromagnetic skin-depth is small compared with the depth of the crack. Such conditions are common in tests on steels and sometimes on aluminium. 

The first example refers to the detection of a 1mm side drilled hole at a depth of 45 mm in a polyethylene plastic material. Due to the high sound absorption in plastics, a low operating frequency is chosen. A probe having a 1 MHz element of 24 mm diameter was selected for this example. The echo pattern of a conventional probe with a PZT transducer is pre-... 

The ultrasonic tomograph A1230 was developed to visualize in case of one side access the internal reinforced concrete structure at the depth of 1 m. This device uses 36-elements matrix array. 

A microbe employs a focused beams of energetic ions, to provide infomiation on the spatial distribution of elements at concentration levels that range from major elements to a few parts per million [27]. The range of teclmiques available that allowed depth infomiation plus elemental composition to be obtained could all be used in exactly the same way it simply became possible to obtain lateral infomiation simultaneously. 

Forward recoil spectrometry (FRS) [33], also known as elastic recoil detection analysis (ERDA), is fiindamentally the same as RBS with the incident ion hitting the nucleus of one of the atoms in the sample in an elastic collision. In this case, however, the recoiling nucleus is detected, not the scattered incident ion. RBS and FRS are near-perfect complementary teclmiques, with RBS sensitive to high-Z elements, especially in the presence of low-Z elements. In contrast, FRS is sensitive to light elements and is used routinely in the detection of Ft at sensitivities not attainable with other techniques [M]- As the teclmique is also based on an incoming ion that is slowed down on its inward path and an outgoing nucleus that is slowed down in a similar fashion, depth infonuation is obtained for the elements detected. 

AES Auger electron spectroscopy After the ejection of an electron by absorption of a photon, an atom stays behind as an unstable Ion, which relaxes by filling the hole with an electron from a higher shell. The energy released by this transition Is taken up by another electron, the Auger electron, which leaves the sample with an element-specific kinetic energy. Surface composition, depth profiles... 

As in Auger spectroscopy, SIMS can be used to make concentration depth profiles and, by rastering the ion beam over the surface, to make chemical maps of certain elements. More recently, SIMS has become very popular in the characterization of polymer surfaces [14,15 and 16]. 

Electron Microprobe A.na.Iysis, Electron microprobe analysis (ema) is a technique based on x-ray fluorescence from atoms in the near-surface region of a material stimulated by a focused beam of high energy electrons (7—9,30). Essentially, this method is based on electron-induced x-ray emission as opposed to x-ray-induced x-ray emission, which forms the basis of conventional x-ray fluorescence (xrf) spectroscopy (31). The microprobe form of this x-ray fluorescence spectroscopy was first developed by Castaing in 1951 (32), and today is a mature technique. Primary beam electrons with energies of 10—30 keV are used and sample the material to a depth on the order of 1 pm. X-rays from all elements with the exception of H, He, and Li can be detected. 

Diffusivities of various elements ate determined experimentally. Dopant profiles can be determined. The junction depth can be measured by chemically staining an angle-lapped sample with an HE/HNO mixture. The -type region of the junction stains darker than the n-ty e region. The sheet resistivity can also be measured using a four-point probe measurement. These two techniques ate used for process monitoring. 

The physical techniques used in IC analysis all employ some type of primary analytical beam to irradiate a substrate and interact with the substrate s physical or chemical properties, producing a secondary effect that is measured and interpreted. The three most commonly used analytical beams are electron, ion, and photon x-ray beams. Each combination of primary irradiation and secondary effect defines a specific analytical technique. The IC substrate properties that are most frequendy analyzed include size, elemental and compositional identification, topology, morphology, lateral and depth resolution of surface features or implantation profiles, and film thickness and conformance. A summary of commonly used analytical techniques for VLSI technology can be found in Table 3. 

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