I-V characteristics measurements

Figure IV 2 8. The set up (top insert) and the set of the I-V characteristics measured in the flux-flow regime with field B applied along the b-axis, B increasing from 0.85 T up to 1.5 T...

Phonon-assisted tunneling model is applied for explication of temperature-dependent I-V characteristics measured by other authors for (Bii-xSbs)2Te3 and ZnSn03 nanowires. The fit of exper imental data of the current dependence on applied volta measured at different temperatures with two theories of phonon-assisted tunnelling explains well the variation of I-V curves with temperature as well as the temperature dependence of conductivity of nanowire. 

Fig. 8.9. (a) Schematic cross section of the device structure (not to scale) showing the gate electrode integrated into the microfluidic channel, (b) Typical I-V characteristics measured with 10 mM Tris-Cl buffer solution flowing across the PEDOT PSS transistor at 0.1 pi min-1. Reprinted with permission from [33]. Copyright 2005 American Institute of Physics... 

The power requirements for the sensors were very low, which is a key requirement for a competitive, marketable sensor. Figure 5.31 shows the I-V characteristics measured at 25°C in both a pure N2 ambient and after 15 minutes in a 500 ppm Hj in Nj ambient. Under these conditions, the resistance response is 8% and is achieved for a power requirement of only 0.4 mW. This compares well with competing technologies for hydrogen detection, such as Pd-loaded carbon nanotubes (Lu et al, 2004 Sayago et aL, 2005). 

Fig. 6.12. Conductance, G, plotted against gate voltage, Vg, for a single nanocrystal transistor measured at T = 4.2 K. The conductance shows a peak when the charge state of the nanocrystal changes by one electron. The dots are the measured values the solid curve is a fit to the data by using the standard Coulomb blockade model with a temperature T = 5 K. Insets show the I- V characteristics measured at the gate voltages indicated (reproduced with permission from (946))...

Figure 5. Measurement and analysis of steady-state i— V characteristics, (a) Following subtraction of ohmic losses (determined from impedance or current-interrupt measurements), the electrode overpotential rj is plotted vs ln(i). For systems governed by classic electrochemical kinetics, the slope at high overpotential yields anodic and cathodic transfer coefficients (Ua and aj while the intercept yields the exchange current density (i o). These parameters can be used in an empirical rate expression for the kinetics (Butler—Volmer equation) or related to more specific parameters associated with individual reaction steps.(b) Example of Mn(IV) reduction to Mn(III) at a Pt electrode in 7.5 M H2SO4 solution at 25 Below limiting current the system obeys Tafel kinetics with Ua 1/4. Data are from ref 363. (Reprinted with permission from ref 362. Copyright 2001 John Wiley Sons.)...

Fig. 10 (a) Schematic representation of the I-V measurement of the Cgo derivative based molecular rectifier, (b) I-V characteristics of the Langmuir-Blodgett film of the fullerene penta-pod showing current rectification at bias voltage of 1.0 V measured at different junction positions, with high rectification ratios (RR) registered at each junction. (Reprinted with permission from [98])... 

Electrical Measurements. Dielectric and I-V characteristics were determined on simple guard ring-dot MIS structures consisting of A1 - polyimide - degenerate silicon of resistivity 0 -. 02 ficm. 

Figure 12a Critical current of a Y-Ba-Cu-O film measured using 10 /xV criterion as a function of temperature in magnetic fields of (from the right) 0.1, 5, 10, and 14 Tesla. The normal state region (I), fully superconducting state (III) and low resistance ohmic state (II) are indicated. The inset shows I-V characteristics of these three regions (III) region has been expanded by a factor 2000. Ref. 37.

From the measured I-V characteristics of the test element group, presented in GB-A-2246662 above, only the presence or absence of the pn-junction in the light responsive region is detected Even if a photo-detector has insufficient spatial resolution caused by the excessive diffusion length of the minority charge carrier in the semiconductor layer in which the pn-junctions are formed, the insufficient space resolution is not detected from the I-V characteristics of the test element group, and this photo-detector is selected as a non-defective. 

Kushmerick and coworkers [40-42, 70] developed an elegant way to sandwich around 1000 molecules in a molecular junction. An Au wire with a diameter of 10 [tm was modified with a SAM of the molecules of interest. The SAM-covered wire was brought into the vicinity of a second 10 im diameter wire in a crossed-wire geometry (Fig. 10.9). A molecular junction was formed by applying a small d.c. current across the first wire in a magnetic field, which caused the wire to deflect. Upon touching the other wire, the I(V) characteristics of the molecular junction could be measured. 

The i-v sampling technique used here provides a real-time oscilloscope display of the i-v characteristics. This allows us to measure both amplitude and phase of the medium impedance at a.c. steady state. It also allows us to monitor the build-up phenomenon as well as the continuous variation of the i waveform when f or V is swept. 

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