Flat band

Fig. V-14. Energy level diagram and energy scales for an n-type semiconductor pho-toelectrochemical cell Eg, band gap E, electron affinity work function Vb, band bending Vh, Helmholtz layer potential drop 0ei. electrolyte work function U/b, flat-band potential. (See Section V-9 for discussion of some of these quantities. (From Ref. 181.)...

The ionization energies and impurity levels are shown in the flat-band figure next to the configuration diagram. 

Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the...

Figure 14-4. MIS junction under negative and positive bias (a) flat-band, (b) accumulation (l/<0), (c) depletion (l/>0), and (d) inversion (V>0, Ef>E,).

Here, the flat-band potential was neglected.) A typical set of drain current-voltage curves for various gate voltages is shown in Figure 14-8. 

Figure 15-16. Schematic flat band diagram of a MDMO-PPV/Cfcu system (a) and under short circuit conditions (b).

Although the conductivity change Aa [relation (8)] of microwave conductivity measurements and the Ac of electrochemical measurements [relation (1)] are typically not identical (owing to the theoretically accessible frequency dependence of the quantities involved), the analogy between relations (1) and (8) shows that similar parameters are addressed by (photo)electrochemical and photoinduced microwave conductivity measurements. This includes the dynamics of charge carriers and dipoles, photoeffects, flat band and capacitive behavior, and the effect of surface states. 

Flade potential, 247 Flame-annealed gold surfaces and the work of Kolb, 81 Flat band potential, 483 Fluctuations asymmetrical and unstable systems, 255 controlling progress in pitting, 299 in pitting dissolution, 251 and corrosion processes, 217 during dissolution, 252 at electrodes, theory, 281 during film breakdown, 233 and mathematical expressions thereof, 276... 

Photo effects, as a function of flat band potential, 481... 

Primarily connected to corrosion concepts, Pourbaix diagrams may be used within the scope of prediction and understanding of the thermodynamic stability of materials under various conditions. Park and Barber [25] have shown this relevance in examining the thermodynamic stabilities of semiconductor binary compounds such as CdS, CdSe, CdTe, and GaP, in relation to their flat band potentials and under conditions related to photoelectrochemical cell performance with different redox couples in solution. 

Added stability in PEC can be attained through the use of non-aqueous solvents. Noufi et al. [68] systematically evaluated various non-aqueous ferro-ferricyanide electrolytes (DMF, acetonitrile, PC, alcohols) for use in stabilizing n-CdSe photoanodes. Selection of the solvent was discussed in terms of inherent stability provided, the rate of the redox reaction, the tendency toward specific adsorption of the redox species, and the formal potential of the redox couple with respect to the flat band potential (attainable open-circuit voltage). On the basis of these data, the methanol/Fe(CN)6 system (transparent below 2.6 eV) was chosen as providing complete stabilization of CdSe. Results were presented for cells of the type... 

The strong photocorrosion effect on an electrodeposited CdSe film treated near short-circuit conditions (positive to the flat band potential) in a polysulfide media under intense illumination is shown in Fig. 5.5, as manifested by the formation of numerous, regularly arranged pinholes often reaching the substrate surface [99],... 

Efficient photoelectrochemical decomposition of ZnSe electrodes has been observed in aqueous (indifferent) electrolytes of various pHs, despite the wide band gap of the semiconductor [119, 120]. On the other hand, ZnSe has been found to exhibit better dark electrochemical stability compared to the GdX compounds. Large dark potential ranges of stability (at least 3 V) were determined for I-doped ZnSe electrodes in aqueous media of pH 0, 6.3, and 14, by Gautron et al. [121], who presented also a detailed discussion of the flat band potential behavior on the basis of the Gartner model. Interestingly, a Nernstian pH dependence was found for... 

C/pB estimated by both electrical (Mott-Schottky) and optical (photocurrent voltammetry) methods in the media studied, for (11 l)-oriented ZnSe electrode surfaces. A different variation was observed for the (110) orientation at pH >6. At pH 0, for both (110) or (11 l)-oriented electrode surface, the flat band potential value was -1.65 V (SHE) and the measured potential stability range (no detected current) was -0.35 to +2.65 V (SHE). A comparison of band levels with the other II-VI compounds as well as decomposition levels of ZnSe is given in Fig. 5.6. 

Fig. 5.8 The energy levels of n-type M0S2 at the flat band potential relative to the positions of various redox couples in CH3CN/[n-Bu4N]C104 solution. The valence band edge of the semiconductor as revealed by accurate flat band potential measurement is at ca. +1.9 V vs. SCE implying that photooxrdations workable at Ti02 are thermodynamically possible at illuminated M0S2 as well. (Reproduced with permission from [137], Copyright 2010, American Chemical Society)...

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