Values bandgap

InAs, formed with 200 cycles. There are no indications of As in the XRD. From Figure 25, a plot of the (ahv)2 vs. energy, the bandgap was estimated to be 0.36 eV, in agreement with literature values. Bandgaps for the InAs deposits appear to be sensitive functions of a number of cycle variables. Several samples resulted in band gaps of closer to 0.44 eV. These blue shifts appear to result from smaller crystallites, nanoclusters, when the deposition conditions were not optimal. 

As an example, PL can be used to precisely measure the alloy composition xof a number of direct-gap III-V semiconductor compounds such as Alj Gai j, Inj Gai jfAs, and GaAsjfPj j(, since the band gap is directly related to x. This is possible in extremely thin layers that would be difficult to measure by other techniques. A calibration curve of composition versus band gap is used for quantification. Cooling the sample to cryogenic temperatures can narrow the peaks and enhance the precision. A precision of 1 meV in bandgap peak position corresponds to a value of 0.001 for xin AljfGai j, which may be usefiil for comparative purposes even if it exceeds the accuracy of the x-versus-bandgap calibration. 

Although it is required to refine the above condition I in actuality, this rather simple but impressive prediction seems to have much stimulated the experiments on the electrical-conductivity measurement and the related solid-state properties in spite of technological difficulties in purification of the CNT sample and in direct measurement of its electrical conductivity (see Chap. 10). For instance, for MWCNT, a direct conductivity measurement has proved the existence of metallic sample [7]. The electron spin resonance (ESR) (see Chap. 8) [8] and the C nuclear magnetic resonance (NMR) [9] measurements have also proved that MWCNT can show metallic property based on the Pauli susceptibility and Korringa-like relation, respectively. On the other hand, existence of semiconductive MWCNT sample has also been shown by the ESR measurement [ 10], For SWCNT, a combination of direct electrical conductivity and the ESR measurements has confirmed the metallic property of the sample employed therein [11]. More recently, bandgap values of several SWCNT... 

Changes in the bandgap values depending on these patterns are summarised in Table 1 [16], where it is shown that only armchair-type CNT can have zero bandgap at a certain bond-alternation pattern even if they have not isodistant bond patterns. It should be emphasised that actual bond pattern is decided only by the viewpoints of energetical stabilisation, which cannot be predicted by the Hiickel-type tight-binding calculation. 

Table 1. The bandgap values of CNTs satisfying 2a + b = 3N with various bond-alternation patterns.

As it has been described in various other review articles before, the conversion efficiencies of photovoltaic cells depend on the band gap of the semiconductor used in these systems The maximum efficiency is expected for a bandgap around Eg = 1.3eV. Theoretically, efficiencies up to 30% seem to be possible . Experimental values of 20% as obtained with single crystal solid state devices have been reported " . Since the basic properties are identical for solid/solid junctions and for solid/liquid junctions the same conditions for high efficiencies are valid. Before discussing special problems of electrochemical solar cells the limiting factors in solid photovoltaic cells will be described first. 

A very crude model to calculate the increase in bandgap energy is the effective-mass particle-in-a-box approximation. Assuming parabolic bands and infinitely high barriers the lowest conduction band (CB) level of a quantum wire with a square cross-section of side length w is shifted by AEC compared to the value Ec of the bulk crystal [Lei, Ho3] ... 

---