Zinc telluride

ZnTe is usually applied in switching devices and in solar cells. It is one of the II—VI compound semiconductors with a direct band gap of 2.3 eV at room temperature. The electrodeposition of ZnTe was investigated by Sun et al. in the Lewis basic ZnCl2/l-ethyl-3-methylimidazolium ionic liquid containing propylene carbonate as a cosolvent at 40 °C [37]. 8-Quinolinol was added to the solution to shift the reduction of Te(IV) to more negative potential, thus facilitating the codeposition. The composition of the ZnTe deposits is dependent on the deposition potential and 

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Commonly used II-VI compounds include zinc sulfide, zinc selenide, zinc telluride, cadmium sulfide, cadmium telluride, and mercury cadmium telluride. These materials are not as widely used as the III-V compounds, one reason being that it is difficult to achieve p-type doping. Mercury cadmium telluride is used extensively in military night sights, which detect in the 8-13 im spectral band (a similar material, platinum silicide, is being developed for that purpose). The major applications ofCVD II-VI compounds are found in photovoltaic and electroluminescent displays. 

Zinc sulfide, ZnS, sphalerite (zinc blende) zinc sulfide, ZnS, wurtzite zinc selenide, ZnSe zinc telluride, ZnTe, cubic zinc telluride, ZnTe, hexagonal zinc polonide, ZnPo zinc aluminum selenide, ZnAl2Se4 zinc indium selenide, ZnIn2Se4 zinc indium telluride, Znhi2Te4. 

Zinc telluride and zinc selenide polymetallic species with phosphine ligands have been structurally characterized 301 further details are discussed in Section 6.8.7. The use of mono- and bidentate phosphine ligands of varying steric bulk contributes to the variation of structural types in the formation of zinc tellurolate polyzinc species with Zn10, Zn14, and Zn16 species structurally characterized by Fenske et al.30... 

Although numbering even fewer than the structurally characterized selenium zinc complexes there are examples of zinc tellurides and tellurates with typical coordination numbers of three or four and species from monomeric up to polymeric. 

TMEDA can also participate in the formation of multinuclear zinc telluride complexes with Znio, Zni4, and Zni6 complexes structurally characterized. A comparison was carried out by Pfistner et al. replacing the diamine with a diphosphorus ligand, bis(diphenylphosphino)methane,... 

Zinc telluride, ZnTe, was deposited on quartz, silicon, InAs, and GaSb substrates using Zn[TeSi(SiMe3)3]2 at temperatures between 250 °C and 350 °C. On InAs (orientation not specified) a cubic ZnTe layer was obtained. Problems of stoichiometry are encountered at temperatures below 325 °C because decomposition of the precursor is incomplete, while at higher temperatures (above 350 °C) the deposited ZnTe decomposes into Zn (which evaporates) and involatile elemental tellurium which remains. The results with the analogous cadmium precursor (1.4 torr, 290 °C) indicate that the CdTe films may be of better stoichiometry than those of ZnTe, with XRD results indicating that on a Si substrate the hexagonal phase is predominantly... 

Mitzi, D. B. 2005. Polymorphic one-dimensional (N2H4)2ZnTe Soluble precursors for the formation of hexagonal or cubic zinc telluride. Inorg. Chem. 44 ... 

Reaction with tellurium powder in alkaline solution yields red crystalline zinc telluride, ZnTe. 

Zinc telluride was obtained by deposition on the nickel electrode from 40 to 60 mol % ZnCl2-EMIC melt containing Te(IV) and PC [181]. The composition of the Zn-Te deposits was dependent on the deposition potential andTe(IV) concentration in the plating solution. 

The electrochemical formation of zinc selenide from acidic solutions [485] and electrodeposition of zinc telluride thin films, its properties, and photoelectro-chemical applications were presented and discussed by Mahalingam et al. [486, 487]. 

ZnTe (c). Fabre3 measured the heat of the reaction of zinc telluride with water and bromine, and his data yield, for ZnTe (c), Qf=33. 

Grooves 5 are formed in a substrate 1 of either cadmium telluride, cadmium zinc telluride, gallium arsenic, silicon or sapphire. A layer 4 of Hgi.yCd,Te is formed at the bottom and at the sides of the grooves. Next, the whole structure is covered by a p-type Hgi.xCd,Te layer (y < x), in which n-type regions 3 are formed. 

Lan, C. W. (2005), Flow and segregation control by accelerated rotation for vertical Bridgman growth of cadmium zinc telluride ACRT versus vibration, J. Crystal Growth, 274 (3-4), 379-386. 

Zinc selenide (yellow) and telluride (brown) have similar stractures to those of the sulfide, both existing in both wurtzite and zinc blende modifications. The selenide is used with zinc sulfide as a phosphor. It has the interesting property that it can act as a bine-green solid state laser bine-green laser action in solids is rare (most solid-state lasers function towards the red end, 635 nm or more, of the spectrum). At room temperature, laser action with the selenide at a wavelength of 525 nm (green) is observed and at -196°C at 495 nm (bine). Unfortunately the laser is relatively short-lived. Zinc telluride is a wide band gap semicondnctor whose electron transport properties in the form of thin films of stoichiometric and nonstoichiometric forms have been mnch studied. Its applications in optoelectronics, for example, as an optical recording material, have been reviewed. ... 

DEM/MAL] Demidenko, A. F., Mal tsev, A. K., Heat capacity of zinc telluride in the range 56-300°K. Entropy and enthalpy of ZnTe, CdS, CdSe, CdTe, Inorg. Mater., 5, (1969), 130-132. Cited on pages 267, 268. 

Lin MC, Chen PY, Sun IW (2001) Electrodeposition of zinc telluride from a zinc chloride-l-ethyl-3-methylimidazolium chloride molten salt. J Electrochem Soc 148 C653-C659... 

YCI3 YTTRIUM TRICHLORIDE 1818 ZnTe ZINC TELLURIDE 1849... 

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