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Thin films characterization

Pilling-Bedworth ratio of 1 96, anatase phase films can show cracks and fissures with, consequendy, a loss of mechanical stability, however a hydrogen reduction treatment above 600°C leads to phase transition from anatase (101) to rutile (110) [43] with XRD detecting TiH2 upon prolonged hydrogen treatment of titania. As shown in Fig. 4.4, introduction of vanadium increases the intensity of the anatase Ti02 peak above 700°C disappearance of the vanadium (001) peak and the simultaneous appearance of the rutile (110) peak are observed, but anatase continues to dominate even after heat treatment at 800° C. A sharp vanadium (001) peak is observed for heat treatments carried out in air, while no vanadium peak has been seen in the case of heat treatment at 600°C in presence of Ar/H2. [Pg.213]

Ta1)lc 4.4 Photocuircnt-Potcnlial data oFaoUgicI derived Ti02 ihin film pliotoanodc at difTcrent film thicknesses [57]. [Pg.214]


Vol. 144. Surface-Launched Acoustic Wave Sensors Chemical Sensing and Thin-Film Characterization. By Michael Thompson and David Stone... [Pg.450]

Ham D, Mishra KK, Rajeshwar K (1991) Anodic electrosynthesis of cadmium selenide thin films. Characterization and comparison with the passive/transpassive behavior of the CdX (X = S, Te) counterparts. J Electrochem Soc 138 100-108 Stimming U (1985) Photoelectrochemical studies of passive films (Review Article). Electrochim Acta 31 ... [Pg.141]

Macrocyclic Compounds in Analytical Chemistry. Edited by Yury A. Zolotov Surface-Launched Acoustic Wave Sensors Chemical Sensing and Thin-Film Characterization. By Michael Thompson and David Stone Modern Isotope Ratio Mass Spectrometry. Edited by T. J. Platzner High Performance Capillary Electrophoresis Theory, Techniques, and Applications. Edited by Morteza G. Khaledi... [Pg.654]

W. Husinsky and G. Betz. Fundamental Aspects of SNMS for Thin Film Characterization Experimental Studies and Computer Simulations. Thin Solid Films, 272(1996) 289-309. [Pg.77]

Kushibiki, J., Chubachi, N., and Tejima, E. (1989). Quantitative evaluation of materials by directional acoustic microscope. Ultrasonics Int. 89, 736-43. [56, 149, 250] Kushibiki, J., Ishikawa, T., and Chubachi, N. (1990). Cut-off characteristics of leaky Sezawa and pseudo-Sezawa wave modes for thin-film characterization. Appl. Phys. Lett. 57,1967-9. [216]... [Pg.336]

Thompson M, Stone DC (1997) Surface-launched acoustic wave sensors chemical sensing and thin-film characterization. Wiley, New York... [Pg.262]

Pyroelectric Ceramics and Thin Films Characterization, Properties and Selection... [Pg.222]

The contributions of this volume were presented at the meeting and selected for publication in Progress in Colloid and Polymer Science covering a representative spectrum of surface sensitive techniques and their application to polymer surface and thin film characterization as well as recent examples of technologically relevant materials and process development. [Pg.5]

Acoustic wave (AW) devices are ideally suited to thin film characterization due to their extreme sensitivity to thin film properties [10]. The sensitivity of AW devices to a variety of film properties (see Chapter 3), such as mass density, viscoelasticity and conductivity, makes them versatile characterization tools. The ability to rapidly monitor changes in device responses resulting from changes in thin film properties permits their use for monitoring dynamic processes such as film deposition, chemical modification (e.g., photo-polymerization, corrosion), and diffusion of species into and out of films. [Pg.151]

The development of AW thin-film characterization techniques has occurred largely because of the interest by various research groups in developing chemical sensors based on coated AW devices (see Chapter 5). Thus, many of the film characterization techniques described here were developed in an effort to characterize sensor coatings or to interpret the observed responses from AW chemical sensors in operation. [Pg.151]

In conclusion, the results presented in this chapter demonstrate the extreme versatility of AW devices for the characterization of materials. The inherent sensitivity of AW properties to the mechanical and electrical properties of thin films can be used to advantage to directly monitor a wide variety of film properties. Since the properties and behavior of thin-film materials can be very different from those of similar bulk materials, this ability to directly measure thin film properties can be a significant advantage in materials research and development. The ability to use thin films instead of bulk samples has the added advantage that the time required to perform an evaluation of dynamic processes such as diffusion and corrosion can be greatly decreased. The number of applications of AW devices to thin-film characterization continues to increase, and is limited only by the ingenuity of AW device researchers and developers. [Pg.212]

Depth profiling techniques applied to thermodynamically equilibrated thin films characterize the compositions of coexisting phases and the spatial extent of the separating interface. This procedure repeated at different temperatures yields the coexistence curve and the corresponding temperature variation of the interfacial width. Determined coexistence curves are well described by the mean field theory with composition-dependent bulk interaction parameter [74]. The same interaction parameter also seems to generate the interfacial widths in accordance with results presented here [107] (Sect. 2.2.2) and elsewhere [88, 96, 129]. These predictions may however need to be aided by capillary wave contributions to fit another observations [95, 97, 98], especially those tracing the change of the interfacial width with film thickness [121,130] (see Sect. 3.2.2). [Pg.34]

These two approximations are what characterizes the kinematic approach to diffraction and make it possible to describe the effect in a relatively simple way. The dynamic theory [AUT 05] takes both of these effects into account. The implementation of this dynamic theory is necessary when studying diffraction by very high qtrality single crystals, or also in the field of homoepitxial thin film characterization. These two subjects are beyond the scope of this book and therefore from here on, we will apply the kinematic theory of X-ray diffraction. [Pg.17]


See other pages where Thin films characterization is mentioned: [Pg.198]    [Pg.203]    [Pg.212]    [Pg.310]    [Pg.321]    [Pg.108]    [Pg.111]    [Pg.112]    [Pg.63]    [Pg.108]    [Pg.212]    [Pg.13]    [Pg.205]    [Pg.183]    [Pg.78]    [Pg.369]    [Pg.194]    [Pg.104]   
See also in sourсe #XX -- [ Pg.275 , Pg.278 ]

See also in sourсe #XX -- [ Pg.212 , Pg.213 , Pg.214 ]




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