Boron doping reaction with

Hazardous Decomp. Prods. Combustion boron oxide reaction with water releases methane NFPA Health 4, Flammability 4, Reactivity 3 Storage Handle only in sealed, purged systems store cylinders below 55 C away from direct sunlight, precipitation, mech. damage Uses Synthesis reagent as reactor fuel additive/surf. treatment doping material in semiconductor materials in amorphous devices for depositing a p-type silicon-carbon alloy with improved optical props. 

Diamond doped with boron is conductive, and hence can serve as a highly inert and robust electrode material. Indeed, there are many reports on the study of electrochemical reactions with -> boron-doped diamond electrodes. 

A composite biomaterial formed by Pd metal, carbon-ceramic mixture and oxidoreductase enz3ones constitutes a new t3rpe of renewable smface biosensor with a controllable size reaction layer [198]. The carbon provides the electrical conductivity, the enzymes are used for biocatalyst process, metallic palladimn is used for electrocatalysis of biochemical reaction product and the porous silica provides a rigid skeleton. The hydrophobicity of this composite material allows only a limited section of the electrode to be wetted by the aqueous analyte, thus providing a controlled thickness reactive layer. Another biocomposite material containing enzyme-modifled boron-doped diamond was used in the development of biosensors for the determination of phenol derivatives [199], alcohol [200] and glucose [201]. 

Figure 4. FT-ICR mass spectra showing evidence for the production of boron and boron/potassium doped 60-ati n fuiloenes. The bottom panel shows the result of reaction with ammonia. Note that the boron-doped clusters have been titrated with ammonia, demonstrating that the boron is substituting for a carbon as part of the fullerene cage. Note also that the clusters in the top panel marked K(K C4o) and K2(K C o) are missing after reaction with ammonia in the bottom panel, demonstrating that the extra potassium atoms were on the outside, unprotected by the fullerene cage.

Boron-doped diamond (BDD) thin films were synthesized at CSEM (Neuchatel, Switzerland) by the hot filament chemical vapor deposition technique (HF CVD) on p-type, low-resistivity (l-3mQcm), single-crystal, silicon wafers (Siltronix). The temperature of the filament was between 2440 and 2560 °C and that of the substrate was monitored at 830 °C. The reactive gas was a mixture of 1% methane in hydrogen, containing trimethylboron as a boron source (1-3 ppm, with respect to H2). The reaction chamber was supplied with the gas mixture at a flow rate of 51 min giving a growth rate of 0.24 pm h for the diamond layer. The obtained diamond film has a thickness of about 1 pm ( 10%) and a resistivity of 15mQcm ( 30%). This HF CVD process produces columnar, random textured, polycrystalline films [9]. 

The shortened electron life model is mainly based on the observation that the decrease of etch rate with boron concentration exhibits an inverse fourth power dependence on the boron concentration. Raley et postnlated that etching in KOH is a corrosion process and that the etch rate reduction at high boron doping levels is due to the decreased electron concentration required for the reduction of hydrogen in the etching process described by the following reactions ... 

Thus the weakly Bronsted acidic boron zeolites allow acid-catalyzed reactions to be carried out with high selectivity. Gallium substitution gives effective, sulfur-resistant catalysts for the synthesis of aromatics from lower alkanes, without the need for noble metal doping [8], The nonacidic titanium siUcalite exhibits very interesting properties in selective oxidation reactions with H2O2 [T32]. 

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