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Current density electroless deposition

The Fe, Co, and Ni deposits are extremely fine grained at high current density and pH. Electroless nickel, cobalt, and nickel—cobalt alloy plating from fluoroborate-containing baths yields a deposit of superior corrosion resistance, low stress, and excellent hardenabiUty (114). Lead is plated alone or ia combination with tin, iadium, and antimony (115). Sound iasulators are made as lead—plastic laminates by electrolyticaHy coating Pb from a fluoroborate bath to 0.5 mm on a copper-coated nylon or polypropylene film (116) (see Insulation, acoustic). Steel plates can be simultaneously electrocoated with lead and poly(tetrafluoroethylene) (117). Solder is plated ia solutioas containing Pb(Bp4)2 and Sn(Bp4)2 thus the lustrous solder-plated object is coated with a Pb—Sn alloy (118). [Pg.168]

Electroless plating rates ate affected by the rate of reduction of the dissolved reducing agent and the dissolved metal ion which diffuse to the catalytic surface of the object being plated. When an initial continuous metal film is deposited, the whole surface is at one potential determined by the mixed potential of the system (17). The current density is the same everywhere on the surface as long as flow and diffusion are unrestricted so the metal... [Pg.106]

The cycling improvement for the Cu-metallized graphite over the pristine graphite was also observed by K. Guo et al. [15] in their study of electroless Cu deposited on graphite cycled in a lithium cell with a 20% PC blend electrolyte. Also, they recorded a rate capability improvement in their Cu graphite material as well. At a current density of 1.4 mA/cm2, the cell achieved about 60% ( 200 mAh/g) of the charge capacity measured at 0.14 mA/cm2, compared to about 30% ( 100 mAh/g) for the non-treated pristine natural graphite cell [15]. [Pg.381]

Electroless deposition as we know it today has had many applications, e.g., in corrosion prevention [5-8], and electronics [9]. Although it yields a limited number of metals and alloys compared to electrodeposition, materials with unique properties, such as Ni-P (corrosion resistance) and Co-P (magnetic properties), are readily obtained by electroless deposition. It is in principle easier to obtain coatings of uniform thickness and composition using the electroless process, since one does not have the current density uniformity problem of electrodeposition. However, as we shall see, the practitioner of electroless deposition needs to be aware of the actions of solution additives and dissolved O2 gas on deposition kinetics, which affect deposit thickness and composition uniformity. Nevertheless, electroless deposition is experiencing increased interest in microelectronics, in part due to the need to replace expensive vacuum metallization methods with less expensive and selective deposition methods. The need to find creative deposition methods in the emerging field of nanofabrication is generating much interest in electroless deposition, at the present time more so as a useful process however, than as a subject of serious research. [Pg.226]

Figure 1 shows a generalized representation of an electroless deposition process obeying MPT [28]. Polarization curves are shown for the two partial reactions (full lines), and the curve expected for the full electroless solution (dashed curve). The polarization curve for anodic and cathodic partial reactions intersect the potential axis at their respective equilibrium potential values, denoted by / j]cd and respectively. At Emp, the anodic and cathodic partial current densities are equal, a... [Pg.229]

Fig. 2. Current-potential curves in Evans diagram [29] format for reduction of Cu2+ ions and oxidation of H2CO. and are the equilibrium, or open circuit, potentials for the Cu2+ reduction and H2CO oxidation reactions, respectively. Assuming negligible interfering reactions, the vertical dashed lines indicate the exchange current densities for the two half reactions, and the deposition current for the complete electroless solution. Adapted from ref. 23. Fig. 2. Current-potential curves in Evans diagram [29] format for reduction of Cu2+ ions and oxidation of H2CO. and are the equilibrium, or open circuit, potentials for the Cu2+ reduction and H2CO oxidation reactions, respectively. Assuming negligible interfering reactions, the vertical dashed lines indicate the exchange current densities for the two half reactions, and the deposition current for the complete electroless solution. Adapted from ref. 23.
As discussed earlier, it is generally observed that reductant oxidation occurs under kinetic control at least over the potential range of interest to electroless deposition. This indicates that the kinetics, or more specifically, the equivalent partial current densities for this reaction, should be the same for any catalytically active feature. On the other hand, it is well established that the O2 electroreduction reaction may proceed under conditions of diffusion control at a few hundred millivolts potential cathodic of the EIX value for this reaction even for relatively smooth electrocatalysts. This is particularly true for the classic Pd initiation catalyst used for electroless deposition, and is probably also likely for freshly-electrolessly-deposited catalysts such as Ni-P, Co-P and Cu. Thus, when O2 reduction becomes diffusion controlled at a large feature, i.e., one whose dimensions exceed the O2 diffusion layer thickness, the transport of O2 occurs under planar diffusion conditions (except for feature edges). [Pg.267]

Here F is the Faraday constant C = concentration of dissolved O2, in air-saturated water C = 2.7 x 10-7 mol cm 3 (C will be appreciably less in relatively concentrated heated solutions) the diffusion coefficient D = 2 x 10-5 cm2/s t is the time (s) r is the radius (cm). Figure 16 shows various plots of zm(02) vs. log t for various values of the microdisk electrode radius r. For large values of r, the transport of O2 to the surface follows a linear type of profile for finite times in the absence of stirring. In the case of small values of r, however, steady-state type diffusion conditions apply at shorter times due to the nonplanar nature of the diffusion process involved. Thus, the partial current density for O2 reduction in electroless deposition will tend to be more governed by kinetic factors at small features, while it will tend to be determined by the diffusion layer thickness in the case of large features. [Pg.267]

Electroless Deposition in the Presence of Interfering Reactions. According to the mixed-potential theory, the total current density, is a result of simple addition of current densities of the two partial reactions, 4 and However, in the presence of interfering (or side) reactions, 4 and/or may be composed of two or more components themselves, and verification of the mixed-potential theory in this case would involve superposition of current-potential curves for the electroless process investigated with those of the interfering reactions in order to correctly interpret the total i-E curve. Two important examples are discussed here. [Pg.147]

The second example is electroless deposition of copper from solutions containing dissolved oxygen (49,53). In this case the interfering reaction is the reduction of the oxygen, and the cathodic partial current density is the sum of two components ... [Pg.147]

Ohno and Haruyama [16] have shown that the instantaneous deposition rate of electroless plating is inversely proportional to the polarization resistance of complete plating solutions. The following generalized derivation of this relation was developed by the above authors. The partial anodic and cathodic current densities and are first written in the following generalized form ... [Pg.68]

Electroless metal deposition at trace levels in the solution is an important factor affecting silicon wafer cleaning. The deposition rate of most metals at trace levels depends mainly on the metal concentration and some may also depend on the interaction with other species as well. For copper the deposition rate at trace levels in HF solutions is different for n and p types. It depends on illumination for p-Si but not for n-Si. It is also different in HF and BHF solutions. In a HF solution the deposition process is controlled by both the supply of minority carriers and the kinetics of cathodic reactions. Thus, a high deposition rate occurs on p-Si only when both and illumination are present. In the BHF solution, the corrosion process is limited by the supply of electrons for p-Si whereas for n-Si it is limited by the dissolution of silicon because the reaction rate is indepaidmt of concentration and illumination. The amount of copper deposition does not correlate with the corrosion current density, which may be attributed to the chemical reactions associated with hydrogen reduction. More information on trace metal deposition can be found in Chapters 2 and 7. [Pg.248]

An alternative method of presenting the current-potential curves for electroless metal deposition is the Evans diagram. In this method, the sign of the current density is suppressed. Figure 22 shows a general Evans diagram with current-potential functions i = f(E) for the individual electrode processes, Eqs (43 and 44). According to this presentation of the mixed-potential theory, the current-potential curves for individual processes, ic = iu = f(E) and ia = = f(E), intersect. The... [Pg.115]


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