Optoelectronic components

The application and product development activities showed that process conditions and mould/gate design were important factors in matching the targeted CTE. Table 7.13 illustrates the effects of process conditions on the CTE of the moulded part. 

Material CTE (ppmrc) Substrate costs Overall assembly costs 

LCP variant Cycle time Mould temp Average CTE (ppmrC) 

Test No.o/ couplers tested % Yield No. failed Failure modes 

Temp cycling 50 94 3 High attenuation Compression break 

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Optoelectronic components produced by CVD include semiconductor lasers, light-emitting diodes (LED), photodetectors, photovoltaic cells, imaging tubes, laser diodes, optical waveguides, Impact diodes, Gunn diodes, mixer diodes, varactors, photocathodes, and HEMT (high electron mobility transistor). Major applications are listed in Table 15.1.El... 

A typical set-up for measurement of residual oxygen in a closed vessel, such as food packs is shown in Figure l5, 24. The system consists of a benchtop phase-fluorometric detector (Luxcel Biosciences) built on the basis of low-cost optoelectronic components, which operates with a flexible fibre-... 

As the materials mature, it is expected that practical fabrication problems will be solved, and that eventually various grades of E-0 polymers will be available, like photoresist is today, for a variety of different applications and needs. For this reason, polymers represent a unique, potentially powerful addition to the library of materials comprising optoelectronic components, and polymer devices provide new and novel approaches to optical interconnection, electronic packaging, and integrated optics. 

Optoelectronic components for remote control and monitoring and for data transmission are being installed in hazardous areas more and more. In particular, the optical-fibre transmission technique enables numerous modem applications. Apart from the great advantages of this technology, the risk of an ignition caused by optical radiation at a power level sufficiently high is to be taken into account (see Section 1.2.7). 

The communications revolution also relies on a diverse set of CVD technologies. Some components are similar to those used in silicon microelectronics, but many are unique, involving complex epitaxial heterostructures of SiGe or compound semiconductor (e.g., AlGaAs) alloys that are required to yield high frequency (1-100 GHz) device operation. The communication revolution also relies on optoelectronic components, such as solid state diode lasers (another complex heterostructure device), and these devices are often grown by CVD. - Even the fiberoptic cables that transmit the optical component of the communications network are manufactured using a CVD technique to achieve the desired refractive index profile. ... 

Stryer L 1986 Cyclic GMP cascade of vision Anna. Rev. Neurosci. 9 87-119 Cafiso D S and Hubbell W L 1980 Light-induced interfacial potentials in photoreceptor membrane Biophys. J. 30 243-63 Drain C M, Christensen B and Mauzerall D 1989 Photogating of ionic currents across a lipid bilayer Proc. Natl Acad. Sci. USA 86 6959-62 Vsevolodov N N, Druzhko A B and Djukova T V 1989 Actual possibilities of bacteriorhodopsin application Molecular Electronics Biosensors and Biocomputers ed F T Hong (New York Plenum) pp 381-4 Vsevolodov N N and Dyukova T V 1994 Retinal-protein complexes as optoelectronic components Trend. Biotechnol. 12 81-103 Vsevolodov N N, Djukova T V and Druzhko A B 1989 Some methods for irreversible write-once recording in Biochrom films Proc. Annu. Int. Conf IEEE Eng. Med. Biol. Soc. 11 1327... 

Photoluminescence spectra of Er ions in an opal-based matrix containing tellurite glass and in a reference glass sample deposited on a silica substrate are presented in Fig. 2. A considerable enhancement of emission in the opal-based matrix as compared to the reference sample is evident and indicative of the promising approach performed in this study for synthesis of efficient erbium based optoelectronic components. 

Optical power losses are very small, about 0.03 dB/km. This means that over 100 kilometres the optical power is halved this is an important requirement for telecommunications. Optical power loss is minimized near the wavelengths of 1300 nm and 1550 nm, where the minimum Rayleigh scattering or minimal infrared absorption is found. For sensing purposes, the losses in the fibre optics are irrelevant, but still 1550 nm is the preferred window, since the optoelectronic components are more readily available. 

The temperarnre dependent acceleration factor % for 2 failure mechanisms (e.g. for discrete semiconductor devices, IC s, optoelectronic components...) are stated in DIN EN 61709 or SN 29500 as foUows ... 

Vsevolodov, N.N. and Dyukova, T.V. (1994) Retinal-protein complexes optoelectronic components. Trends Biotechnol. 12, 81-88. 

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