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Amorphous thin-film-transistors

Fig. 4. Some electronic device applications using amorphous silicon (a) solar cell, (b) thin-fiLm transistor, (c) image sensor, and (d) nuclear particle detector. Fig. 4. Some electronic device applications using amorphous silicon (a) solar cell, (b) thin-fiLm transistor, (c) image sensor, and (d) nuclear particle detector.
As described earlier, the covalently bonded hydrogen, by passivating dangling bond defects and removing strained weak Si—Si bonds from the network, dramatically improves the semiconducting quality of amorphous silicon. Hence without the presence of hydrogen, effective amorphous semiconductor devices such as solar cells or thin film transistors would not be possible. Unfortunately, low defect density, high electronic quality... [Pg.409]

Kuo, Y. (Editor). 2004. Thin-Film Transistors Materials and Processes, Amorphous Silicon Thin-Film Transistors, Polycrystalline Silicon Thin Transistors. Kluwer, New York. [Pg.29]

Chiang, H. Q. Wager, J. F. Hoffman, R. L. Jeong, J. Keszler, D. A. 2005. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86 013503/1-013503/3. [Pg.127]

Yabuta, H. Sano, M. Abe, K. Aiba, T. Den, T. Kumomi, H. Nomura, K. Kamiya, T. Hosono, H. 2006. High-mobility thin-film transistor with amorphous InGaZn04 channel fabricated by room temperature rf-magnetron sputtering. Appl. Phys. Lett. 89 112123/1-112123/3. [Pg.127]

Nomura, K. Ohta, H. Takagi, A. Kamiya, T. Hirano, M. Hosono, H. 2004. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432 488-492. [Pg.129]

Hong, C. Wagner, S. 2000. Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors. IEEE Electron Dev. Lett. 21 384-386. [Pg.405]

MJ Powell, C van Berkel, and JR Hughes, Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors, Appl. Phys. Lett., 54 1323-1325, 1989. [Pg.563]

Amorphous Silicon Thin-Film Transistor Active-Matrix Organic Light-Emitting Displays... [Pg.583]

J. Kanicki and S. Martin, Hydrogenated amorphous silicon thin-film transistors, in Thin-Film Transistors, C.R. Kagan and P. Andry, Eds., Marcel Dekker, New York, 2003. [Pg.616]

J.-H. Kim and J. Kanicki, Amorphous silicon thin-film transistors-based active-matrix organic light-emitting displays, SID Tech. Dig., 614—617, 2002. [Pg.616]

Y. Hong, J.-Y. Nahm, and J. Kanicki, Opto-electrical properties of 200 dpi four amorphous silicon thin-film transistors active-matrix organic polymer light-emitting display, Appl. Phys. Lett., 83, 3233-3235, 2003. [Pg.616]

Thin-film transistors (TFTs), 22 222 in displays, 22 259 hydrogenated amorphous silicon in, 22 135, 136, 138-139 Thin-layer chromatography (tic), 6 384, 9 233-234... [Pg.945]

Thin film transistors (TFTs) based systems are much better for colour displays since they give better viewing angles, response times and resolution than STNs. Those systems in which an array of amorphous siUcon transistors is vapour-deposited onto one side of the substrate, each transistor being positioned below each pixel, are known as active matrix TFT (AMTFT) displays. [Pg.308]


See other pages where Amorphous thin-film-transistors is mentioned: [Pg.354]    [Pg.249]    [Pg.563]    [Pg.570]    [Pg.212]    [Pg.397]    [Pg.77]    [Pg.132]    [Pg.366]    [Pg.584]    [Pg.360]    [Pg.382]   
See also in sourсe #XX -- [ Pg.327 , Pg.328 ]




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