CVD deposition

In practical applications, gas-surface etching reactions are carried out in plasma reactors over the approximate pressure range 10 -1 Torr, and deposition reactions are carried out by molecular beam epitaxy (MBE) in ultrahigh vacuum (UHV below 10 Torr) or by chemical vapour deposition (CVD) in the approximate range 10 -10 Torr. These applied processes can be quite complex, and key individual reaction rate constants are needed as input for modelling and simulation studies—and ultimately for optimization—of the overall processes. 

Si02, BaTiO capacitors sol—gel, sputtering, chemical vapor deposition (CVD)... 

Rhenium hexafluoride is used for the deposition of rhenium metal films for electronic, semiconductor, laser parts (6—8), and in chemical vapor deposition (CVD) processes which involve the reduction of ReF by hydrogen at elevated (550—750°C) temperatures and reduced (<101.3 kPa (1 atm)) pressures (9,10). 

Chemical Vapor Deposition. In chemical vapor deposition (CVD), often referred to as vapor transport, the desired constituent(s) to be deposited are ia the form of a compound existing as a vapor at an appropriate temperature. This vapor decomposes with or without a reducing or oxidizing agent at the substrate— vapor interface for film growth. CVD has been used successfully for preparing garnet and ortho ferrite films (24,25). Laser-assisted CVD is also practiced. 

Fabrication methods that are generaby used to make these junctions are diffusion, ion implantation, chemical vapor deposition (CVD), vacuum deposition, and bquid-phase deposition for homojunctions CVD, vacuum deposition, and bquid-phase deposition for heterojunctions and vacuum deposition for Schottky and MIS junctions. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

Chemical Vapor Deposition. Chemical vapor deposition (CVD) of siHcon dioxide from tetraethoxysilane assisted by the presence of oxygen and a plasma is an important technology for the deposition of pure and modified dielectrics for microelectronics (61). An alternative method for the deposition of siHcon dioxide utili2es di-/-butoxydiacetoxysilane (62). 

Titanium carbide may also be made by the reaction at high temperature of titanium with carbon titanium tetrachloride with organic compounds such as methane, chloroform, or poly(vinyl chloride) titanium disulfide [12039-13-3] with carbon organotitanates with carbon precursor polymers (31) and titanium tetrachloride with hydrogen and carbon monoxide. Much of this work is directed toward the production of ultrafine (<1 jim) powders. The reaction of titanium tetrachloride with a hydrocarbon-hydrogen mixture at ca 1000°C is used for the chemical vapor deposition (CVD) of thin carbide films used in wear-resistant coatings. 

Fluoroall l-SubstitutedTitanates. Tetraliexafluoroisopropyl titanate [21416-30-8] can be prepared by the reaction of TiCl and hexafluoroisopropyl alcohol [920-66-17, in a process similar to that used for TYZOR TPT (7). Alternatively, it can be prepared by the reaction of sodium hexafluoroisopropoxide and TiCl ia excess hexafluoroisopropyl alcohol (8). The fluoroalkyl material is much more volatile than its hydrocarbon counterpart, TYZOR TPT, and is used to deposit titanium on surfaces by chemical vapor-phase deposition (CVD). 

Reactions of boron ttihalides that are of commercial importance are those of BCl, and to a lesser extent BBr, with gases in chemical vapor deposition (CVD). CVD of boron by reduction, of boron nitride using NH, and of boron carbide using CH on transition metals and alloys are all technically important processes (34—38). The CVD process is normally supported by heating or by plasma formed by an arc or discharge (39,40). 

Carbon Composites. Cermet friction materials tend to be heavy, thus making the brake system less energy-efficient. Compared with cermets, carbon (or graphite) is a thermally stable material of low density and reasonably high specific heat. A combination of these properties makes carbon attractive as a brake material and several companies are manufacturing carbon fiber—reinforced carbon-matrix composites, which ate used primarily for aircraft brakes and race cats (16). Carbon composites usually consist of three types of carbon carbon in the fibrous form (see Carbon fibers), carbon resulting from the controlled pyrolysis of the resin (usually phenoHc-based), and carbon from chemical vapor deposition (CVD) filling the pores (16). 

Carbon Composites. In this class of materials, carbon or graphite fibers are embedded in a carbon or graphite matrix. The matrix can be formed by two methods chemical vapor deposition (CVD) and coking. In the case of chemical vapor deposition (see Film deposition techniques) a hydrocarbon gas is introduced into a reaction chamber in which carbon formed from the decomposition of the gas condenses on the surface of carbon fibers. An alternative method is to mold a carbon fiber—resin mixture into shape and coke the resin precursor at high temperatures and then foUow with CVD. In both methods the process has to be repeated until a desired density is obtained. 

Sihcon carbide is also a prime candidate material for high temperature fibers (qv). These fibers are produced by three main approaches polymer pyrolysis, chemical vapor deposition (CVD), and sintering. Whereas fiber from the former two approaches are already available as commercial products, the sintered SiC fiber is still under development. Because of its relatively simple process, the sintered a-SiC fiber approach offers the potential of high performance and extreme temperature stabiUty at a relatively low cost. A comparison of the manufacturing methods and properties of various SiC fibers is presented in Table 4 (121,122). 

Of the many forms of carbon and graphite produced commercially, only pyrolytic graphite (8,9) is produced from the gas phase via the pyrolysis of hydrocarbons. The process for making pyrolytic graphite is referred to as the chemical vapor deposition (CVD) process. Deposition occurs on some suitable substrate, usually graphite, that is heated at high temperatures, usually in excess of 1000°C, in the presence of a hydrocarbon, eg, methane, propane, acetjiene, or benzene. 

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

In a chemical vapor deposition (CVD) variant of conventional powder metallurgy processing, fine chromium powder is obtained by hydrogen reduction of Crl2 and simultaneously combined with fine thorium(IV) oxide [1314-20-17, H1O2, particles. This product is isostaticaHy hot pressed to 70 MPa (700 atm) and 1100°C for 2 h. Compacts are steel clad and hot roUed to sheets (24). 

There are several vacuum processes such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), sputtering, and anodic vacuum arc deposition. Materials other than metals, ie, tetraethylorthosiHcate, silane, and titanium aluminum nitride, can also be appHed. 

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