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Working voltage

To apply the corrective measures to limit the Ferranti effect it is essential to first study its over voltage (OV) status at the far end of the line. Consider the earlier system TZ of 400 kV 50 Hz and draw a voltage profile as illustrated in Figure 24.17, for the voltages worked out as in equation (24.7), at different lengths of the line. The voltages, for the sake of simplicity, are also shown in Table 24.4. [Pg.792]

By automatic recording of both the emission current and the applied voltage, work functions can be rapidly determined as follows. The electron current in the interval 5 x 10 8 to 2 x 10-7 amps is measured by a do microammeter, the output of which is displayed on a recorder. The potential across a small portion (R in Fig. 43) of the current limiting... [Pg.332]

Figure 4 shows the calibration curve for N2 plotted as log (peak height) vs, log (ppm impurities, by volume). A linear relationship between the amount of gas and the voltage Work done under the aufpices of the U.S. Atomic Energy Commission. [Pg.430]

Obviously authorised persons are in positions of considerable responsibility - they make systems safe for others to work on them and they therefore need to be conscientious and thorough, and these traits are essential elements of their overall competence. Any mistakes can have serious consequences, especially where high voltage work is concerned. There has been a small... [Pg.250]

Nominal Voltage The characteristic operating voltage or rated voltage of or battery (as distinct from MIDPOINT VOLTAGE, WORKING VOLTAGE, etc.)... [Pg.1379]

Blackout problem if the instrument does not properly work, it is difficult to observe intermediate states. Very sophisticated instmmentation is needed to measure voltages, currents or logical levels on the boards of the instrument. [Pg.276]

Figure 3 presents the dependence of the modulus of the e.m.f induced in the pick-up coil, on the distance between the transducer and the discontinuity, obtained both theoretically using the Rel. (6) and experimentally. The working fi equency is 5 kHz. The transducer has been balanced for a material zone far from the discontinuity. The modulus of the output e.m.f of the utilized control equipment was devided by the overall gain of the measuring chain, to directly obtain the transducer output voltage. [Pg.377]

After the time-varying process has finished and the signal has become stabilized twelve-bit ADT connected with common line of SC EDC starts to work. And 5... 10 is later after start ADT gives digital code of input voltage, and this code is recorded into SC EDC memory. [Pg.651]

Figure Bl.26.23. Current-voltage curves observed in the retarding potential difference method of work-fimction Miboxfmeasurement] (Hudson J B 1992 Surface Science (Stoneham, MA Butterworth-Heinemaim)). Figure Bl.26.23. Current-voltage curves observed in the retarding potential difference method of work-fimction Miboxfmeasurement] (Hudson J B 1992 Surface Science (Stoneham, MA Butterworth-Heinemaim)).
When the e.m.f. of a cell is measured by balancing it against an external voltage, so that no current flows, the maximum e.m.f. is obtained since the cell is at equilibrium. The maximum work obtainable from the cell is then nFE J, where n is the number of electrons transferred, F is the Faraday unit and E is the maximum cell e.m.f. We saw in Chapter 3 that the maximum amount of work obtainable from a reaction is given by the free energy change, i.e. - AG. Hence... [Pg.102]

The plasma source implantation system does not use the extraction and acceleration scheme found in traditional mass-analy2ing implanters, but rather the sample to be implanted is placed inside a plasma (Fig. 4). This ion implantation scheme evolved from work on controlled fusion devices. The sample is repetitively pulsed at high negative voltages (around 100 kV) to envelope the surface with a flux of energetic plasma ions. Because the plasma surrounds the sample, and because the ions are accelerated normal to the sample surface, plasma-source implantation occurs over the entire surface, thereby eliminating the need to manipulate nonplanar samples in front of the ion beam. In this article, ion implantation systems that implant all surfaces simultaneously are referred to as omnidirectional systems. [Pg.391]


See other pages where Working voltage is mentioned: [Pg.165]    [Pg.272]    [Pg.165]    [Pg.60]    [Pg.127]    [Pg.51]    [Pg.2920]    [Pg.225]    [Pg.754]    [Pg.194]    [Pg.251]    [Pg.4]    [Pg.404]    [Pg.165]    [Pg.272]    [Pg.165]    [Pg.60]    [Pg.127]    [Pg.51]    [Pg.2920]    [Pg.225]    [Pg.754]    [Pg.194]    [Pg.251]    [Pg.4]    [Pg.404]    [Pg.288]    [Pg.301]    [Pg.318]    [Pg.390]    [Pg.431]    [Pg.513]    [Pg.201]    [Pg.301]    [Pg.738]    [Pg.307]    [Pg.820]    [Pg.1642]    [Pg.1894]    [Pg.1894]    [Pg.464]    [Pg.127]    [Pg.277]    [Pg.322]    [Pg.421]    [Pg.243]    [Pg.342]    [Pg.127]    [Pg.118]    [Pg.137]    [Pg.138]    [Pg.424]    [Pg.425]   
See also in sourсe #XX -- [ Pg.2 , Pg.3 ]




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