Very large-scaled integration

Selective deposition, via plugs and gate electrodes for very large scale integrated circuits (VLSI). 

A.K. Stamper and S.L. Pennington. Characterization of Plasma-Enhanced Chemical Vapor Deposited Nitride Films Used in Very Large Scale Integrated Apphcations , Journal of... 

Polyimide for Multilevel Very Large-Scale Integration (VLSI)... 

Fig. 1. Technological trends A, components per chip B, minimum feature length , metal oxide semiconductor (MOS) memory A, bipolar memory H MOS logic D, bipolar logic. The designations SSI, MSI, LSI, and VLSI stand for small-, medium-, large-, and very large-scale integration, respectively.

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

Oxidation and diffusion continue to be important in submicrometer VLSI (very-large-scale integration) technology. Modem integrated devices require... 

Excess Point Defects and Low-Thermal-Budget Annealing. Submicrometer VLSI (very-large-scale integration) technologies require low thermal budgets (the product of dopant diffusivity and diffusion time) to limit the diffusional motion of dopants. Two options exist to reduce the thermal... 

Planar or Parallel-Plate Reactor. Because very-large-scale integration (VLSI) demands nearly vertical etch profiles, planar or parallel-plate... 

This chapter gives explicit examples of how the techniques of wet (solution) chemistry can be applied to the production of integrated circuits. The quality control for processed thin films, chemicals, and pure water, along with microcontamination analysis, to resolve production problems are discussed. These examples indicate that wet chemical techniques are the only ones available for absolute standardization and measurement of trace metals and their effect on the devices produced by current very-large-scale-integration (VLSI) technology. 

Note These specifications were developed at Balazs Analytical Laboratory. Abbreviations are defined as follows DRAM, dynamic random access memory VLSI, very-large-scale integration ULSI, ultralarge-scale integration TOC, total oxidizable carbon THM, trihalomethane SEM, scanning electron microscopy and EPI, epifluorescence... 

Additive processes ion implantation, 361 metal layer deposition, 361 resist requirement, 361 vapor dopant diffusion, 361 Additives for F scavenging, 415 Advanced very-large-scale integrated-circuit package, 490, 492 Aluminum... 

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