Crystal orientation method

Wark, Whitlock, and co-workers [72]-[75] extend these ideas in shock compression of < 111 >-oriented silicon single crystals. The method of producing the shock wave differs from previous X-ray diffraction studies, but the basic concepts are the same. Higher X-ray fluences result in a time resolution of 0.05-0.1 ns. This permits a sequence of exposures at various irradiances and delay times, thus mapping the interatomic spacing of the shock-compressed surface as a function of time. 

A method that creates patterned micro-structures distributed on the bottom wall of the micro-channel was proposed by Yang et al. (2006). A roughened bottom wall was created using the crystal orientation characteristics of the wafers. 

XRD on battery materials can be classified as powder dififaction, a technique developed by Peter Debye and Paul Scherrer. In powder dififaction the material consists of microscopic crystals oriented at random in all directions. If one passes a monochromatic beam of X-rays through a fiat thin powder electrode, a fraction of the particles will be oriented to satisfy the Bragg relation for a given set of planes. Another group will be oriented so that the Bragg relationship is satisfied for another set of planes, and so on. In this method, cones of reflected and transmitted radiation are produced (Fig. 27.2). X-ray diffraction patterns can be recorded by intercepting a... 

The most important experimental task in structural chemistry is the structure determination. It is mainly performed by X-ray diffraction from single crystals further methods include X-ray diffraction from crystalline powders and neutron diffraction from single crystals and powders. Structure determination is the analytical aspect of structural chemistry the usual result is a static model. The elucidation of the spatial rearrangements of atoms during a chemical reaction is much less accessible experimentally. Reaction mechanisms deal with this aspect of structural chemistry in the chemistry of molecules. Topotaxy is concerned with chemical processes in solids, in which structural relations exist between the orientation of educts and products. Neither dynamic aspects of this kind are subjects of this book, nor the experimental methods for the preparation of solids, to grow crystals or to determine structures. 

Although even lower WF can be achieved with, e.g., Yb (0 = 2.4 eV), the low reflectivity index of the latter makes it less suitable for OLED applications. The active metal Ca (0 = 2.60 eV) often has to be accompanied with other metals such as Al to increase the device lifetime. It is worth noting that the WF of the metals can be affected by their purity, their deposition method, and the surface structure, and the crystal orientation of the deposited films. 

There are pros and cons for each method of electrode preparation. The polycrystalline electrodes are cheap and also are nearest in character to those used in practical reactors inindustiy. However, a polycrystal consists ofinumerable grains (bits) of the electrode material, each having a different crystal orientation and hence a different catalytic property. One way of manufacturing an original metal may differ from another in the distribution of crystal faces of different kinds. Thus, irreproducibility of results in electrode kinetics is not only due to inadequate purification of solution,... 

Linear sweep voltammetry, capacitance-voltage and automated admittance measurements have been applied to characterize the n-GaAs/room temperature molten salt interphase. Semiconductor crystal orientation is shown to be an important factor in the manner in which chemical interactions with the electrolyte can influence the surface potentials. For example, the flat-band shift for (100) orientation was (2.3RT/F)V per pCl" unit compared to 2(2.3RT/F)V per pCl" for (111) orientation. The manner in which these interactions may be used to optimize cell performance is discussed. The equivalent parallel conductance method has been used to identify the circuit elements for the non-illum-inated semi conductor/electrolyte interphase. The utility of this... 

Wet chemical anisotropic etching of monocrystalline silicon has been widely applied in microtechnology (18,20). This method is based on the dependence of etching velocity on crystal orientation, so only a few basic geometries can be... 

In contrast to nanowires synthesized by the pressure injection method, nanowires derived electrochemically are typically polycrystalline with no preferred crystal orientation. However, some exceptions occur. For example, polycrystalline CdS nanowires fabricated by ac electrodeposition in anodic alumina were shown to have a preferred wire growth orientation along the c axis (Routkevitch et al., 1996). Recently, Xu et al. (2000a, 2000b) prepared... 

Recently, the VLS growth method has been extended beyond the gas-phase reaction to synthesis of Si nanowires in Si-containing solvent (Holmes et al, 2000). In this case 2.5-nm Au nanocrystals were dispersed in supercritical hexane with a silicon precursor (e.g., diphenylsilane) under a pressure of 200-270 bar at 500°C, at which temperature the diphenylsilane decomposes to Si atoms. The Au nanocrystals serve as seeds for the Si nanowire growth, because they form an alloy with Si, which is in equilibrium with pure Si. It is suggested that the Si atoms would dissolve in the Au crystals until the saturation point is reached then they are expelled from the particle to form a nanowire with a diameter similar to the catalyst particle. This method has an advantage over the laser-ablated Si nanowire in that the nanowire diameter can be well controlled by the Au particle size, whereas liquid metal droplets produced by the laser ablation process tend to exhibit a much broader size distribution. With this approach, highly crystalline Si nanowires with diameters ranging from 4 nm to 5 nm have been produced by Holmes et al. (2000). The crystal orientation of these Si nanowires can be controlled by the reaction pressure. 

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