Annealing substrate

Fig. 14.5. Schematic illustration of the graphoepitaxial effect of YBCO film growth on MgO and Y—Zr02 substrates. The [IOOJybco and the [OIOJybco align with the crystallographic ledges which form on annealed substrate surfaces. The ledges are parallel to the (100) direction on MgO and to (110) on Y—Zr02-...

Figure Bl.24.11. The backscattering yield from an Si sample tiiat has been implanted with Si atoms to fonn an amorphous layer. Upon annealing this amorphous layer reerystallizes epitaxially leading to a shift in the amorphous/single-erystal interfaee towards the surfaee. The aligned speetra have a step between the amorphous and erystal substrate whieh shifts towards the surfaee as the amorphous layer epitaxially reerystallizes on the Si.

The contact between the aluminium layers and the ceramic substrate requires a joining material which will wet both metal and ceramic, and solders such as the conventional Pb-Sn alloy have been used which are molten during the annealing process. The contact between the solder and the aluminium layer is frequently unsatisfactoty because of the intervention of the AI2O3 layer, and a practical solution appears to be to place drree layers of metal clrromium in contact widr the aluminium, copper in contact with the clrromium, and gold between the copper layer and the solder. 

DS Goodsell, AJ Olson. Automated docking of substrates to proteins by simulated annealing. Proteins Struct Funct Genet 8 195-202, 1990. 

When films were deposited on aluminum substrates and then annealed at 180°C for 30 min, the bands near 3360 and 940 cm decreased significantly in intensity, indicating that adjacent hydroxyl groups condensed to form Si-O-Si linkages, increasing crosslinking in the films [15]. The band near 3650 cm did not... 

Fig. 14. RAIR spectra of a plasma polymerized silica-like film deposited onto a polished aluminum substrate (A) before and (B) after annealing at ISO C for 30 min. Film thickness was about 735 A. Reprinted by permission of Gordon and Breach Science Publishers from Ref. [15].

The uniform growth of PCNTs generally requires the partial pressure of benzene to be as low as possible. Following a 1 h retention time, the chamber is cooled to room temperature and the H2 atmosphere is replaced by Ar. The product, deposited on the substrate is collected and then annealed at 2000-3000°C under Ar... 

Fig. 12.15 Porosity caused by a cold-worked substrate. Left (EQE 76) cold-rolled steel as received centre (EDE 52) steel bright-annealed in vacuum before plating, 2 5 h at 700°C right, annealed steel, further cold-rolled (0-914 mm to 0-864 mm) produces porosity again. No steel was removed from the surface 5 /rm tin-nickel electrodeptosit...

Figure 16-29. Polnri/.cd-lighl oplicnl micrographs of i [hill (200 mil) rilm of Oocl-OPVS vucuuin-dcposilcd oiilo a glass substrate. A as-deposited li annealed lor 5 min al 120 C C oblained after slow cooling horn ihc isotropic niell al 210 C. Seale bar 100 pm.

Whereas XRD patterns of the thin crystalline films provide information on the orientation and lattice distances perpendicular to the substrate, AFM has proven to be a powerful technique for obtaining structural information of thin-lilm surfaces of conjugated materials 195 j. AFM imaging of the surface of a thin (10 nm) annealed film of Ooct-OFV5 confirmed the domain structure of the annealed Ooct-... 

For this study, thin films were deposited onto glass substrates. The as-deposited films showed no spectral narrowing at any pump energy up to the damage threshold. Stimulated emission was observed only in annealed films. The spol-to-spot reproducibiliiy of the measured characteristics was good, and we could measure with excitation energies of up to 4 mJ (1.8 mm beam diameter) without visual damage of the illuminated spot. 

The substituted five-ring OPVs have been processed into poly crystal line thin films by vacuum deposition onto a substrate from the vapor phase. Optical absorption and photolumincscence of the films are significantly different from dilute solution spectra, which indicates that intermolecular interactions play an important role in the solid-state spectra. The molecular orientation and crystal domain size can be increased by thermal annealing of the films. This control of the microstruc-ture is essential for the use of such films in photonic devices. 

Fig. 10. X-ray reflectivity curves of polystyrene (PS)/poly-p-bromostyrene (PBrS) on a glass substrate before (solid line) and after annealing for 13 h at 130 °C (dashed tine) [191]. The width of the interface changes from 1.3 nm to 2.0 nm due to interfacial mixing of components. The X-ray wavelength is 0.154 nm and films have a thickness of 37.8 nm (PS) and 45.0 nm (PBrS), respectively...

It is likely that the answers to these questions will come only from more selective and sophisticated experiments than have been done hitherto, although some useful directions have been established. The use of high-sensitivity electron spin resonance for the study in situ of anticipated radical species will likely be possible, if the background signals from other radiation-produced species are not too intense. Studies of the chemistry of implanted atoms and ions in solid organometallic substrates will make it possible to start with totally unbound atoms which suffer no Auger ionization and thus to simulate the extreme of the total recoil. Careful studies of the thermal annealing effects, especially in the presence of reactive atmospheres, will... 

Amorphous films of the (Zn,Fe)S semiconductor have been obtained by electrodeposition on TO substrates from a diethylene glycol solution containing Ss, FeCl2, and ZnCl2 reagents [102]. The films were annealed at 285 °C in argon to give sphalerite and pyrrhotite (Zn,Fe)S phases. A direct relationship was observed... 

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