Defects patent

Blunt chest injury Mechanical artificial heart Atrial septal defect Ventricular septal defect Patent foramen ovale Pulmonary arteriovenous fistula Particularly with right to left shunt Catheterization, angioplasty Primary oxalosis, hydatid cyst... 

Defects are subdivided into patent defects and latent defects. Patent defects are revealed within the framework of inspections and testing. First of all, the employer stipulates his or her right to take part in the testing ... 

The Zond VD - 96 portable eddy-current flaw detector-tester is an original Russian development possessing heightened sensitivity for the surface defects and high inspection capacity. (Russia patent Xs 2063025. All-Union state standard certificate of Russian Federation JVa 2846 of 14. 07. 97)... 

The application of fundamentally new ECT (Russia patent Jf 2063025) has made it possible to provide high-efficiency defect control accompanied by detecting both small surface defects and more rough under-surface defects under non-magnetic metal layer of 7 mm thick, or surface defects under protection coatings, dye, corrosion, hermetic and other type of layer of 10 mm thick. 

Seller warrants that Product delivered to [insert company name] will (1) conform to the descriptions and specifications as set forth in this Agreement (2) be of good quality and workmanship and free from defects, latent or patent and (3) be merchantable and fit and sufficient for [insert company name] s intended purpose. Payment, inspection, acceptance or use of Product will not affect Seller s obligation under this warranty. 

HIBS is the same as RBS, except that heavy ions are used instead of He++. It is an ion beam analysis tool patented by the Sandia Corporation of the USA, and was developed to enable the measurement of trace levels of surface contamination on silicon wafers. Metal contamination present in starting material is detrimental to devices, since it results in defects which limit wafer yields and impair circuit operation. 

The quality of the support is especially critical if the formation of the top layer is mainly determined by capillary action on the support (see Section 2.3.2). Then, besides a narrow pore size distribution the wettability of the support system plays a role (see Equation 2.1). An example of the synthesis of a two-layer support and ultrafUtration membrane is given in the French Patent 2,463,636 (Auriol and Trittcn 1973). In many cases an intermediate layer, whose pore sizes and thickness lie between those of the main support and the top layer (see Figure 2.2), is used. This intermediate layer can be used to improve the quality of the support system. If large capillary pressures are used to form such an intermediate layer, defects (pinholes) in the support will be transferred to this layer. This can be avoided by decreasing the acting capillary pressures or even by eliminating them. This can be done in several ways. 

The year 2000 will mark 15 years since the initial CMP patents were filed by IBM. Opportunities for expanding use of CMP in existing chip technology continue to flourish. In addition, the challenges ahead for CMP technology to keep pace are formidable in this third wave of the evolution of the technology. Increasing concern about improved within-wafer nonuniformity, better planarity (flatter surfaces), and lower defectivity levels are all requirements for advanced, sub-0.25-micron devices. In addition. 

Doubtful that the differential-pricing strategy can yield a plan for reform that would constitute a substantial improvement over the present regime, I assume that the public good strategy is more likely to yield a reform plan that would avoid the main defects of the present monopoly-patent regime while preserving most of its important benefits. 

In recent years it has become very risky practice for a patent owner to license a patent, knowing the patent has serious defects which would lead him to believe it is not valid. Serious anti-trust violations may occur in licensing a patent which the patent owner... 

I. Pinnau and W.J. Koros, Defect Free Ultra High Flux Asymmetric Membranes, US Patent 4,902,422 (February, 1990). 

A variety of Amplatzer devices are applicable for LAA occlusion including the atrial and ventricular septal defect devices, the patent foramen ovale devices, the patent ductus arteriosus devices, and other arteriovenous fistulae devices. A special fabric-free LAA plug is currently under investigation (Rg. 2). 

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