TE polarization

For a microring resonator with a waveguide width of 5 pm and coupling gap of 200 nm, a resonance extinction ratio of 12 dB for TE polarization and 9 dB for TM polarization has been achieved, as shown in Fig. 2.10. The ring resonator had a race track shape with circular sections of 500 pm radius and straight coupling section of 100 pm in length. The width of the two exposed strips is about 50 pm. 

Fig. 2.10 Normalized transmission spectrum of a microring resonator made by e beam bleaching. The input light is TE polarized. Reprinted from Ref. 15 with permission. 2008 Institute of Electrical and Electronics Engineers...

Fig. 8.24 (a) Schematic of a curved slot waveguide (b) E field distribution of a straight polysty rene slot waveguide is shown with total waveguide width of 2.6 pm including a slot of 200 nm wide (TE polarization). The inset curve is the field magnitude at Y 3 pm, which indicates stronger E field within the slot... 

Fig. 8.25 E field distribution (TE polarization) of (a) a conventional polystyrene microring with waveguide width of 2.4 pm and height of 2 pm, and (b) an asymmetric slot polystyrene microring with entire waveguide width of 2.4 pm including a slot of 200 nm. Waveguides in both cases sit on silicon dioxide and are embedded in water...

Calculations for TE polarized light give similar results42, but the maximum induced 8/Vell in the PWEF waveguide is about three times smaller than for the TM mode. This difference is largely due to the absence of the surface field enhancement factor of (9.5), since the electric field of the TE mode is parallel to the waveguide surface and hence there is no electric field discontinuity. 

To attain a transverse field profile that is confined within the defect, the profile must exponentially increase for p < pdef, and exponentially decrease for p > pdef. This requirement determines which index-interfaces (lowhigh or highlow) should be positioned at zeros of the field and which at the extrema of the field. The constraints on the index profile are similar to the Cartesian case and differ for the TE and TM polarizations. For the TE polarization, the interfaces for decreasing (increasing) field should be at the zeros (extrema) of If, if nip ) > n(p 1) at the interface and at the extrema (zeros) of Hz if nip ) < nip 1) at the interface. For the TM polarization, the interfaces for decreasing (increasing) field should be at the extrema (zeros) of E, if n(p ) > n(p+) at the interface and at the zeros (extrema) of E, if n(p ) < nip 1) at the interface. The interfaces of the defect must be located at zeros of II, for TE and of E, for TM. 

Fig. 12.3 Refractive index (a) and TE polarized modal field profiles of a CBNL designed for m 7, Les 0.852 pm, with 5 internal and 10 external Bragg layers, (b) A nonperiodic distribution of high and low index material is required in an annular Bragg resonator...

Contrary to the linear/nonlinear junetion, the transmittanee of a nonlinear step-like discontinuity (structure B, Fig.l) is less than unity for low-intensity light beams. Under the assumption of a unidireetional propagation, the transmittanee can be evaluated by matching the transverse eomponents of eleetrieal field of TE polarization at the plane of junetion ... 

H.W. Schurmarm, V.S. Serov and Yu.V. Shestopalov, TE-polarized waves guided by a lossless nonlinear three-layer stmctms ,Phys.Rev.E 58, 1040 - 1050 (1998). 

In this study we suppose nonlinear organic material shows optical Kerr effect as n = n0+n2lEl2 and n2 = X<3)/(2n0). Moreover for simplification, we suppose the waveguides allow single mode propagations and TE polarization. After appropriate handling we get the following nonlinear coupled mode equations [ 12] ... 

The sensitivity of the sensor is usually defined by the change in Nm per change in tic, i.e., dNm/dtic. An expression for this for, say, TE polarized fight can be derived by using perturbational analysis of the mode equation (Eq.2) [16] ... 

Figure 4.7 Explanation of the notations The light beam propagates to the right. The LiNbOs z-axis is vertical to the main surface of the crystal. This is a z-cut . If the E- vector of the light beam lies parallel to the surface, this is called TE polarization. If the /(. -vector is oriented normal to the surface plane, this is a TM polarization...

X = 633 nm. These curves are for the TE polarization (electric vector in the plane of the slab). For the TM polarization (electric vector perpendicular to the plane of the slab) the shapes of the curves are essentially the same, but they are shifted toward greater thickness by about 0.05 pm. 

For the TE polarization, the tangential component of the polarization vectors is given by ... 

Fig. 10 Electric field profile in TE polarization across the multilayer electro-active waveguide structure. Adapted from [4] with permission from the America Chemical Society, copyright 1997...

Fig. 14 (a) The absorbance response, measured at 514.5 nm in TM polarization, of a film of cyt c (about 8 pmol/cm ) adsorbed to au EA-IOW measured during a potential scan from +400 to —400 mV. (b) An optically detected cyclic voltammogram solid line) reconstructed from the data in (a). The TE-polarized, optically detected cyclic voltammogram is also shown dotted line) [36]... 

We consider the cylindrical nanowire geometry shown in Fig. 17.1, with an incident plane wave normal to the cylinder axis and with an amplitude Eg. This is the simplest case to solve analytically and the one most often treated in experimental spectroscopic investigations of single nanowires. Possible orientations of linearly polarized incident light with respect to the wire axis are bounded by two cases. The first is the transverse magnetic (TM) polarization where the electric field is polarized parallel to the wire axis, and the second is the transverse electric (TE) polarization where the electric field is polarized perpendicularly to the wire axis. In TM polarization, the condition of continuity of the tangential electric field is expected to maximize the internal field, while in TE polarization, the dielectric mismatch should suppress the internal field. The incident plane wave may be expanded in cylindrical functions as ... 

Figure 4.12 shows 633-nm ATR modes in PI-1 before and after TE-polarized 532-nm (30 mW/cm ) irradiation. The mode shifts after irradiation showed that birefringence is achieved in PI-1 at room temperature. The ATR accurate measurement of the refractive index components and (in-plane)... 

Figure 4. Calculated TE polarized modal gain Figure 5. Calculated TE polarized modal gain Gmod versus carrier concentration Nso (cm ) for Gmod versus total current density J,ot for the the dilute-N " W" and "M" laser structures at RT. dilute-N "W" and "M" laser structures at RT.

For the formation of microcavities, it is necessary that a complete two-dimensional PBG exists at least for one polarization (TE or TM) and ideally for both polarizations. This involves careful design and requires that there be a sufficient index difference between the two materials. The photonic band structure of a triangular lattice of air holes in a membrane of SiCF coated with a thin layer of organic semiconductor has been described in Ref 24. Such a structure has been shown to possess a complete bandgap for TE polarized light. In a photonic lattice which possesses a complete bangap, it is possible to create a microcavity... 

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