Recombination Mechanisms in Direct Narrow-Bandgap Semiconductor

4 Recombination Mechanisms in Direct Narrow-Bandgap Semiconductor 

There is a large number of bulk and surface mechanisms determining net generation-recombination rate in semiconductor devices. One of the usual approaches for taking them into account is to include surface recombination processes directly into the expressions for quantum efficiency, while bulk processes are calculated separately (e.g., [12, 13]). 

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The further text shortly considers all of the three main bulk generation-recombination mechanisms in direct narrow-bandgap semiconductors. A unilied g-r term is presented to be utilized in modeling and optimization of photonic IR detectors. In addition to that, some useful approximations are given that may significantly speed up and simplify modeling. 

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