Single-crystal silicon wafers

A composite film of SiC and diamond was produced from tetramethylsilane, hydrogen, and methane in a microwave plasma on single-crystal silicon wafers. Volume fraction of the components can be adjusted by varying the gas composition. 

Figure 47 shows the typical microscratch scars of a part of the samples under different normal forces. The difference can be found from the scar under 250 /rN. Only a shallow scratch scar is visible on the surface of Fe-N (5 nm)/Ti-N (2 nm) (Fig. 46), but the scars are deeper for other samples except the single crystal silicon wafer (Fig. 47). If the normal force was over 250 /rN, the diamond tip penetrated into and plowed the sample surface. Figure 48 shows the relationship between the lateral force and the thickness of the Fe-N layer under 1,250 /rN. It is found that the lateral force increases with the thickness of the Fe-N layer. For comparison, the lateral force of Fe-N, Ti-N, him and Si (111) wafer under...

The NCD coatings can be grown on various substrates including single-crystal silicon wafers, sintered SiC, W, WC, Si3N, etc. Initially, a bias of -150 V is applied to enhance diamond... 

Schoeman BJ, Erdem-Senatalar A, Hedlund J, and Sterte J. The growth of sub-micron films of TPA-silicalite-1 on single crystal silicon wafers from low-temperature clear solutions. Zeolites 1997 19(l) 21-28. 

Boron-doped diamond (BDD) thin films were synthesized at CSEM (Neuchatel, Switzerland) by the hot filament chemical vapor deposition technique (HF CVD) on p-type, low-resistivity (l-3mQcm), single-crystal, silicon wafers (Siltronix). The temperature of the filament was between 2440 and 2560 °C and that of the substrate was monitored at 830 °C. The reactive gas was a mixture of 1% methane in hydrogen, containing trimethylboron as a boron source (1-3 ppm, with respect to H2). The reaction chamber was supplied with the gas mixture at a flow rate of 51 min giving a growth rate of 0.24 pm h for the diamond layer. The obtained diamond film has a thickness of about 1 pm ( 10%) and a resistivity of 15mQcm ( 30%). This HF CVD process produces columnar, random textured, polycrystalline films [9]. 

Spln-on and Cure Procedure. The spln-on applications of SOG were carried out with a manual photoresist spinner (Headway, Carrolton, Texas) under a laminar flow hood. In order to minimize the splash back problem, spray of the substrate by the mist or droplets formed by the SOG solution thrown off against the spinner bowl wall, it was necessary to apply a downward exhaust through the bottom of the bowl. The films were spun on 3 in. or 4 in. diameter single-crystal silicon wafers using an acceleration of 20,000 rpm/sec and a spin-time of 20 sec. at the desired speed. For most of the characterizations, the SOG film was cured at 100 C for 15 min. followed by 400°C for 60 min. in ambient air. 

IR Spectra. The IR spectra of the SOG film were obtained with a Perkin Elmer Model 683 Infrared Spectrophotometer in transmission mode by passing radiation through the film coated on a single crystal silicon wafer. In order to enhance the spectral signal, three layers... 

Yu B, Zhou F, Mu ZG et al (2006) Tribological properties of ultra-thin ionic liquid films on single-crystal silicon wafers with functionalized surfaces. Tribol Int 39 879-887... 

Despite the high performance of CMOS, its manufacturing process requires very high-cost equipment, clean room facilities, and expensive high purity single-crystal silicon wafers. Those limitations have set up the barrier to further reduce the fabrication costs and hindered the use of CMOS technology in large area electronics such as displays. 

The films were deposited by centrifugation onto polished single-crystal silicon wafers pretreated in boiling peroxide-ammoniac and peroxide-saline solutions, washed in deionized water, and heat-treated in a tubular furnace with a quartz reactor at 950 C (for 5 min). The... 

Tribological properties of several SAMs have been stndied. Octadecyltrichlorosilane (OTS) was prepared on a single-crystal silicon wafer (112). Strnctnre and morphology characterizations were done using contact-angle goniometry, ellipsometry, Fourier transform infrared spectroscopy, and AFM. It was observed that the SAM of OTS on the silicon wafer was quite smooth and homogeneous. Due to the wear of... 

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