Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Deep Lithography

In Proceedings of 21st SemiTherm Symposium, San Jose, 15-17 March 2005, pp 354—360 Mohr J, Ehrfeld W, Munchmeyer D (1988) Requirements on resist layers in deep-etch synchrotron radiation lithography. J Vac Sci Technol B6 2264-2267 Morini GL (2004) Single phase convective heat transfer in micro-channels overview of experimental results. Int J Thermal Sci 43 631-651... [Pg.96]

Fig. 2.9.5 (a) Typical computer generated percolation cluster that served as a template for the sample fabrication, (b) Photograph of a model object milled 1 mm deep into a polystyrene sheet. The total object size is 12 x 12 cm2, (c) Photographs of model objects etched 1 mm deep into PMMA sheets by X-ray lithography. The total object sizes are 15x15 mm2, 18x18 mm2 and 24 x 24 mm2 from right to... [Pg.216]

Dumon, P. Bogaerts, W. Wiaux, V. Wouters, J. Beckx, S. van Campenhout, J. Taillaert, D. Luyssaert, B. Bienstman, P. van Thourhout, D. Baets, R. Low loss SOI photonic wires and ring resonators fabricated with deep UV lithography, IEEE Photonic Technol. Lett. 2004, 16, 1328 1330... [Pg.264]

New Negative Deep-UV Resist for KrF Excimer Laser Lithography... [Pg.269]

A photosensitive composition, consisting of an aromatic azide compound (4,4 -diazidodi-phenyl methane) and a resin matrix (poly (styrene-co-maleic acid half ester)), has been developed and evaluated as a negative deep UV resist for high resolution KrF excimer laser lithography. Solubility of this resist in aqueous alkaline developer decreases upon exposure to KrF excimer laser irradiation. The alkaline developer removes the unexposed areas of this resist. [Pg.269]

Azide-phenolic resin photoresists have been reported by workers at Hitachi. They are used for i-line (12) or for deep UV light (13), and the applications to KrF excimer laser lithography have not been demonstrated. [Pg.270]

A negative deep UV resist, consisting of a photosensitive 4,4 -diazidodiphenyl methane and a poly-(styrene-co-maleic acid half ester) resin, has been found to meet the requirements needed for KrF excimer laser lithography. [Pg.279]

The object of this study is to develop new photoresists for deep-UV lithography, by using the reversible photoreaction of pyrimidine bases (17-19). Applicability of pyrimidine containing polymers to both negative and positive type photoresists is due to this photoreversible reaction in which cyclobutane dimers are either formed or cleaved depending on the exposure wavelength (Scheme 2). [Pg.304]

See other pages where Deep Lithography is mentioned: [Pg.349]    [Pg.31]    [Pg.2680]    [Pg.147]    [Pg.1614]    [Pg.349]    [Pg.31]    [Pg.2680]    [Pg.147]    [Pg.1614]    [Pg.114]    [Pg.380]    [Pg.188]    [Pg.215]    [Pg.58]    [Pg.1]    [Pg.3]    [Pg.5]    [Pg.5]    [Pg.20]    [Pg.22]    [Pg.22]    [Pg.57]    [Pg.58]    [Pg.58]    [Pg.115]    [Pg.175]    [Pg.176]    [Pg.179]    [Pg.179]    [Pg.185]    [Pg.187]    [Pg.269]    [Pg.332]    [Pg.333]    [Pg.350]    [Pg.354]   
See also in sourсe #XX -- [ Pg.281 ]



SEARCH



Deep X-ray lithography

Deep-UV lithography

Ultraviolet lithography, deep

© 2024 chempedia.info