Crystal orienting

Figure A3.10.15 NFl synthesis activity of different Fe single-crystal orientations [32]. Reaction conditions were 20 atm and 600-700 K.

It is relatively straightforward to detemiine the size and shape of the three- or two-dimensional unit cell of a periodic bulk or surface structure, respectively. This infonnation follows from the exit directions of diffracted beams relative to an incident beam, for a given crystal orientation measuring those exit angles detennines the unit cell quite easily. But no relative positions of atoms within the unit cell can be obtained in this maimer. To achieve that, one must measure intensities of diffracted beams and then computationally analyse those intensities in tenns of atomic positions. 

It is wortli noting tliat under activation control tlie reaction rate depends on crystal orientation as tlie strengtli of tlie... 

Under diffusion-controlled dissolution conditions (in the anodic direction) the crystal orientation has no influence on the reaction rate as only the mass transport conditions in the solution detennine the process. In other words, the material is removed unifonnly and electropolishing of the surface takes place. 

M-type ferrites are mainly used as permanent magnet material. They have largely replaced the alnicos as preferred permanent magnet material, as a result of the lower material and processing costs. These ferrites were first introduced under the trade name Ferroxdure, the isotropic form in 1952 (22) and the anisotropic (crystal oriented) form in 1954 (23), and are widely available commercially under various trade names such as Oxid and Koerox. They cover about 55% of the world market of permanent magnet materials, corresponding to 1100 million U.S. doUars (1991), as weU as 55% of the U.S. market, at 300 million. 

Theoretical studies of diffusion aim to predict the distribution profile of an exposed substrate given the known process parameters of concentration, temperature, crystal orientation, dopant properties, etc. On an atomic level, diffusion of a dopant in a siUcon crystal is caused by the movement of the introduced element that is allowed by the available vacancies or defects in the crystal. Both host atoms and impurity atoms can enter vacancies. Movement of a host atom from one lattice site to a vacancy is called self-diffusion. The same movement by a dopant is called impurity diffusion. If an atom does not form a covalent bond with siUcon, the atom can occupy in interstitial site and then subsequently displace a lattice-site atom. This latter movement is beheved to be the dominant mechanism for diffusion of the common dopant atoms, P, B, As, and Sb (26). 

Orientation. Most articles made of HDPE, including film, fiber, pipes, and injection-molded articles, exhibit some degree of molecular and crystal orientation (21). In some cases, orientation develops spontaneously for example, during melt flow into a mold and its subsequent crystallisation. When blown HDPE film and fiber are manufactured, orientation can be introduced dehberately by stretching. 

A new chemical sensor based on surface transverse device has been developed (99) (see Sensors). It resembles a surface acoustic wave sensor with the addition of a metal grating between the tranducer and a different crystal orientation. This sensor operates at 250 mH2 and is ideally suited to measurements of surface-attached mass under fluid immersion. By immohi1i2ing atra2ine to the surface of the sensor device, the detection of atra2ine in the range of 0.06 ppb to 10 ppm was demonstrated. 

Factors that affect ]1 include loading geometry, microstmcture, crystal orientation, surface chemistry, environment, temperature, and the presence of lubricants. 

An example of research in the micromechanics of shock compression of solids is the study of rate-dependent plasticity and its relationship to crystal structure, crystal orientation, and the fundamental unit of plasticity, the dislocation. The majority of data on high-rate plastic flow in shock-compressed solids is in the form of ... 

Gupta [28] presents results on the effect of crystal orientation on shock propagation in LiF crystals. This work supports earlier studies and shows... 

The crystals, or grains, in a polycrystal fit together exactly but their crystal orientations differ (Fig. 10.4). Where they meet, at grain boundaries, the crystal structure is disturbed, but the atomic bonds across the boundary are numerous and strong enough that the boundaries do not usually weaken the material. 

Poisson s ratio can vary somewhat but at present does not provide much choice. There is evidence that it is affected by crystal orientation but specifying and providing control are hardly practical. The value of 0.3 is frequently used for convenience in calculations. 

The degree of surface cleanliness or even ordering can be determined by REELS, especially from the intense VEELS signals. The relative intensity of the surface and bulk plasmon peaks is often more sensitive to surface contamination than AES, especially for elements like Al, which have intense plasmon peaks. Semiconductor surfaces often have surface states due to dangling bonds that are unique to each crystal orientation, which have been used in the case of Si and GaAs to follow in situ the formation of metal contacts and to resolve such issues as Fermi-level pinning and its role in Schottky barrier heights. 

SIMS, and SNMS in rare cases, such as for HgCdJTei samples or some polymers, the sample structure can be modified by the incident ion beam. These effects can often be eliminated or minimized by limitii the total number of particles incident on the sample, increasing the analytical area, or by cooling the sample. Also, if channeling of the ion beam occurs in a crystal sample, this must be included in the data analysis or serious inaccuracies can result. To avoid unwanted channelii, samples are often manipulated during the analysis to present an average or random crystal orientation. 

Crater Bottom Roughening. Depth resolution is also limited by roughening of the crater bottom under the action of ion bombardment. On polycrystalline samples this can be because of different sputter yields of different crystal orientations, because the sputter yields of single crystals can vary by a factor of two depending on their orientation. Because of this type of roughening, depth resolution deteriorates with increasing sputter depth. 

Figure 4,2, Medal struck in Austria to commemorate the 50th anniversary of the discovery of the critical shear stress law by Erich Schmid. The image represents a stereographic triangle with "isobars showing crystal orientations of constant resolved shear stress (courtesy H.P. Stiiwe).

Yield Stress The effect of hydrogen on the yield stress of iron and steels is unpredictable. For very pure iron single crystals and polycrystals the yield stress is frequently found to be decreased by hydrogen, but it may increase or stay the same, depending on the dislocation structure, crystal orientation and purity of the iron . Little information is available for steels. 

In an anisotropic material, the properties depend on the direction in which they are tested. For example, rolled metals, which are anisotropic, tend to develop a crystal orientation in the rolling direction. Thus rolled and sheet-metal products have different mechanical properties in the two major directions. Also, extruded plastic film can have different properties in the machine and transverse directions. These materials are oriented biaxi-ally and are anisotropic. (As reviewed above under EXTRUSION, Orientation). 

At one extreme, one has the structural models of perfect crystals, which have long-range positional order for all the atoms (apart thermal motion). A diffraction experiment on a set of such crystals oriented in one direction (corresponding, in most real cases of polymeric materials, to an oriented fiber) would result in a pattern of sharp reflections organized in layer lines. 

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