Silicon dioxide chemical mechanical

Choi W, Lee S-M, Singh R. Further investigation of effects of ph on silicon dioxide chemical mechanical polishing (CMP). The Electrochemical Society 204th Meeting 2003. 

The silicon dioxide chemical mechanical planarization (oxide CMP) technique is used in at least four applications ... 

Silicon Dioxide. Si02 layers produced by PECVD are useful for intermetal dielectric layers and mechanical or chemical protection and as diffusion masks and gate oxides on compound-semiconductor devices. The films are generally formed by the plasma-enhanced reaction of SiH4 at 200-300 °C with nitrous oxide (N20), but CO, C02, or 02 have also been used (238-241). Other silicon sources including tetramethoxysilane, methyl dimethoxysilane, and tetramethylsilane have also been investigated (202). Diborane or phosphine can be added to the deposition atmosphere to form doped oxide layers. 

D. J. Monk, D. S. Soane, and R. T. Howe, A review of the chemical reaction mechanism and kinetics for hydrofluoric acid etching of silicon dioxide for surface micromachining applications. Thin Solid Films 232, 1, 1993. 

Metal-RIE process was/is used in the fabrication of Al inter-coimects on chips." This process is depicted in four steps in Fig. 2. The first step in the metal-RIE process is sputter deposition of a blanket thin film of Al (or Al alloys, such as Al-Cu, Al-Si) over a planerized dielectric (e.g., silicon dioxide). In the next step, the unwanted metal is etched away by reactive ion etching (RIE) through a photoresist mask. The features produced this way are separated, electrically isolated, metal Al conductor lines. In the RIE process chemicaly active ions such as F or Cl bombard the Al surface and form volatile aluminum fluorides or chlorides, which are then pumped away in the vacuum system. After etcliing, a dielectric is deposited in such a fashion that it fills the gaps between the lines as well as above them. In the last step, the dielectric is planarized using the chemical mechanical polishing (CMP) technique. ... 

CVD is used to produce microelectromechanical structures (MEMS), very small devices. MEMS technology allows both electrrMiic circuits and mechanical devices to be manufactured on a silicon chip. MEMS structures can be made from silicon wafers with CVD deposits of polycrystalline sUicOTi (polysDicon) films and sacrificial silicon dioxide layers that are later removed by chemical etching [14]. 

Dandu, P.R.V., Peethala, B.C., Babu, S.V., 2010. Role of different additives on silicon dioxide film removal rate during chemical mechanical pohshing using ceria-based dispersions. J. Electrochem. Soc. 157,11869—11874. 

Dandu, P.R.V., Penta, N.K., Babu, S.V., 2010d. Novel alpha-amine-functionalized silica-based dispersions for selectively pohshing poly silicon and Si(lOO) over silicon dioxide, silicon nitride or copper during chemical mechanical polishing. Colloids Surf. A 371 (1—3), 131-136. 

Surface chemical/mechanical stabilization sittface passivation Silicon dioxide Optical devices (79, 80, 81, 82) Posada et al. (2006), Fernandes et al. (1999), Fang et al. (2010),... 

Die passivation layers were first introduced to protect the metallisation of integrated circuits from mechanical damage during assembly. However, it soon became apparent that the passivation layer was a crucial factor in determining the failure rate in moist ambients. Originally, pure chemical vapour deposition (CVD) silicon dioxide was used, but later phosphorus was added to relieve strain in the layer and thus prevent cracking and loss of adhesion. There is also interest in, and limited use of, other forms of passivation such as silicon nitride, oxynitride and polyimide. 

The main chemical routes for vulcanisation of silicone elastomers are 1) Elevated temperatures cures and 2) Room temperature vulcanisation mechanisms. Organic peroxide cures are used in elevated temperature cures. Since the organic peroxides are inhibited by most carbon blacks, non black reinforcing fillers such as precipitated silicas, titanium dioxide and zinc oxide are used. Room temperature vulcanisation is normally used with low consistency silicone elastomers. 

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