Silicon tetraethyl

Waring, C. E. The Kinetics of the Thermal Decomposition of Gaseous Silicon Tetraethyl and Silicon Tetrapropyl. Trans. Faraday Soc. 36, 1142-1153 (1940). 

A similar condensation of ethyl bromide and silicon tetrachloride with sodium was used by Kipping and Lloyd in 1907 to prepare silicon tetraethyl. 

This liberation of energy by the reaction just shown was found by Schumb 4 and his coworkers also to be sufficient to cleave the silicon-silicon bond. The action of sodium on mixtures of ethyl bromide, chlorobenzene, or n-amyl chloride with hexachlorodisilane resulted only in tetrasubstituced monosilanes and no disilane derivatives. In the same way, the silicon-oxygen-silicon bond of hexachlorodisiloxane was split by sodium in the presence of ethyl bromide or chlorobenzene and yielded only silicon tetraethyl or tetraphenyl. 

Silicon diethyl diethyl ether, (C2H5)2Si(OC2H5)2, is obtained by allowing silicon tetraethyl ester, Si(OC2Hs)4, to interact with sodium and zinc ethyL The ether produced is a colourless, fuming liquid, B.pt. 155 8° C, density at 0° C, 0 8752. It is stable in air, insoluble in water, soluble in ether or alcohol, and unattacked by ammonia. 

Silicon Tetraethyl Ester Ortho-Silicic Acid Ethyl Ester... 

Pellistor sensors can be rapidly poisoned by exposure to contaminants such as silicones, tetraethyl-lead, phosphorus containing compounds and high concentrations of H2S, and they can be damaged by exposure to high concentrations of combustible gas. They can also simply lose sensitivity slowly over time, which is why it is so important to regularly test their response to known concentration calibration gas. 

A widely used glass is phosphosilicate (PSG), which is used extensively in semiconductor devices as a passivation and planarization coating for silicon wafers. It is deposited by CVD by the reaction of tetraethyl orthosilicate (TEOS) (C2H50)4Si, and trimethylphosphate PO(OCH3)3, in a molecular ratio corresponding to a concentration of 5 to 7% P. Deposition temperature is usually 700°C and pressure is 1 atm. 

Germylene insertion into germacyclobutanes to give 1,2-digermacyclopentanes has already been described (Scheme 88). However, the tetraethyl derivative (95) is better made via the mercury derivative (Scheme 162). Like its silicon counterpart, (95) is slowly oxidized at room temperature, and inserts sulfur, selenium and bromine in the Ge—Ge bond. While (95) is less stable than the 1,2-digermacyclohexane, dichlorocarbene inserts into the /3-C—H bond of both rings, and not the Ge—C bond (Scheme 163) (69JOM(16)227). 

In direct analogy to their work in the nickel-catalyzed double silylation of unsaturated substrates with 3,4-benzo-l,l,2,2-tetraethyl-l,2-disilacyclo-butene, Ishikawa and co-workers have studied the catalytic formation of arene-silicon bonds. The Ni(PEt3)4 catalyst activates the C-H bond of the arene to result in net Si-H and Si-Ar bond formation [Eq. (34)].96... 

Starting in the 1950s a process was developed that leads from small-molecule silicon alkoxides such as tetraethoxysilane (tetraethyl orthosilicate), to organosiloxane oligomers and low polymers, and eventually to silica via a low temperature synthesis route.14 24 A simplified outline of the basic chemistry is shown in reactions (l)-(4), where R is an ethyl or higher alkyl unit. Any or all of the Si-OR bonds can be... 

Hachemi, M., Puciova-Sebova, M., Toma, S. and Villemin, D. Dry reaction of diethyl cyanomethylphosphonate and tetraethyl methylenediphosphonate with benzaldehyde on solid bases, Phosphorus, Sulfur Silicon Relat. Elem, 1996, 113, 131-136. 

In the sol-gel synthetic method, the gel graduates from inert background material to product. The underlying chemistry remains the same. The silicon-dioxide network is often generated from tetraethyl orthosilicate (Si(OCH2CH3)4), commonly abbreviated TEOS. An alcoholic solution of TEOS undergoes hydrolysis and condensation when added to water to produce Si02( ) and ethanol ... 

Mesoporous phosphomolybdic acid has been hydrotheimally synthesized with the surfaetant template cetyltrimethylammonium bromide, phosphomolybdic acid and tetraethyl orthosilicate as the silicon source. The parent materials are extracted in a solvent to remove the oi anic structuredirecting agent. The materials have been characterized by chemical analysis. X-ray diffraction, TEM, Infrared spectra and nitrogen BET surface measurement. After extraction of the silica-modified salts with HCI/EtOH, the surface area of the mesoporous material is up to 140 m /g, and the pore diameter is 30 40 nm. 

In 1996, Naka et al. described the synthesis of silicon-carbon unsaturated compounds via a nickel-catalyzed reaction <1996OM1101>. 3,4-Benzo-l,l,2,2-tetraethyl-l,2-disilacyclobut-3-ene 106 with bis(trimethylsilyl)acety-lene 107 in presence of a catalytic amount of tetrakis(triethylphosphine)nickel(0) in a sealed glass tube at 150 °C for 24h gave 5,6-benzo-l,l,4,4-tetraethyl-2,3-bis(trimethylsilyl)-l,4-disilacyclohex-2,5-diene 108, 4,5-benzo-l,l,3,3-tetraethyl-2-[bis(trimethylsilyl)methylene]-l,3-disilacyclopent-4-ene 109, 5,5,6,6,1 l,12,12-octaethyl-5,6,ll,12-tet a-silanaphthacene 110, and l,l -bis(3,4-benzo-2,2,5,5-tetraethyl-2,5-disilacyclopent-3-enylidene) 110, in 10%, 21%, 41%, and 9% yields (Scheme 13). 

As previously mentioned in Section 4.20.9.6.1, Naka et al. described the synthesis of silicon-carbon unsaturated compounds via a nickel-catalyzed reaction <1996OM1101>. The reaction between 3,4-benzo-l,l,2,2-tetraethyl-l,2-disilacyclobut-3-ene 106 with bis(trimethylsilyl)acetylene 107 in presence of a catalytic amount of tetrakis(triethyl-phosphine)nickel(O) gave the four metallaheterocyles detailed in Scheme 13. 

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