Direct bandgap

Other studies on Cn-Se where small crystal sizes were measnred and therefore are potential candidates to exhibit size qnantization give crystal sizes between 10 and 20 nm and bandgaps (direct) of ca. 2.2 eV for Cui-j Se and ca. 2.8 eV for CusSei [73,74] a value of 2.37 eV was measured for CD CusSei with a 40-nm crystal size [72]. 

In narrow-bandgap direct semiconductor of the Hgi cCd cTe and InSb type the dominant processes are Auger 1 (CCCH) and Auger 7 (CHHL) (Fig. 1.4). Here, the letters in the notation denote the bands containing the carrier taking part in the Auger process. The first two letters denote the initial state, and the second two the final one. C means the conduction band, H is the heavy holes band, and L is the light holes band. S means the spin split-off band. 

The total generation-recombination rate for narrow-bandgap direct semiconductors in the dark (i.e., without optical generation) is obtained as the sum of the rates for CCCH and CHHL Auger processes, radiative generation-recombination and single-level SR generation-recombination in the form... 

As an example, PL can be used to precisely measure the alloy composition xof a number of direct-gap III-V semiconductor compounds such as Alj Gai j, Inj Gai jfAs, and GaAsjfPj j(, since the band gap is directly related to x. This is possible in extremely thin layers that would be difficult to measure by other techniques. A calibration curve of composition versus band gap is used for quantification. Cooling the sample to cryogenic temperatures can narrow the peaks and enhance the precision. A precision of 1 meV in bandgap peak position corresponds to a value of 0.001 for xin AljfGai j, which may be usefiil for comparative purposes even if it exceeds the accuracy of the x-versus-bandgap calibration. 

Calculations for Ceo in the LDA approximation [62, 60] yield a narrow band (- 0.4 0.6 eV bandwidth) solid, with a HOMO-LUMO-derived direct band gap of - 1.5 eV at the X point of the fee Brillouin zone. The narrow energy bands and the molecular nature of the electronic structure of fullerenes are indicative of a highly correlated electron system. Since the HOMO and LUMO levels both have the same odd parity, electric dipole transitions between these levels are symmetry forbidden in the free Ceo moleeule. In the crystalline solid, transitions between the direct bandgap states at the T and X points in the cubic Brillouin zone arc also forbidden, but are allowed at the lower symmetry points in the Brillouin zone. The allowed electric dipole... 

As the nanotube diameter increases, more wave vectors become allowed for the circumferential direction, the nanotubes become more two-dimensional and the semiconducting band gap disappears, as is illustrated in Fig. 19 which shows the semiconducting band gap to be proportional to the reciprocal diameter l/dt. At a nanotube diameter of dt 3 nm (Fig. 19), the bandgap becomes comparable to thermal energies at room temperature, showing that small diameter nanotubes are needed to observe these quantum effects. Calculation of the electronic structure for two concentric nanotubes shows that pairs of concentric metal-semiconductor or semiconductor-metal nanotubes are stable [178]. 

Although it is required to refine the above condition I in actuality, this rather simple but impressive prediction seems to have much stimulated the experiments on the electrical-conductivity measurement and the related solid-state properties in spite of technological difficulties in purification of the CNT sample and in direct measurement of its electrical conductivity (see Chap. 10). For instance, for MWCNT, a direct conductivity measurement has proved the existence of metallic sample [7]. The electron spin resonance (ESR) (see Chap. 8) [8] and the C nuclear magnetic resonance (NMR) [9] measurements have also proved that MWCNT can show metallic property based on the Pauli susceptibility and Korringa-like relation, respectively. On the other hand, existence of semiconductive MWCNT sample has also been shown by the ESR measurement [ 10], For SWCNT, a combination of direct electrical conductivity and the ESR measurements has confirmed the metallic property of the sample employed therein [11]. More recently, bandgap values of several SWCNT... 

Thin film photovoltaic devices (CdTe is a direct bandgap semiconductor with a bandgap energy of 1.5 eV at room temperature). 

Since IR detector materials are direct bandgap materials (with no change in electron momentum required), they are very efficient absorbers (and emitters) of light - all IR photons are absorbed within the first few /rm of material. The reason that infrared detectors are 10 to 15 ptm thick is for structural and fabrication reasons, not for light absorption reasons. 

The optical properties of a-Si H are of considerable importance, especially for solar-cell applications. Because of the absence of long-range order, the momentum k is not conserved in electronic transitions. Therefore, in contrast to crystalline silicon, a-Si H behaves as though it had a direct bandgap. Its absorption coefficient for visible light is about an order of magnitude higher than that of c-Si [74]. Consequently, the typical thickness (sub-micrometer) of an a-Si H solar cell is only a fraction of that of a c-Si cell. 

Phthalocyanines have attracted particular attention as potential surface modifiers due to their stability and tendency to form ordered structures directed by dispersion forces. They are inherently host-guest structures with a readily interchangeable coordinating metal ion, which in the solid state results in a tunable bandgap. At a surface, in addition to possibly interesting electronic... 

Typical 200 cycle CdSe deposits appears gold in color, as did the CdTe deposits. Given that the bandgaps of CdSe and CdTe are both direct and about 1.6 eV, sim-... 

Direct splitting of water can be accomplished by illuminating two interconnected photoelectrodes, a photoanode, and a photocathode as shown in Figure 7.6. Here, Eg(n) and Eg(p) are, respectively, the bandgaps of the n- and p-type semiconductors and AEp(n) and AEF(p) are, respectively, the differences between the Fermi energies and the conduction band-minimum of the n-type semiconductor bulk and valence band-maximum of the p-type semiconductor bulk. lifb(p) and Utb(n) are, respectively, the flat-band potentials of the p- and n-type semiconductors with the electrolyte. In this case, the sum of the potentials of the electron-hole pairs generated in the two photoelectrodes can be approximated by the following expression ... 

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