Krypton fluoride excimer laser

A typical example might involve use of a krypton fluoride excimer laser operating at 249 nm with a pulse duration around 100 nanoseconds and a pulse repetition rate which can be varied up to 200 Hz. For metal deposition, energy densities in the range from 0.1 to 1 J/cm per pulse are typical. 

Laser Flash Photolysis at 248 nm of TDI-PU. MDI-PUE. and Model Compounds. Figures 1 and 2 show the transient absorption spectra of MDI-PUE (5.5 X lO-3 g/dL) and TDI-PU (2.3 X 10 3 g/dL) in THF at a 2.0 ns delay after pulsing with a krypton fluoride excimer laser (Xex=248 nm) in air and nitrogen saturated samples. Both spectra have common peaks in nitrogen saturated solutions (shown by arrows) at 310 nm, 330-360 nm (broad), and above 400 nm (broad, diffuse absorbance).. The MDI-PUE sample has an additional and quite distinctive peak at 370 nm. In the presence of air, the peak at 370 nm for MDI-PUE is completely extinguished, while the sharp peaks at 310 nm for TDI-PU and MDI-PUE and the broad band above 400 nm are only marginally quenched by oxygen. 

Irradiation with a krypton fluoride excimer laser can be employed for the preparation of highly unstable 1,2-dilluoroacetylene from 1.2-difluorodiiodoethene.167... 

One of the methods under development at AT T Bell Laboratories for submicron lithography is deep ultraviolet projection photolithography. (O Fine line definition is obtained by use of 248 nm light and a lens of large numerical aperture. Because of the large chromatic aberration of the quartz lens a spectrally line-narrowed krypton fluoride excimer laser is used as a light source. 

Finally, it is interesting to note that under exposure to krypton fluoride (KrF) excimer laser radiation supphed in several shots of 350 mJ/cm the S-layer is not ablated but car-... 

Finally, it is interesting to note that under exposure to krypton fluoride (KrF) excimer laser radiation supplied in several shots of 350 mJ/cm the S-layer is not ablated but carbonized, in the exposed areas [109,156]. This result is already used for high resolution patterning of polymeric resists (Figure 18). S-layers that have been formed on top of a spin-coated polymeric resist (on a silicon wafer) have been first patterned by ArF radiation and subsequently served as a mask for a blank exposure of the resist by irradiation with KrF-pulses. This two-step process was possible because S-layers are less sensitive to KrF radiation than polymeric resists. The thinness of the S-layer mask causes very steep side walls in the developed polymeric resist. 

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