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Amplifier schematic

Figure 6.9 shows a cutaway representation of a typical klystron amplifier. Schematically it is very similar to a triode tube in that it includes an electron source, resonant circuits, and a collector (which is roughly equivalent to the plate of a triode). In fact, the klystron amplifier consists of three separate sections—the electron gun for beam generation, the RF section for beam interaction, and the collector section for electron energy dissipation. [Pg.483]

FIGURE 7.81 Noninverting amplifier schematic incorporating the op-amp model shown in Fig. 7.80(b). [Pg.625]

FIGURE 7.87 (a) Inverting amplifier whose output impedance is to be found, (b) Amplifier schematic prepared for analysis. [Pg.629]

Figure Bl.10.2. Schematic diagram of a counting experiment. The detector intercepts signals from the source. The output of the detector is amplified by a preamplifier and then shaped and amplified friitlier by an amplifier. The discriminator has variable lower and upper level tliresholds. If a signal from the amplifier exceeds tlie lower tlireshold while remaming below the upper tlireshold, a pulse is produced that can be registered by a preprogrammed counter. The contents of the counter can be periodically transferred to an online storage device for fiirther processing and analysis. The pulse shapes produced by each of the devices are shown schematically above tlieni. Figure Bl.10.2. Schematic diagram of a counting experiment. The detector intercepts signals from the source. The output of the detector is amplified by a preamplifier and then shaped and amplified friitlier by an amplifier. The discriminator has variable lower and upper level tliresholds. If a signal from the amplifier exceeds tlie lower tlireshold while remaming below the upper tlireshold, a pulse is produced that can be registered by a preprogrammed counter. The contents of the counter can be periodically transferred to an online storage device for fiirther processing and analysis. The pulse shapes produced by each of the devices are shown schematically above tlieni.
Figure C3.5.3. Schematic diagram of apparatus used for (a) IR pump-probe or vibrational echo spectroscopy by Payer and co-workers [50] and (b) IR-Raman spectroscopy by Dlott and co-workers [39]. Key OPA = optical parametric amplifier PEL = free-electron laser MOD = high speed optical modulator PMT = photomultiplier OMA = optical multichannel analyser. Figure C3.5.3. Schematic diagram of apparatus used for (a) IR pump-probe or vibrational echo spectroscopy by Payer and co-workers [50] and (b) IR-Raman spectroscopy by Dlott and co-workers [39]. Key OPA = optical parametric amplifier PEL = free-electron laser MOD = high speed optical modulator PMT = photomultiplier OMA = optical multichannel analyser.
Flame Ionization Detector Combustion of an organic compound in an Hz/air flame results in a flame rich in electrons and ions. If a potential of approximately 300 V is applied across the flame, a small current of roughly 10 -10 A develops. When amplified, this current provides a useful analytical signal. This is the basis of the popular flame ionization detector (FID), a schematic of which is shown in Figure 12.22. [Pg.570]

Schematic diagram of a flame ionization detector. Ions and electrons formed in the flame provide an electrically conducting path between the flame at earth potential and an insulated cylindrical metal electrode at high potential. surrounding the flame the flow of current is monitored, amplified, and passed to the recording system. Schematic diagram of a flame ionization detector. Ions and electrons formed in the flame provide an electrically conducting path between the flame at earth potential and an insulated cylindrical metal electrode at high potential. surrounding the flame the flow of current is monitored, amplified, and passed to the recording system.
Figure H-7 is the schematic of a basic I/P transducer. The transducer shovvm is characterized bv (1) an input conversion that generates an angular displacement of the beam proportional to the input current, (2) a pneumatic amplifier stage that converts the resulting angii-... Figure H-7 is the schematic of a basic I/P transducer. The transducer shovvm is characterized bv (1) an input conversion that generates an angular displacement of the beam proportional to the input current, (2) a pneumatic amplifier stage that converts the resulting angii-...
This completes the design of the feedback loop compensation elements, and the error amplifier curves and the overall plots are also included in Figure 3-66. This also completes the design of the major portions of the switching power supply. The schematic is shown in Figure 3-67. [Pg.112]

Fig. 5.5. Schematic view of the deflection sensing system as used in the NanoScope III AFM (Digital Instruments, Santa Barbara, CA, USA). The deflection ofthe cantilever is amplified by a laser beam focused on the rear ofthe cantilever and reflected towards a split photodiode detector. Fig. 5.5. Schematic view of the deflection sensing system as used in the NanoScope III AFM (Digital Instruments, Santa Barbara, CA, USA). The deflection ofthe cantilever is amplified by a laser beam focused on the rear ofthe cantilever and reflected towards a split photodiode detector.
A transistor, or n-p-n junction, is built up of two n-type regions of Si separated by a thin layer of weakly p-type (Fig. e). When the emitter is biased by a small voltage in the forward direction and the collector by a larger voltage in the reverse direction, this device acts as a triode amplifier. The relevant energy level diagram is shown schematically in Fig. f... [Pg.332]

Figure 4. Simplified schematic of an optical/infrared focal plane array. The detector is a thin wafer of light sensitive material that is connected to a thin layer of solid state electronics - the connection is made either by direct deposition (CCD) or bump bonding (IR detector). The solid state electronics amplify and read out the charge produced by the incident light. Figure 4. Simplified schematic of an optical/infrared focal plane array. The detector is a thin wafer of light sensitive material that is connected to a thin layer of solid state electronics - the connection is made either by direct deposition (CCD) or bump bonding (IR detector). The solid state electronics amplify and read out the charge produced by the incident light.
The basic experimental arrangements for photocurrent measurements under periodic square and sinusoidal light perturbation are schematically depicted in Fig. 19. In the previous section, we have already discussed experimental results based on chopped light and lock-in detection. This approach is particularly useful for measurement at a single frequency, generally above 5 Hz. At lower frequencies the performance of lock-in amplifier and mechanical choppers diminishes considerably. For rather slow dynamics, DC photocurrent transients employing optical shutters are more advisable. On the other hand, for kinetic studies of the various reaction steps under illumination, intensity modulated photocurrent spectroscopy (IMPS) has proved to be a very powerful approach [132,133,148-156]. For IMPS, the applied potential is kept constant and the light intensity is sinusoid-... [Pg.221]

FIG. 3 (a) Block schematic of the typical instrumentation for SECM with an amperometric UME tip. The tip position may be controlled with various micropositioners, as outlined in the text. The tip potential is applied, with respect to a reference electrode, using a potential programmer, and the current is measured with a simple amplifier device. The tip position may be viewed using a video microscope, (b) Schematic of the submarine UME configuration, which facilitates interfacial electrochemical measurements when the phase containing the UME is more dense than the second phase. In this case, the glass capillary is attached to suitable micropositioners and electrical contact is made via the insulated copper wire shown. [Pg.294]

Figure 3.5. A simple schematic diagram of the basic components of a typical two-pulse picosecond TR experimental apparatus based on a TiiSapphire oscillator/amplifier laser system. See text for more details... Figure 3.5. A simple schematic diagram of the basic components of a typical two-pulse picosecond TR experimental apparatus based on a TiiSapphire oscillator/amplifier laser system. See text for more details...
Figure 1 Schematic diagrams illustrating the patch-clamp technique. (A) Overall setup for isolating single ionic channels in an intact patch of cell membrane. P = patch pipet R = reference microelectrode I = intracellular microelectrode Vp = applied patch potential Em = membrane potential Vm = Em — Vp = potential across the patch A = patch-clamp amplifier. (From Ref. 90.) (B) Five different recording configurations, and procedures used to establish them, (i) Cell attached or intact patch (ii) open cell attached patch (iii) whole cell recording (iv) excised outside-out patch (v) excised inside-out patch. Key i = inside of the cell o = outside of the cell. (Adapted from Ref. 283.)... Figure 1 Schematic diagrams illustrating the patch-clamp technique. (A) Overall setup for isolating single ionic channels in an intact patch of cell membrane. P = patch pipet R = reference microelectrode I = intracellular microelectrode Vp = applied patch potential Em = membrane potential Vm = Em — Vp = potential across the patch A = patch-clamp amplifier. (From Ref. 90.) (B) Five different recording configurations, and procedures used to establish them, (i) Cell attached or intact patch (ii) open cell attached patch (iii) whole cell recording (iv) excised outside-out patch (v) excised inside-out patch. Key i = inside of the cell o = outside of the cell. (Adapted from Ref. 283.)...
Figure 6.14 Schematic representation of the scoring system the example illustrated uses the Reference Center set of HER2/Chl7 ratios obtained for the SK-BR3 cell line at Run 4. In this case the lowest ratio obtained by a Reference Center was 3.19, and the highest was 4.10 participants submitting ratios within this range were judged to have achieved an appropriate result (score = 3). The lower cutoff for acceptable ratios (score = 2) was calculated as 3.19 minus 10% of 3.19, that is 2.87 and the upper cutoff was calculated as 4.10 plus 10% of 4.10, that is 4.51. Participants who submitted ratios outside these 10% cutoffs were judged to have achieved an inappropriate result and received a score of 1. Except in the case of the MDA-MB-453 cell line, misdiagnosis (amplified reported as nonamplified, and vice versa) resulted in a score of 0. Superscript notation and abbreviation used in figure Does not apply to results obtained for MDA-MB-453 cell line RC, Reference Center. See color insert. Figure 6.14 Schematic representation of the scoring system the example illustrated uses the Reference Center set of HER2/Chl7 ratios obtained for the SK-BR3 cell line at Run 4. In this case the lowest ratio obtained by a Reference Center was 3.19, and the highest was 4.10 participants submitting ratios within this range were judged to have achieved an appropriate result (score = 3). The lower cutoff for acceptable ratios (score = 2) was calculated as 3.19 minus 10% of 3.19, that is 2.87 and the upper cutoff was calculated as 4.10 plus 10% of 4.10, that is 4.51. Participants who submitted ratios outside these 10% cutoffs were judged to have achieved an inappropriate result and received a score of 1. Except in the case of the MDA-MB-453 cell line, misdiagnosis (amplified reported as nonamplified, and vice versa) resulted in a score of 0. Superscript notation and abbreviation used in figure Does not apply to results obtained for MDA-MB-453 cell line RC, Reference Center. See color insert.
In fact, with few exceptions [24], the resistance of TES is very low and the matching to a conventional FET amplifier is impossible. A SQUID amplifier (see Section 14.5) coupled to the TES by a superconducting transformer is the natural solution as schematically shown in Fig. 15.4. [Pg.329]

Methodology appropriate for the measuring of DTA profiles has been extensively reviewed [12,13]. A schematic diagram illustrating the essential aspects of the DTA technique is shown in Fig. 3. Both the sample and reference materials are contained within the same furnace, whose temperature program is externally controlled. The outputs of the sensing thermocouples are amplified, electronically subtracted, and finally shown on a suitable display device. [Pg.228]

Scheme 10 Schematic illustration of the CCP-amplified NP-based fluoroimmunoassay... Scheme 10 Schematic illustration of the CCP-amplified NP-based fluoroimmunoassay...

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