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Thermal introduction

In all these transformations, the azo-dicarboxylates compare very well to electron-poor double bonds in general, and that means there should also be good chances for the purely thermal introduction of nitrogen. This was clearly shown to be true for the ene reaction [209] and for Diels-Alder cycloadditions [210]. [Pg.325]

The only complete synthesis of cephalosporin C provides a classic example of the synthetic art of the late R. B. Woodward, and formed the subject of his Nobel Prize winning lecture of 1965. The synthesis, published in 1966, starts from L(+)-cysteine (189) 164, 165). Protection of the nitrogen, sulphur and acid functional groups provided the cyclic intermediate (191) ideally suited for the introduction of the amino function which was to become the nitrogen atom of the crucial -lactam intermediate (195). This was achieved in a completely stereocontrolled manner by a novel substitution method. Thermal introduction of the hydrazo-substituent to form (192) was followed by oxidation and conversion to the tran -hydroxy ester (193). Inversion by displacement of the mesylate with azide and subsequent reduction gave the cw-amino ester (194) which afforded the (i-lactam (195) on cyclisation. [Pg.41]

In agreement with the theory of polarized radicals, the presence of substituents on heteroaromatic free radicals can slightly affect their polarity. Both 4- and 5-substituted thiazol-2-yl radicals have been generated in aromatic solvents by thermal decomposition of the diazoamino derivative resulting from the reaction of isoamyl nitrite on the corresponding 2-aminothiazole (250,416-418). Introduction in 5-position of electron-withdrawing substituents slightly enhances the electrophilic character of thiazol-2-yl radicals (Table 1-57). [Pg.113]

To achieve sufficient vapor pressure for El and Cl, a nonvolatile liquid will have to be heated strongly, but this heating may lead to its thermal degradation. If thermal instability is a problem, then inlet/ionization systems need to be considered, since these do not require prevolatilization of the sample before mass spectrometric analysis. This problem has led to the development of inlet/ionization systems that can operate at atmospheric pressure and ambient temperatures. Successive developments have led to the introduction of techniques such as fast-atom bombardment (FAB), fast-ion bombardment (FIB), dynamic FAB, thermospray, plasmaspray, electrospray, and APCI. Only the last two techniques are in common use. Further aspects of liquids in their role as solvents for samples are considered below. [Pg.279]

Almost any kind of ion source could be used, but, again, in practice only a few types are used routinely and are often associated with the method used for sample introduction. Thus, a plasma torch is used most frequently for materials that can be vaporized (see Chapters 14-17 and 19). Chapter 7, Thermal Ionization, should be consulted for another popular method in accurate isotope ratio measurement. [Pg.366]

Thickness. The traditional definition of thermal conductivity as an intrinsic property of a material where conduction is the only mode of heat transmission is not appHcable to low density materials. Although radiation between parallel surfaces is independent of distance, the measurement of X where radiation is significant requires the introduction of an additional variable, thickness. The thickness effect is observed in materials of low density at ambient temperatures and in materials of higher density at elevated temperatures. It depends on the radiation permeance of the materials, which in turn is influenced by the absorption coefficient and the density. For a cellular plastic material having a density on the order of 10 kg/m, the difference between a 25 and 100 mm thick specimen ranges from 12—15%. This reduces to less than 4% for a density of 48 kg/m. References 23—27 discuss the issue of thickness in more detail. [Pg.334]

Disulfides. The introduction of disulfide bonds can have various effects on protein stability. In T4 lyso2yme, for example, the incorporation of some disulfides increases thermal stability others reduce stability (47—49). Stabili2ation is thought to result from reduction of the conformational entropy of the unfolded state, whereas in most cases the cause of destabili2ation is the introduction of dihedral angle stress. In natural proteins, placement of a disulfide bond at most positions within the polypeptide chain would result in unacceptable constraint of the a-carbon chain. [Pg.201]

The tetrahedral network can be considered the idealized stmcture of vitreous siUca. Disorder is present but the basic bonding scheme is still intact. An additional level of disorder occurs because the atomic arrangement can deviate from the hiUy bonded, stoichiometric form through the introduction of intrinsic (stmctural) defects and impurities. These perturbations in the stmcture have significant effects on many of the physical properties. A key concern is whether any of these defects breaks the Si—O bonds that hold the tetrahedral network together. Fracturing these links produces a less viscous stmcture which can respond more readily to thermal and mechanical changes. [Pg.498]

The thermal decomposition of silanes in the presence of hydrogen into siUcon for production of ultrapure, semiconductor-grade siUcon has become an important art, known as the Siemens process (13). A variety of process parameters, which usually include the introduction of hydrogen, have been studied. Silane can be used to deposit siUcon at temperatures below 1000°C (14). Dichlorosilane deposits siUcon at 1000—1150°C (15,16). Ttichlorosilane has been reported as a source for siUcon deposition at >1150° C (17). Tribromosilane is ordinarily a source for siUcon deposition at 600—800°C (18). Thin-film deposition of siUcon metal from silane and disilane takes place at temperatures as low as 640°C, but results in amorphous hydrogenated siUcon (19). [Pg.22]

Oxyhalide Glasses. Many glasses contain both oxide and haUde anions. The introduction of haUdes into an oxide glass typically serves to reduce the glass-transition temperature, T, and to increase the coefficient of thermal expansion. Oxyfluorophosphates have been investigated as laser host... [Pg.330]

Thermal Cracking. Thermal chlorination of ethylene yields the two isomers of tetrachloroethane, 1,1,1,2 and 1,1,2,2. Introduction of these tetrachloroethane derivatives into a tubular-type furnace at temperatures of 425—455°C gives good yields of trichloroethylene (33). In the cracking of the tetrachloroethane stream, introduction of ferric chloride into the 460°C vapor-phase reaction zone improves the yield of trichloroethylene product. [Pg.510]

Reversible HydrocoUoids (Agar). The agar-based impression materials are thermally reversible, aqueous gels (230,231), that become viscous fluids in boiling water and set to an elastic gel when cooled below 35°C. The popularity of agar-based impression materials has diminished with the introduction of elastic impression materials such as alginate-based, polysulfide, silicone, and polyether impression materials, but agar [9002-18-0] materials are still used in substantial quantities. [Pg.491]

Nonmechanical introduction of energy (Thermal shock, explosive shattering, electrohydraulic)... [Pg.1840]

The viscosity of liquid silicates such as drose containing barium oxide and silica show a rapid fall between pure silica and 20 mole per cent of metal oxide of nearly an order of magnitude at 2000 K, followed by a slower decrease as more metal oxide is added. The viscosity then decreases by a factor of two between 20 and 40 mole per cent. The activation energy for viscous flow decreases from 560 kJ in pure silica to 160-180kJmol as the network is broken up by metal oxide addition. The introduction of CaFa into a silicate melt reduces the viscosity markedly, typically by about a factor of drree. There is a rapid increase in the thermal expansivity coefficient as the network is dispersed, from practically zero in solid silica to around 40 cm moP in a typical soda-lime glass. [Pg.309]


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See also in sourсe #XX -- [ Pg.667 ]




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