Ultrathin oxide films oxides

H. -J. Freund, Metal-supported ultrathin oxide film systems as designable catalysts and catalyst supports, Surf. Sci., 2007, 601, 1438. 

A.K. Santra and D.W. Goodman, Size-dependent electronic, structural, and catalytic properties of metal clusters supported on ultrathin oxide films, in Catalysis and Electrocatalysis at Nanoparticle Surfaces, eds. A. Wieckowski, E.R. Savinova, and C.G. Vayenas. Marcel Dekker, New York, 2003, pp. 281-309. 

Shaikhutdinov, S, and Freund, H-J. Ultrathin oxide Films on metal supports structure-reactivity relations. Ann Rev Phys Chem. 2012 63 619-33. 

Freund H-J, Goodman DW. Ultrathin oxide films. In Ertl G, Knozinger H, Schiith F, Weitkamp J, editors. Handbook of Heterogeneous Catalysis. Weinheim Wiley-VCH Verlagsgesellschaft GmbH 2008. p. 1309-38. 

Sun YN, Giordano L, Goniakowski J, et al. The interplay between structure and CO oxidation catalysis on metal-supported ultrathin oxide films. Angew Chem Int Ed. 2010 49 4418-21. 

Freund H.-J, Goodman DW (2008). Ultrathin oxide films. In G. Ertl, H. Knozinger, E. Schiith J. Weitkamp (Eds.), Handbook of heterogeneous catalysis. Weinheim Wdey-VCH... 

Size-Dependent Electronic, Structural, and Catalytic Properties of Metal Clusters Supported on Ultrathin Oxide Films... 

The electronic structure, morphology, and chemical reactivity of metal nanoclusters have attracted considerable attention due to their extensive technological importance. Chemical reactions and their catalytic relevance have been investigated on a variety of well-characterized, supported model catalysts prepared by vapor deposition of catalytically relevant metals onto ultrathin oxide films in ultrahigh vacuum conditions. Such ultrathin film supports are usually prepared by vaporizing a parent metal onto a refractory metal substrate in an oxygen atmosphere at a high temperature. These unique model systems are particularly well suited for surface-... 

The most commonly used methods for the preparation of ultrathin oxide films are (1) direct oxidation of the parent metal surface, (2) preferential oxidation of one metal of choice from a suitable binary alloy, and (3) simultaneous deposition and oxidation of a metal on a refractory metal substrate. The detailed procedures for (1) and (2) are discussed elsewhere [7,56,57] procedure (3) is discussed here in detail. Preparation of a model thin-film oxide on a refractory metal substrate (such as Mo, Re, or Ta) is usually carried out by vapor-depositing the parent metal in an oxygen environment. These substrate refractory metals are typically cleaned by repeated cycles of Ar sputtering followed by high-temperature annealing and oxygen treatment. The choice of substrate is critical because film stoichiometry and crystallinity depend on lattice mismatch and other interfacial properties. Thin films of several oxides have been prepared in our laboratories and are discussed below. 

Kubota, A., and Economou, D. J., A molecular-dynamics simulation of ultrathin oxide films on silicon Growth by thermal O atoms and sputtering by 100 eV Ar ions. IEEE Trans. Plasma Sci. 27,1416-1425 (1999). 

Rainer, D.R. Goodman, D.W. Metal clusters on ultrathin oxide films Model catalysts for surface science studies. J. Mol. Catal., A Chem. 1998, 131, 259. 

An interesting example of the application of the slab model approach to the study of interfaces is the modeling of ultrathin oxide films on metallic substrate, which has been the subject of recently published papers by Pisani et It deals with a model of the epitaxially grown MgO (100) thin... 

Infrared spectroscopy of ultrathin oxide films on Si exploits the Berreman effect, arising when p-polarized radiation is incident at an inclined angle (Sections 3.1... 

Shaikhutdinov S, Freund HJ (2012) Ultrathin oxide films on metal supports structure-reactivity relations. Annu Rev Phys Chem 63 619-633... 

Wu M-C, Estrada C A, Corneille J S and Goodman D W 1996 Model surface studies of metal oxides adsorption of water and methanol on ultrathin MgO films on Mo(IOO) J. Chem. Phys. 96 3892... 

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Baldauf M, Kolb DM. 1996. Formic acid oxidation on ultrathin Pd films on Au(hkl) and Ft hkl) electrodes. J Phys Chem 100 11375-11381. 

Figure 6.2 (a) Top and (b) side view of the DFT- and STM-based model for the ultrathin aluminum oxide film on NiAI(l 1 0). 

All Fe oxide films on Pt have strongly relaxed, unreconstructed bulk-terminated surfaces, but while the Fe304 and Fe203 oxide layers are similar to their respective bulk compounds, the ultrathin FeO layers are true 2D oxide phases that are different from the FeO bulk and stabilized by the metal-oxide interface. 

Ichinose, I. and Kunitake T. (2002) Wrapping and inclusion of organic molecules with ultrathin, amorphous metal oxide films. Chemical Record, 2, 339-351. 

B. Munge, C. Estavillo, J.B. Schenkman, and J.F. Rusling, Optimization of electrochemical and peroxide-driven oxidation of styrene with ultrathin polyion films containing cytochrome P450cam and myoglobin. Chem. Biol. Biol. Chem. 4, 82-89 (2003). 

H.S. Kwok, X.W. Sun, and D.H. Kim, Pulsed laser deposited crystalline ultrathin indium tin oxide films and their conduction mechanisms, Thin Solid Films, 335 299-302, 1998. 

C. T. Campbell, Ultrathin metal films and particles on oxide surfaces Structural, electronic and chemisorptive properties, Surf. Sci. Rep. 27(1-3), 1-111 (1997). 

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