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Silicon single crystal, reflection

Figure 10. Oblique effect on profile and integrated intensity of reflection of silicon single crystal (40)... Figure 10. Oblique effect on profile and integrated intensity of reflection of silicon single crystal (40)...
A characteristic of the early neutron reflectivity studies of nonionic surfactant adsorption was some variability in the pattern of adsorption. This was investigated in more detail and more systematically by McDermott et al. [55], who compared the adsorption of Ci2E6 onto a range of different substrates, amorphous silica, crystalline quartz, and the oxide layer on a silicon single crystal. The adsorbed surfactant was found to form a bilayer with an overall thickness 49 4 A, with a structure similar to that determined in the previous studies (see Fig. 4). [Pg.100]

Koenig BW, Krueger S, Orts WJ, Majkrzal CF, Berk NF, Silverton JV, Gawrisch K. Neutron reflectivity and atomic force microscopy studies of a lipid bilayer in water absorbed to the surface of a silicon single crystal. Langmuir 1996 12 1343-1350. [Pg.2234]

Instrumentation. The necessary y-radiation is usually supplied by a synchrotron. Selection of the proper monochromatic radiation is done with germanium and/or silicon single crystals. The angle of incidence of the radiation on the electrode surface under investigation can be varied the reflected and scattered intensity are measured with suitable detectors. Further experimental details have been reported elsewhere [52, 53]. In the studies reported so far, underpotential deposited layers... [Pg.241]

Kim, J., Kim, G., and Cremer, P. S. 2001. Investigations of water structure at the solid/liquid interface in the presence of supported lipid bUayers by vibrational sum frequency spectroscopy. Langmuir 17 7255. Koenig, B. W., Krueger, S., Orts, W. J., Majkrzak, C. F, Berk, N. F., Silverton, J. V., and Gawrisch, K. 1996. Neutron reflectivity and atomic force microscopy studies of a lipid bilayer in water adsorbed to the surface of a silicon single crystal. Langmuir 12 1343. [Pg.153]

Two perfect silicon single crystals mounted on an optical bench are the central part of this instmment. The reflectivity of perfect crystals is described by the Darwin curve according to ... [Pg.335]

A quantum yield was determined for acid generation based on the total absorbance of the film and the reflectivity from single crystal silicon at 254 nm. Total film absorbance at 254 nm is 0.185 which corresponds to 35% absorption by the film. Reflectivity at 254 nm is 0.66 (17) and so an additional 15% of the incident light is absorbed after reflection. Total absorption was taken to be 50% of incident dose. It should be noted that the resin absorption without sulfonium salt is 0.155 and thus constitutes about 84% of the total film absorbance with sulfonium salt. [Pg.32]

It was shown that "odd" forbidden small-angle reflections in the X-ray pattern appeared even from a fresh fracture of a single crystal at room temperature [1-3]. Therefore, the surface layer of the electrolyte cannot be attributed to contamination of the SOE surface with impurities, primarily silicon (see, for example, [32]). Impurities and, also, segregation of SOE components, e.g., yttrium, on the electrolyte surface undoubtedly influence properties of the SOE surface layer. [Pg.304]


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See also in sourсe #XX -- [ Pg.53 ]




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Silicon crystallization

Silicon single crystal

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