Chemical vapor deposition reactors devices

Modeling of Chemical Vapor Deposition Reactors for the Fabrication of Microelectronic Devices... 

Jensen, K. F., Modeling of chemical vapor deposition reactors for the fabrication cf microelectronic devices, in Chemical and Catalytic Reactor Modeling. Washington, D.C. American Chemical Society, 1984. 

Franz et al. [93] developed a palladium membrane micro reactor for hydrogen separation based on MEMS technology, which incorporated integrated devices for heating and temperature measurement. The reactor consisted of two channels separated by the membrane, which was composed of three layers. Two of them, which were made of silicon nitride introduced by low-pressure chemical vapor deposition (0.3 pm thick) and silicon oxide by temperature treatment (0.2 pm thick), served as perforated supports for the palladium membrane. Both layers were deposited on a silicon wafer and subsequently removed from one side completely... 

One sign of progress is the extent to which sophisticated research on transport phenomena, particularly mass transfer, has penetrated several other fields, including those described in later papers of this volume. Examples include fundamental work on the mechanics of trickle beds [17] within reactor engineering studies of dispersion in laminar flows [18] in the context of separations important to biotechnology coupling between fluid flows and mass transfer in chemical vapor deposition processes for fabrication of semiconductor devices [19] and optical fiber preforms [20] and the simulation of flows in mixers, extruders, and other unit operations for processing polymers. 

Chemical vapor deposition is a key process for thin film formation in the development and manufacture of microelectronic devices. It shares many kinetic and transport phenomena with heterogeneous catalysis, but CVD reactor design has not yet reached the level of sophistication used in analyzing heterogeneous catalytic reactors. With the exception of the tubular LPCVD reactor, conventional CVD reactors may be viewed as variations on the original horizontal reactor. These reactors have complex flow fields and it is consequently difficult to control and predict the effect of operating conditions on the film thickness and composition. 

Chemical vapor deposition is an important technique in the production of all kinds of solid-state devices. In the process, the active metal organic vapor is swept into a two-dimensional sht reactor by a carrier gas, and deposition occurs at the hot top and bottom plates. The reaction at the plate surfaces can be written... 

Since no synthetic chemistiy infrastructure was available at the Department (or, indeed, the Institute) before 2008, polyciystalline samples of catalysts had to be obtained from external, often industrial, partners. In order to produce model systems in house, researchers in the Department of Inorganic Chemistry developed a suite of instruments allowing the synthesis of metal oxides by physical vapor deposition of elements and by annealing procedures at ambient pressure. They chose the dehydrogenation of ethylbenzene to styrene on iron oxides as the subject of their first major study. Figure 6.6 summarizes the main results. The technical catalyst (A) is a complex convolution of phases, with the active sites located at the solid-solid interface. It was possible to synthesize well-ordered thin films (D) of the relevant ternary potassium iron oxide and to determine their chemical structure and reactivity. In parallel. Department members developed a micro-reactor device (B) allowing them to measure kinetic data (C) on such thin films. In this way, they were able to obtain experimental data needed for kinetic modeling under well-defined reaction conditions, which they could use to prove that the model reaction occurs in the same way as the reaction in the real-life system. Thin oxide... 

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