Chemical mechanical planarization applications

The acceptance of chemical mechanical planarization (CMP) as a manufacturable process for state-of-the-art interconnect technology has made it possible to rely on CMP technology for numerous semiconductor manufacturing process applications. These applications include shallow trench isolation (STI), deep trench capacitors, local tungsten interconnects, inter-level-dielectric (ILD) planarization, and copper damascene. In this chapter. 

B. Withers, E. Zhoa, R. Jairath, A Wide Margin CMP and Clean Process for Shallow Trench Isolation Applications, 1998 Proceedings of the Third International Chemical-Mechanical Planarization for VLSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, CA, pp. 319-327, Feb. 19-20,1998. 

A. Hu, X. Zhang, E. Sachs, P. Renteln, Application of Run by Run Controller to the Chemical-Mechanical Planarization Process, IEEE Proceeding of the 15th International... 

Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li Copyright 2008 John Wiley Sons, Inc. 

Zantye PB, Kumar A, Sikder AK. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 2004 45(3-6) 89-220. 

Ramarajan S. Chemical-mechanical planarization of copper/tantalum for microelectronic applications [dissertation]. Potsdam (NY) Clarkson University 2000. 

This chapter gives an overview of the defects that can be generated or revealed during chemical-mechanical planarization (CMP). Most defects are specific to the type of CMP operation the wafer has just experienced. For this and other obvious reasons, this chapter is organized by CMP applications. However, there are some families of defects that are common to most CMP processes. Indeed, scratches [1-5], remaining particles [6], and surface residues [7] could be found in all CMP applications. Therefore, the materials are presented in the order of complexity, from the simplest such as oxide CMP to the most sophisticated such as copper CMP. Almost all defects presented in oxide CMP could exist in the other applications such as poly-Si, W CMP, and Cu CMP. 

The silicon dioxide chemical mechanical planarization (oxide CMP) technique is used in at least four applications ... 

Microelectronic applications of chemical mechanical planarization / edited by Yuzhuo Li. 

CHEMICAL MECHANICAL PLANARIZATION Table 1.4 Materials to be Polished and Possible Applications... 

Chemical Mechanical Planarization (CMP) plays an important role in today s microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology - until now. 

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