Chemical vapor deposition silane

Viswanathan R, Thompson D L and Raff L M 1984 Theoretical investigations of elementary processes in the chemical vapor deposition of silicon from silane. Unimolecular decomposition of SiH J. Chem. Phys. 80 4230 0... 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

There are several vacuum processes such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), sputtering, and anodic vacuum arc deposition. Materials other than metals, ie, tetraethylorthosiHcate, silane, and titanium aluminum nitride, can also be appHed. 

Chemical vapor deposition is distinguished from physical vapor deposition processes by the use of a chemical reaction, usually a decomposition, to create the chemical species that is deposited. An example important to the microelectronics industry is the formation of polycrystalline silicon by the decomposition of silane ... 

For illustrative purposes, the process of deposition of Si onto graphite is being used as an example. The 15 pm natural graphite precursors were introduced into the industrial size chemical vapor deposition reactor, where a thermal decomposition of silane (SiH4) into the silicon and hydrogen was taking place under inert gas in accordance with the equation (1) ... 

Chemical vapor deposition (CVD) reactions in electronics materials processing provide further examples. One is the deposition of Si from silane ... 

Significance interpretation activities, EIA, 10 236, 10 240t Si-H absorption, 20 14 Si-hybrid sealants, 22 38-40, 48t Silages, 20 863 Silane(s), 13 612, 22 489, 547 adhesion of sealant, 22 34 adhesion-promoting, 22 41 chemical vapor deposition precursor, 5 805t... 

A range of procedures have been described for the silanization of glass, including approaches employing both elevated and room-temperature organic phase, aqueous phase, vapor phase, and chemical vapor deposition of the silane. However, little has been published with regard to the rehability and... 

Koh J, Ferlauto AS, Rovira PI, Wronski CR, Collins RW (1999) Evolutionary phase diagram for plasma enhanced chemical vapor deposition of silicon thin films from hydrogen diluted silane. Appl Phys Lett 75 2286-2289... 

On a metal surface, silicide layers can be formed by two methods. In the first, Si atoms are vapor deposited by heating either a well degassed silicon wafer or a silicon rod to near its melting point. In the second method the metal is heated in 10 to 50 mTorr of silane for a desired length of time, usually about 10 to 60 s at a desired temperature, usually about 300 to 700°C. The first method is better suited for studying very early stages of silicide formation, the second more convenient for growing thick layers of silicides. Chemical vapor deposition or laser enhanced chemical vapor deposition may probably be used also, but have not yet been explored. 

W.G. Breiland, M.E. Coltrin, and P. Ho. Comparisons between a Gas-Phase Model of Silane Chemical Vapor Deposition and Laser-Diagnostic Measurements. J. Appl. Phys., 59 3267-3273,1986. 

Chemical vapor deposition of silanes, along with a subsequent calcination using steam, can be utilized to deposit silica (Si(>2) inside the pore system. By variation oF the temperature, the partial pressure of the silane and the duration of the treatment, location and amount of the deposited material can be controlled [104]. When, for example, tetraethoxy- or tetrame-thoxysilane are used as reacting agents on a mordenite, ZSM-5, or /1-zeolite, then a controlled deactivation of only the external cristallite surface is possible [23, 44]. This is because these are rather bulky molecules which are not able to diffuse into the pore system of the crystallite. Alternatively, an irreversible adsorption of bulky bases may serve to destroy the undesired external acidity. Suitable basic compounds are 4-methylquino-line for ZSM-5 [2] and tributylphosphite for mordenites [71]. 

Silicon carbide can be made by chemical vapor deposition on a substrate heated to around 1300°C (DeBolt et al, 1974). The substrate can be tungsten or carbon. The reactive gaseous mixture contains hydrogen and alkyl silanes. Typically, a gaseous mixture consisting of 70% hydrogen and 30% silanes is introduced at the... 

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