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Chalcopyrite solar cells

CuInS2 films deposited in this study were observed to be crystallographi-cally (220/204) oriented or (112) oriented by XRD. Chalcopyrite solar cells... [Pg.183]

Allsop, N. A. Hansel, A. Visbeck, S. Niesen, T. R Lux-Steiner, M. C. Fischer, Ch.-H. 2006. The dry and damp heat stability of chalcopyrite solar cells prepared with an indium sulphide buffer deposited by the spray-ILGAR technique. Thin Solid Films 511-512 55-59. [Pg.279]

Fig. 9.2. Scanning electron micrograph of the cross-section of a typical chalcopyrite solar cell with Cu(In,Ga)Se2 (CIGSe) absorber (substrate now shown). Reprinted with permission from [1]... Fig. 9.2. Scanning electron micrograph of the cross-section of a typical chalcopyrite solar cell with Cu(In,Ga)Se2 (CIGSe) absorber (substrate now shown). Reprinted with permission from [1]...
Table 9.1. Performance of ZnO/chalcopyrite solar cells without buffer layer... Table 9.1. Performance of ZnO/chalcopyrite solar cells without buffer layer...
Segregated phases, other than the target material, usually found on the surface of deposited polycrystalline chalcopyrite semiconductor films, such as CuInSc2 and CuInS2, constitute a shortcoming in material quality for solar cell and other applications. In fact, these films are usually prepared purposefully with an excess of... [Pg.117]

Siebentritt, S. 2002. Wide gap chalcopyrites material properties and solar cells. Thin Solid Films 403-404 1-8. [Pg.104]

Klenk, M. Schenker, O. Alberts, V. Bucher, E. 2001. Properties of flash evaporated chalcopyrite absorber films and solar cells. Thin Solid Films 387 47 19. [Pg.195]

The Se-capped Cu(In,Ga)Se2 films used for the present studies were prepared at the Zentrum fur Sonnenenergie und Wasserstoffforschung in Stuttgart, Germany with 30% of the In substituted by Ga. The films are also used for solar cell preparation and yield an energy conversion efficiency of-14% [36,123]. Good conversion efficiencies are obtained from films, which are prepared with a slight Cu deficiency (—22% Cu instead of the nominal 25 % of Cu in stoichiometric chalcopyrites) [124]. Surfaces of such materials are, however, considerably depleted of Cu and show a surface composition that corresponds to the Cu(In,Ga Ses vacancy compound with a typical Cu concentration of 11 — 13% [36,123,125]. The importance of this compound for the Cu(In,Ca)Se2 surfaces and interfaces has been pointed out first by Schmid et al. [126,127]. [Pg.164]

Fig. 9.1. Schematic cross-section of a chalcopyrite-based thin-film solar cell. Typical materials for the individual parts of the cell are given in square brackets... Fig. 9.1. Schematic cross-section of a chalcopyrite-based thin-film solar cell. Typical materials for the individual parts of the cell are given in square brackets...
This book is devoted to the properties, preparation and applications of zinc oxide (ZnO) as an transparent electrode material. It focuses on ZnO for thin film solar cell applications and hopefully inspires also readers from related fields. The book is structured into three parts to serve both as an overview as well as a data collection for students, engineers and scientists. The first part, Chaps. 1-4, provide an overview of the application and fundamental material properties of ZnO films and their surface and interfaces properties. Chaps. 5-7 review thin film deposition techniques applied for ZnO preparation on lab scale but also for large area production. Finally, Chaps. 8 and 9 are devoted to applications of ZnO in silicon- and chalcopyrite-based thin film solar cells, respectively. One should note that the application of CVD grown ZnO in silicon thin film cells is discussed earlier in Chap. 6. [Pg.451]

Chemical bath deposition (CBD) has emerged as a leading deposition method in the area of thin film (CBD) solar cells based on CdTe and on chalcopyrite... [Pg.220]

The in situ interface conditioning of p-lnP by photoelectrochemical processes, described in Section 2.4.2, is a key procedure for the preparation of efficient and stable photovoltaic and photoelectrocatalytic solar cells and surface analyses wiU be presented that describe the induced chemical and electronic changes. The ternary chalcopyrites CulnSe2 and CulnS2 have meanwhile been developed for use in commercially available solid-state solar cells. For the sulfide-based cell, the use of a toxic KCN etch step of Cu-rich CulnS2 to remove Cu-S surface phases is considered as deleterious for wide-scale application and an electrochemical method will be presented in Section 2.4.3 that replaces the chemical etching procedure. [Pg.107]

The selection made covers the first efficient and stable system based on the ternary chalcopyrite CulnSe2, an electrochemical treatment to avoid a toxic etching step in solid-state CIS device fabrication, the first stable and efficient liquid-junction solar cell (InP), and a novel concept where nanoemitters, interspersed in a nanoporous passivating film, are used to scavenge excess minority carriers. [Pg.145]


See other pages where Chalcopyrite solar cells is mentioned: [Pg.191]    [Pg.1]    [Pg.198]    [Pg.415]    [Pg.417]    [Pg.419]    [Pg.419]    [Pg.421]    [Pg.423]    [Pg.425]    [Pg.427]    [Pg.429]    [Pg.431]    [Pg.433]    [Pg.435]    [Pg.437]    [Pg.191]    [Pg.1]    [Pg.198]    [Pg.415]    [Pg.417]    [Pg.419]    [Pg.419]    [Pg.421]    [Pg.423]    [Pg.425]    [Pg.427]    [Pg.429]    [Pg.431]    [Pg.433]    [Pg.435]    [Pg.437]    [Pg.45]    [Pg.254]    [Pg.89]    [Pg.93]    [Pg.158]    [Pg.184]    [Pg.234]    [Pg.415]    [Pg.417]    [Pg.427]    [Pg.451]    [Pg.950]    [Pg.1375]    [Pg.127]    [Pg.949]    [Pg.1374]    [Pg.62]    [Pg.394]    [Pg.138]   
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