Magnetron sputtering system

BN films were deposited on silicon (100) wafer with resistivity (5-8Q cm) by a magnetron sputtering system. Sputtering target used here was a hot-pressed h-BN with 4N purity. The substrate was applied with a negative bias at 180V and 300V, respectively. Deposition was carried out with a base pressure of 2x 1 O Pa and mixed... 

Nb/PdNi structures have been grown on Si(100) substrates in a UHV dc magnetron sputtering system with a base pressure of 10"9 mbar and sputtering Ar... 

In most efforts, the films produced were either amorphous, or their nitrogen content was less than the target of 57%. D. Li et al. [184] using a magnetron sputtering system produced crystalline carbon nitride/titanium nitride composite coatings with a reported hardness of 55 GPa. 

Figure 7.5 Schematic representation of a DC/RF magnetron sputtering system with off-axis and on-axis sample-holder positions.

Figure 2.15 Schematic diagram illustrating an RF magnetron sputtering system combined with a DC power supply for applying a bias voltage to the substrate.

D.M. Mattox, R.E. Cuthrell, C.R. Peeples, PL. Dreike, Design and performance of a moveable-post Cathode Magnetron Sputtering System for making PBFAII accelerator ion sources, Surf. Coat. Technol. 33 (1987) 425. 

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