Ceramic metallization technologies thin-film

Solution Deposition of Thin Films. Chemical methods of preparation may also be used for the fabrication of ceramic thin films (qv). MetaHo-organic precursors, notably metal alkoxides (see Alkoxides, metal) and metal carboxylates, are most frequently used for film preparation by sol-gel or metallo-organic decomposition (MOD) solution deposition processes (see Sol-GEL technology). These methods involve dissolution of the precursors in a mutual solvent control of solution characteristics such as viscosity and concentration, film deposition by spin-casting or dip-coating, and heat treatment to remove volatile organic species and induce crystaHhation of the as-deposited amorphous film into the desired stmcture. 

In supported metallic catalysts, the metals are usually from Groups VIII and VB of the Periodic Table. For highly dispersed metallic catalysts, the support or the carrier is usually a ceramic oxide (silica or alumina) or carbon with a high surface area, as described in chapter 2. Supported metallic catalysts can be prepared in a number of ways as described by Anderson (1975). A description of some of the methods used to prepare representative model (thin film) and practical (technological) powder systems follows. 

Since natural sunlight can only penetrate a few microns depth, the use of thin films of titania applied to ceramic or metallic supports as maintenance free decontamination catalysts for the photocatalytic oxidation of volatile organic compounds is of interest for the abatement or control of these emissions. The sol-gel technology can be readily incorporated as a washcoating step of the catalyst supports that may be subsequently heat-treated to fix the titania to the support. The surface area, porosity and crystalline phases present in these gels is important in controlling their catalytic activity. Furthermore, the thermal stability and development of porosity with heat-treatment was important if the sol-gel route is to be used as a washcoating step to produce thin films. 

Numerous ceramics are deposited via chemical vapor deposition. Oxide, carbide, nitride, and boride films can all be produced from gas phase precursors. This section gives details on the production-scale reactions for materials that are widely produced. In addition, a survey of the latest research including novel precursors and chemical reactions is provided. The discussion begins with the mature technologies of silicon dioxide, aluminum oxide, and silicon nitride CVD. Then the focus turns to the deposition of thin films having characteristics that are attractive for future applications in microelectronics, micromachinery, and hard coatings for tools and parts. These materials include aluminum nitride, boron nitride, titanium nitride, titanium dioxide, silicon carbide, and mixed-metal oxides such as those of the perovskite structure and those used as high To superconductors. 

A whole variety of technologies exist for passive and integrated circuit (IC) capacitor fabrication. There is however one common denominator for all these different technologies they all make use of deliberately chosen valve metal, Si and ceramic oxides as the dielectric thin films, which therefore play a key role in electronics. The reasons for this and the underlying research issues were discussed in this chapter. 

CVD is published every two months as a special section of the world s leading material science journal Advanced Materials. The deposition of thin films of metal, ceramics, and semiconductors using CVD, their characterization, related vacuum technology and equipment, and related aspects of surface science are core areas covered in this journal. 

Bare die and other chip devices are attached with electrically conductive or nonconductive adhesives to ceramic substrates having defined circuit patterns produced by thin-film vapor deposition and photoetching of metals or by screen-printing and firing of thick-film pastes. With recent advancements in fine-line printed-circuit boards, adhesives are also finding use in attaching bare die to PWBs, a technology known as chip-on-board (COB). 

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