Deep ultraviolet lithography

M.W. Horn, S.W. Pang, and M. Rothschild, Plasma deposited organosilicon thin films as dry resists for deep ultraviolet lithography, J. Vac. Sci. Technol. B 8, 1493 (1990). 

Y. TaM, Film structure and optical constants of magnetron-sputtered fluoride films for deep ultraviolet lithography. Vacuum, 74, 431 35 (2004). 

One of the methods under development at AT T Bell Laboratories for submicron lithography is deep ultraviolet projection photolithography. (O Fine line definition is obtained by use of 248 nm light and a lens of large numerical aperture. Because of the large chromatic aberration of the quartz lens a spectrally line-narrowed krypton fluoride excimer laser is used as a light source. 

Firtion, V. A. Jewell, T. E. Wilcomb, B. E. Clemens, J. T. Excimer Laser-Based Lithography A Deep Ultraviolet Wafer Stepper SPIE Conf. on Microlithography, March 13, 1986. 

The concept of a "minimum feature size is also important in fabrication of microdevices its actual dimensions are determined by the choice of fabrication process. As discussed below, conventional photolithography (405 or 436 nm) is generally limited to features of approximately 1 pm. Deep ultraviolet (UV) (230 to 260 nm) lithography has a minimum feature size of 0.3 pm, and x-ray and e-beam can be used to generate features as small as 0.1pm. 

Pol, High resolution optical lithography a deep ultraviolet laser based wafer stepper, Solid State Technol. 30(1), 71 76 (1987). 

Deep-Ultraviolet Chemically Amplified Resists Based on Acid Catalysis. Unfortunately DNQ-novolac resists are not suitable for use at deep-ultraviolet (DUV) wavelengths (A, 250 nm), the succeeding evolutionary step in the progression of optical lithography tools to higher resolution. There are two principal reasons for this. The first can best be understood by consideration of... 

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