Applications to Thin Films

Hur, S. H. Khang, D. Y. Kocabas, C. Rogers, J. A. 2004. Nanotransfer printing by use of noncovalent surface forces Applications to thin-film transistors that use single-walled carbon nanotube networks and semiconducting polymers. Appl. Phys. Lett. 85 5730-5732. 

DLVO part of stability, application to thin films, particulate systems Coagulation kinetics Phase formation Rheology... 

For application to thin film transistors (TFTs), which can operate electronic papers, high carrier mobility exceeding 0.01 cm2 V-1 s-1 is necessary. For this purpose, nematic semiconductors with low molecular order, resulting in relatively low carrier mobility, are not suitable. For application of thin films of semiconductors to TFTs, stabilization of the highly ordered smectic phases, which exhibit high carrier mobility, by photopolymerization may be desirable. Kreouzis et al. studied the carrier transport properties of photopolymer-izable phenylnaphthalene, diphenylbithiophene, and quaterthiophene derivatives having an oxetane moiety or l,4-pentadien-3-yloxy in their alkyl side chain (Fig. 21) [107,108],... 

Staack, D. (2008), Atmospheric Pressure Microplasmas and Their Application to Thin Film Deposition, PhD. 

Yang, F., Shtein, M., and Forrest, S.R., Morphology control and material mixing by high-temperature organic vapor-phase deposition and its application to thin-film solar cells. Journal of Applied Physics, 2005b. 98 014906. 

The term high-temperature requires definition. In contrast to aqueous corrosion, the temperatures considered in this book will always be high enough that water, when present in the systems, will be present as the vapour rather than the liquid. Moreover, when exposed to oxidizing conditions at temperatures between 100 and 500 °C, most metals and alloys form thin corrosion products that grow very slowly and require transmission electron microscopy for detailed characterizahon. While some principles discussed in this book may be applicable to thin films, high temperature is considered to be 500 °C and above. 

M. Funahasi, Development of liquid-crystalline semiconduchn with high carrier mobilities and their application to thin-film transistors. Polymer J. 41, 459-469 (2009)... 

In this section, an introduction into the most common synchrotron radiation Mossbauer techniques is given emphasizing on the applications to thin films. A detailed elaboration of the methods can be found elsewhere [21,22,38]. 

Rosakis, A. J., Singh, R. B., Tsuji, Y., Kolawa, E. and Moore, N. R. (1998), Full field measurements of curvature using coherent gradient sensing-application to thin-film characterization. Thin Solid Films 325, 42-54. 

Bozano et al. [162] described the electron mobility in MEH-PPV using a field-dependent mobility expression p = pQ ejq)(y x VE). They observed a zero-field mobility (pg) for electrons lower than that for holes, but a higher y. Due to the stronger field dependence of the electron mobility, they observed comparable electron and hole mobilities at working voltages applicable to thin films of MEH-PPV. Both electron and hole mobilities are temperature dependent. 7 is an electric field coefficient to the mobility due to the interaction between charge carriers and randomly distributed permanent dipoles in the semiconducting potymers [162,165]. 

Kim DH, Ohshita J, Kosuge T, Kunugi A, Kunai A (2006) Synthesis of silicon-bridged olig-othiophenes and applications to thin film transistors. Chem Lett 35 266-267... 

Yuh S.-K., Bescher E.P., Babonneau F., Mackenzie J.D. Rare-earth doped, low hydroxyl organically modified silicates. Mater. Res. Soc. Symp. Proc. 1994 346 803-808 Zha C., Atkins G.R., Masters A.F. A spectroscopic study of an anhydrous tetraethyl orthosilicate-boric acid-ethanol system. J. Sol-Gel Sci. Tech. 1998 13 103-107 Zha C., Atkins G.R., Masters A.F. Preparation and spectroscopy of anhydrous borosilicate sols and their application to thin films. J. Non-Cryst. Sohds 1998 242 63-67. 

The physics of surface plasmons propagating along a metal/dielectric interface has been studied intensively, and their fundamental properties have been found to be in good agreement with theoretical concepts based upon the plasma formulation of Maxwell s theory of electromagnetism. The phenomenon has been utilized extensively by physical scientists in studies of the properties of surfaces and thin films. Current interest in the properties of thin surface coatings stems partly from increased applications to thin film devices and, in particular, to recent developments in biosensor devices. This article focuses on the characterization of the surface plasmon resonance phenomenon, with emphasis on the conditions of optical excitation of plasmon resonance and the theoretical analysis of different types of surface resonances. 

Electrochromism can be monitored via standard transmission spectroscopy (transmission-mode electrochromism), applicable to thin films, and to solutions in the very limited cases in which a CP can be prepared at different doping levels in solution. It can also be monitored by reflection spectroscopy (r ectance-mode electrochromism), useful e.g. for IR measurements, or if die final application envisioned is a display device. 

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